P6SMB43AT3 [ONSEMI]

600 Watt Peak Power Zener Transient Voltage Suppressors; 600瓦峰值功率齐纳瞬态电压抑制器
P6SMB43AT3
元器件型号: P6SMB43AT3
生产厂家: ON SEMICONDUCTOR    ON SEMICONDUCTOR
描述和应用:

600 Watt Peak Power Zener Transient Voltage Suppressors
600瓦峰值功率齐纳瞬态电压抑制器

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型号参数:P6SMB43AT3参数
Brand NameON Semiconductor
是否无铅 含铅
是否Rohs认证 不符合
生命周期Obsolete
零件包装代码DO-214
包装说明R-PDSO-C2
针数2
制造商包装代码403A-03
Reach Compliance Codenot_compliant
ECCN代码EAR99
HTS代码8541.10.00.50
风险等级5.21
其他特性UL RECOGNIZED, HIGH RELIABILITY
最大击穿电压45.2 V
最小击穿电压40.9 V
击穿电压标称值43 V
最大钳位电压59.3 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
极性UNIDIRECTIONAL
最大功率耗散0.55 W
认证状态Not Qualified
最大重复峰值反向电压36.8 V
子类别Transient Suppressors
表面贴装YES
技术ZENER
端子面层Tin/Lead (Sn/Pb)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
P6SMB6.8AT3 Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic™ package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Specification Features:
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8−171 VOLTS
600 WATT PEAK POWER
Working Peak Reverse Voltage Range − 5.8 to 171 V
Standard Zener Breakdown Voltage Range − 6.8 to 200 V
Peak Power − 600 W @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb−Free Packages are Available
Cathode
Anode
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
AYWW
xx
G
G
A
Y
WW
xx
G
= Assembly Location
= Year
= Work Week
= Device Code (Refer to page 3)
= Pb−Free Package
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS:
Modified L−Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Please See the Table on the Following Page
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
P6SMBxxxAT3
P6SMBxxxAT3G
Package
SMB
SMB
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2007
1
February, 2007 − Rev. 8
Publication Order Number:
P6SMB6.8AT3/D
P6SMB6.8AT3 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
Value
600
3.0
40
25
0.55
4.4
226
100
−65 to +150
Unit
W
W
mW/°C
°C/W
W
mW/°C
°C/W
A
°C
R
qJL
P
D
R
qJA
I
FSM
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @
I
F
(Note 4) = 30 A) (Note 5)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
I
PP
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
F
I
Uni−Directional TVS
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle
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2
P6SMB6.8AT3 Series
ELECTRICAL CHARACTERISTICS
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
V
RWM
(Note 6)
V
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
145
154
171
I
R
@
V
RWM
mA
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Breakdown Voltage
V
BR
V
(Note 7)
Min
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
162
171
190
Nom
6.8
7.51
8.2
9.1
10
11.05
12
13.05
15.05
16
18
20
22
24
27.05
30
33.05
36
39.05
43.05
47.05
51.05
56
62
68
75.05
82
91
100
110.5
120
130.5
150.5
160
170
180
200
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
@ I
T
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 8)
V
C
V
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
234
246
274
I
PP
A
57
53
50
45
41
38
36
33
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
4.8
4.4
4.0
3.6
3.3
2.9
2.7
2.6
2.4
2.2
QV
BR
%/°C
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
C
typ
(Note 9)
pF
2380
2180
2015
1835
1690
1550
1435
1335
1175
1110
1000
910
835
775
700
635
585
540
500
460
425
395
365
335
305
280
260
235
215
200
185
170
150
140
135
130
115
Device
P6SMB6.8AT3, G
P6SMB7.5AT3, G
P6SMB8.2AT3, G
P6SMB9.1AT3, G
P6SMB10AT3, G
P6SMB11AT3, G
P6SMB12AT3, G
P6SMB13AT3, G
P6SMB15AT3, G
P6SMB16AT3, G
P6SMB18AT3, G
P6SMB20AT3, G
P6SMB22AT3,G
P6SMB24AT3, G
P6SMB27AT3, G
P6SMB30AT3, G
P6SMB33AT3, G
P6SMB36AT3, G
P6SMB39AT3, G
P6SMB43AT3, G
P6SMB47AT3, G
P6SMB51AT3, G
P6SMB56AT3, G
P6SMB62AT3, G
P6SMB68AT3, G
P6SMB75AT3, G
P6SMB82AT3, G
P6SMB91AT3, G
P6SMB100AT3, G
P6SMB110AT3, G
P6SMB120AT3, G
P6SMB130AT3, G
P6SMB150AT3, G
P6SMB160AT3, G
P6SMB170AT3, G
P6SMB180AT3, G
P6SMB200AT3, G
Device
Marking
6V8A
7V5A
8V2A
9V1A
10A
11A
12A
13A
15A
16A
18A
20A
22A
24A
27A
30A
33A
36A
39A
43A
47A
51A
56A
62A
68A
75A
82A
91A
100A
110A
120A
130A
150A
160A
170A
180A
200A
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25°C
* The “G” suffix indicates Pb−Free package available.
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3
P6SMB6.8AT3 Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
10
t
r
10
ms
100
VALUE (%)
PEAK VALUE − I
PP
I
HALF VALUE −
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
I
PP
.
PP, PEAK POWER (kW)
1
50
t
P
0.1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
0
0
1
2
t, TIME (ms)
3
4
5
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
°
C
A
140
10,000
P6SMB6.8AT3G
C, CAPACITANCE (pF)
1000
P6SMB18AT3G
P6SMB51AT3G
100
120
100
80
60
40
20
0
0
25
50
75
100
125
150
10
T
J
= 25°C
f = 1 MHz
1
1
10
P6SMB200AT3G
100
1000
T
A
, AMBIENT TEMPERATURE (°C)
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
TYPICAL PROTECTION CIRCUIT
Z
in
V
in
LOAD
V
L
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4
P6SMB6.8AT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
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5
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    P6SMB43AT3
    描述和应用

    600 Watt Peak Power Zener Transient Voltage Suppressors
    600瓦峰值功率齐纳瞬态电压抑制器

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