PCFG50T65SQF [ONSEMI]
650V 50A FS4 IGBT Wafer Sales;
| 型号： | PCFG50T65SQF |
| 厂家： | 
ONSEMI |
| 描述： | 650V 50A FS4 IGBT Wafer Sales 双极性晶体管 |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
www.onsemi.com
IGBT Die
VRCE = 650 V
IC = Limited by Tj(max)
PCFG50T65SQF
Using novel field stop IGBT technology, onsemi’s new series of
field stop 4 generation IGBTs offer the optimum performance for
C
th
solar inverter and UPS applications where low conduction and
switching losses are essential.
G
Features
• Maximum Junction Temperature: T = 175°C
J
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
E
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.6 V (Typ.) @ I = 50 A
C
CE(sat)
• Tighten Parameter Distribution
Typical Applications
• Solar Inverters
• UPS Systems
MECHANICAL DATA
Parameter
Mils
mm
Die Size
153.94 × 153.94
118.9 × 108.58
14.05 × 17.68
2.48
3910 x 3910
3020 x 2758
357 x 449.2
63
Gate Pad Size
Emitter Pad Size
Die Thickness
Scribe Width
DIE Outline
80 mm
ORDERING INFORMATION
Top Metal
5 mm AlSiCu
1.05 mm Al/NiV/Ag
Silicon Nitride
200 mm
Back Metal
Device
Inking?
Shipping Method
Topside Passivation
Wafer Diameter
Max Possible Die Per Wafer
PCFG50T65SQF
No
Sawn Wafer on Tape
1743
Recommended Storage
Environment
In original container, in dry nitrogen, < 3
months at ambient temperature of 23°C
MAXIMUM RATINGS
Parameter
Symbol
Value
650
Unit
V
Collector to Emitter Voltage, T = 25°C
V
CES
V
GES
J
Gate to Emitter Voltage
20
(Note 1)
200
V
Collector Current
@T = 25°C
I
C
A
C
Pulsed Collector Current
I
A
CM
Operating Junction Temperature
Storage Temperature Range
T
−40 to +175
−17 to +25
°C
°C
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Depending on the thermal properties of assembly.
2. Not subject to production test − verified by design/characterization.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2022 − Rev. 1
PCFG50T65SQF/D
PCFG50T65SQF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
GE
= 0 V, I = 1 mA
BV
CES
650
V
C
Temperature Coefficient of Breakdown
Voltage
I
C
= 1 mA, reference to 25°C
DBV
/DT
J
0.6
V/°C
CES
Collector−Emitter Cutoff Current
Gate Leakage Current
V
V
= 0 V, V = V
I
DSS
250
400
mA
GE
CE
CES
= 0 V, V = V
I
nA
CE
GE
GES
GSS
ON CHARACTERISTICS
G−E Threshold Voltage
V
= V , I = 50 mA
V
2.6
4.5
1.6
6.4
2.1
V
V
V
GE
CE
C
GE(th)
Collector−Emitter Saturation Voltage
I
C
C
= 50 A, V = 15 V
V
CE(sat)
GE
I
= 50 A, V = 15 V, T = 175°C
1.92
GE
C
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 0 V, V = 30 V, f = 1 MHz
C
ies
3275
84
pF
GE
CE
CE
Output Capacitance
Coes
Reverse Transfer Capacitance
GATE CHARGE CHARACTERISTICS
Total Gate Charge
C
12
res
V
= 400 V, I = 50 A, V = 15 V
Q
99
17
23
nC
C
GE
g
ge
gc
Gate to Emitter Charge
Q
Q
Gate to Collector Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For ordering, technique and other information on onsemi automotive bare die products, please contact automotivebaredie@onsemi.com.
(all dimensions in mm)
Figure 1. Die Layout
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can
therefore not be specified for a bare die.
www.onsemi.com
2
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
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