PCFA86062F [ONSEMI]
Power MOSFET, N-Channel, 100 V, 1.8 mΩ, Bare Die;
| 型号： | PCFA86062F |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, 100 V, 1.8 mΩ, Bare Die |
| 文件： | 总7页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel
100 V, 1.8 mW
PCFA86062F
Features
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• Typical R
• Typical Q
= 1.4 mꢀ at V = 10 V
GS
DS(on)
= 95 nC at V = 10 V
g(tot)
GS
• AEC−Q101 Qualified and PPAP Capable
• RoHS Compliant
DIMENSION (mm)
Die Size
6604 × 3683
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
6584 15 × 3663 15
(5971.4 × 1639.6) × 2
390 × 540
101.6 19.1
ORDERING INFORMATION
Gate and Source: AlSiCu
Drain: Ti−NiV−Ag (back side of die)
Passivation: Polyimide
Device
Package
PCFA86062F
Wafer
Sawn on Foil
Wafer Diameter: 8 inch
Wafer sawn on UV Tape
Bad dice identified in inking
Gross Die Counts: 1006
RECOMMENDED STORAGE CONDITIONS
Temperature
RH
22 to 28°C
The Chip is 100% Probed to Meet the Conditions and Limits
40 to 66%
Specified at T = 25°C.
J
Symbol
BV
Parameter
Condition
I = 250 ꢁ A, V = 0 V
D
Min
100
−
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
Source to Drain Diode Voltage
DSS
GS
I
V
DS
V
GS
V
GS
= 100 V, V = 0 V
−
5
ꢁ A
nA
V
DSS
GS
I
=
20 V, V = 0 V
−
−
100
4.0
1.8
1.25
GSS
DS
V
GS(th)
= V , I = 250 ꢁ A
2.0
−
−
DS
D
*R
I
I
= 5 A, V = 10 V
1.4
−
mꢀ
DS(on)
D
GS
V
SD
= 5 A, V = 0 V
−
V
SD
GS
*Accurate R
test at die level is not feasible as limited by the test contact precision attainable in a die form. The max R
specification
performance
DS(on)
DS(on)
DS(on)
is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R
depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2021 − Rev. 0
PCFA86062F/D
PCFA86062F
MOSFET MAXIMUM RATINGS in Reference to the FDBL86062−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
100
Unit
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
V
GS
20
V
I
D
(V = 10) (Note 1)
GS
A
ꢂ JC
T
C
T
C
= 25°C
315.7
223.2
= 100°C
E
Single Pulse Avalanche Energy (Note 2)
352
429
mJ
W
AS
P
Power Dissipation R
D
ꢂ
JC
Derate Above 25°C
2.86
W/°C
°C
T , T
Operating and Storage Temperature
−55 to +175
0.35
J
STG
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 3)
°C/W
°C/W
ꢂ
JC
R
43
ꢂ
JA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting T = 25°C, L = 0.1 mH, I = 84 A
J
AS
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
ꢂ
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
ꢂ
ꢂ
JC
JA
2
ELECTRICAL CHARACTERISTICS in Reference to the FDBL86062−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
I
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
I
= 250 ꢁ A, V = 0 V
100
−
−
−
−
−
−
5
V
DSS
D
GS
V
V
= 100 V,
= 0 V
T = 25°C
J
ꢁ A
mA
nA
DSS
DS
GS
T = 175°C (Note 4)
J
−
2
I
Gate to Source Leakage Current
V
=
20 V
−
100
GSS
GS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
V
I
= V , I = 250 ꢁ A
2.0
−
3.1
1.5
3.3
4.0
2.0
4.3
V
GS(th)
GS
DS
D
Drain to Source On−Resistance
= 80 A,
= 10 V
T = 25°C
J
mꢀ
ꢀ
DS(on)
D
V
GS
T = 175°C (Note 4)
−
m
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 50 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
6970
3950
29
−
−
−
−
−
−
−
−
pF
iss
DS
GS
C
Output Capacitance
pF
pF
ꢀ
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
0.4
95
g
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 to 10 V, V = 80 V, I = 80 A
nC
nC
nC
nC
g(ToT)
DD
D
Q
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
= 0 to 2 V, V = 80 V, I = 80 A
13
g(th)
DD
D
Q
= 75 V, I = 80 A
31
gs
D
Q
20
gd
SWITCHING CHARACTERISTICS
t
Turn−On Delay
Rise Time
V
DD
V
GS
= 50 V, I = 80 A,
−
−
−
−
31
25
36
9
−
−
−
−
ns
ns
ns
ns
d(on)
D
= 10 V, R
= 6 ꢀ
GEN
t
r
t
Turn−Off Delay
Fall Time
d(off)
t
f
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2
PCFA86062F
ELECTRICAL CHARACTERISTICS in Reference to the FDBL86062−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
DRAIN−SOURCE DIODE CHARACTERISTIC
V
Source to Drain Diode Voltage
I
I
= 80 A, V = 0 V
−
−
−
−
−
−
1.25
1.2
−
V
V
SD
SD
GS
= 40 A, V = 0 V
SD
GS
t
Reverse Recovery Time
I = 80 A, dI /dt = 100 A/ꢁ s,
F
V
115
172
ns
nC
rr
SD
= 80 V
DD
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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3
PCFA86062F
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
0
0
25
50
75
100
125
150 175
25
50
75
100
125
150 175
200
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 1. Normalized Power Dissipation vs.
Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
P
0.05
0.02
DM
0.01
t
1
0.1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P x Z
x R
+ T
ꢂ JA C
J
DM
ꢂ JA
0.01
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
VGS = 10 V
T
= 25°C
FOR TEMPERATURES
J
ABOVE 25°C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I
I =
25
150
SINGLE PULSE
100
10−5
10−4
10−3
10−2
10−1
11
0
t, RECTANGULAR PULSE DURATION (s)
Figure 4. Peak Current Capability
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4
PCFA86062F
TYPICAL CHARACTERISTICS (continued)
2000
1000
1000
If R = 0
tAV = (L)(I )/(1.3*RATED BV
− V
)
AS
DSS
DD
If R 00
tAV = (L/R)ln[(I *R)/(1.3*RATED BV
− V ) +1]
DD
AS
DSS
100
10
1
100
10
1
STARTING TJ = 25°C
OPERATION IN THIS
AREA MAY BE
100 ꢁs
LIMITED BY r
DS(on)
STARTING TJ = 150°C
1 ms
SINGLE PULSE
T
J
= MAX RATED
10 ms
100 ms
T
= 25°C
J
0.1
0.1
1
10
100
500
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (ms)
AV
NOTE: Refer to ON Semiconductor Application
Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
350
350
PULSE DURATION = 250 ꢁ s
VGS = 0 V
DUTY CYCLE = 0.5% MAX
300
250
100
VDD = 5 V
T
J
= 175°C
T
J
= 25°C
200
150
100
10
T
J
= −55°C
T
J
= 25°C
J
T
= 175°C
1
50
0
0.1
0.0
3
4
5
6
7
0.2
0.2
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
350
300
250
200
150
100
50
350
300
250
200
150
100
50
250 ꢁ s PULSE WIDTH
250 ꢁ s PULSE WIDTH
T = 175°C
J
T
J
= 25°C
VGS
15 V Top
10 V
8 V
VGS
15 V Top
10 V
8 V
7 V
7 V
6 V
6 V
5.5 V
5ꢀV
Bottom
5.5 V
5 V Bottom
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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5
PCFA86062F
TYPICAL CHARACTERISTICS (continued)
30
25
20
15
10
5
2.5
PULSE DURATION = 250 ꢁ s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250 ꢁ s
DUTY CYCLE = 0.5% MAX
ID = 80 A
2.0
1.5
1.0
0.5
T
= 175°C
ID = 80 A
VGS = 10 V
J
T
J
= 25°C
0
4
5
6
7
8
9
10
−80 −40
0
40
80
120
160 200
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE(°C)
J
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.3
1.1
0.9
0.7
0.5
0.3
1.10
VGS = V
DS
ID = 5 mA
I
D
= 250 ꢁ A
1.05
1.00
0.95
0.90
−80 −40
0
40
80
120
160 200
−80 −40
0
40
80
120
160 200
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
Ciss
I
D
= 80 A
VDD = 50 V
DD = 40 V
8
6
4
2
0
Coss
VDD = 60 V
1000
100
10
V
f = 1 MHz
GS = 0 V
V
Crss
0.1
1
10
100
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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countries.
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