PCGLA200T75NF8 [ONSEMI]
IGBT 裸片 750V 200A;
| 型号： | PCGLA200T75NF8 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 裸片 750V 200A 双极性晶体管 |
| 文件： | 总4页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
www.onsemi.com
V
= 750 V
Field Stop Trench IGBT Die
750 V, 200 A
CES
I
C
= Limited by T
j(max)
IGBT DIE
PCGLA200T75NF8
Features
• AEC−Q101 Rev. D Qualified for Enhanced Reliability
• Maximum Junction Temperature 175°C
• Advanced FS4 Trench Technology
• Positive Temperature Coefficient
• Easy Paralleling
DIE OUTLINE
• Short Circuit Rated
• Very Low Saturation Voltage: V
= 1.45 V(Typ.) @ I = 200 A
C
CE(SAT)
• Optimized for Motor Control Applications
Applications
• Automotive Traction Modules
• General Power Modules
MECHANICAL PARAMETERS
Parameter
Mils
394 x 394
See chip drawing
47 x 56
mm
10,000 x 10,000
See chip drawing
1,200 x 1,430
80
Die Size
ORDERING INFORMATION
Emitter Pad Size
Gate Pad Size
Device
PCGLA200T75NF8
Inking?
Shipping
Sawn Wafer on Tape
Scribe Lane Width
Die Thickness
3
Yes
3.4
86
Top Metal
5 mm AlSiCu
Back Metal
1.3 mm Al/NiV/Ag
Silicon Nitride plus Polyimide
200 mm
Topside Passivation
Wafer Diameter
Max Possible Die Per Wafer
226
Recommended Storage
Environment
In original container, in dry nitrogen,
< 3 months at an ambient temperature of 23°C
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2022 − Rev. 2
PCGLA200T75NF8/D
PCGLA200T75NF8
ABSOLUTE MAXIMUM RATINGS (T = 25°C Unless Otherwise Noted)
VJ
Parameter
Symbol
Ratings
750
Unit
V
Collector−Emitter Voltage
Gate−Emitter Voltage
V
CES
GES
V
20
V
DC Collector Current, limited by T max
I
(Note 1)
600
A
VJ
C
Pulsed Collector Current, V = 15 V, tp limited by T
(Note 2)
I
A
GE
VJ max
CM
Short Circuit Withstand Time, V = 15 V, V ≤ 400 V, T ≤ 175°C
t
sc
4
ms
°C
°C
GE
CE
VJ
Operating Junction Temperature
T
VJ
−40 to +175
−17 to +25
Storage Temperature Range
Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Depends on the thermal properties of assembly.
2. Not subject to production test – verified by design/characterization.
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
STATIC CHARACTERISTICS (Tested on wafers)
Collector−Emitter Breakdown Voltage
Collector−Emitter Saturation Voltage
Gate−Emitter Threshold Voltage
Collector Cut−off Current
BV
V
= 0 V, I = 1 mA
750
−
−
1.45
5.5
−
−
V
V
CES
GE
C
V
I
= 200 A, V = 15 V
1.75
6.7
40
CE(SAT)
C
GE
V
GE(th)
V
= V , I = 200 mA
4.3
−
V
GE
CE
C
I
V
= V
, V = 0 V
mA
nA
CES
GES
CE
GE
CES
GES
GE
Gate Leakage Current
I
V
= V
, V = 0 V
CE
−
−
400
ELECTRICAL CHARACTERISTICS (Not subjected to production test – verified by design/characterization)
Collector−Emitter Breakdown Voltage
BV
V
C
= 0 V,
T =−40°C
VJ
700
820
−
V
CES
GE
I
= 1 mA
Collector Cut−off Current
I
V
= V
GE
,
T
VJ
= 150°C
= 175°C
= 150°C
= 175°C
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
1.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mA
CES
CE
CES
V
= 0 V
T
VJ
T
VJ
T
VJ
Collector−Emitter Saturation Voltage
V
I
V
= 200A,
1.65
1.7
V
CE(SAT)
C
= 15 V
GE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Total Gate Charge
Gate−Emitter Charge
Gate−Collector Charge
Turn−On Delay Time
Rise Time
C
V
CE
= 25 V, V = 0 V, f = 1 MHz
19900
374
pF
pF
pF
W
IES
GE
C
C
OES
RES
64
R
f = 1 MHz
10
G
Q
V
CE
V
= 400 V, I = 200 A,
GE
718
nC
G(Total)
C
= −8 V to +15 V
Q
Q
385
GE
GC
152
t
V
G
= 400 V, I = 200 A,
257.0
202.0
247.5
163.0
273.5
214.5
280.5
247.5
nS
nS
d(on)
CE
C
R
= 2 W, V
=
15 / −8 V,
Inductive Load,
=25°C
GE
t
r
T
VJ
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
Turn−On Delay Time
Rise Time
t
t
V
G
= 400 V, I = 200 A,
d(on)
CE C
R
= 2 W, V
=
15 / −8 V,
Inductive Load,
= 150°C
GE
t
r
T
VJ
Turn−Off Delay Time
Fall Time
d(off)
t
f
www.onsemi.com
2
PCGLA200T75NF8
ELECTRICAL CHARACTERISTICS (T = 25°C Unless Otherwise Noted) (continued)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS (Not subjected to production test – verified by design/characterization)
Turn−On Delay Time
Rise Time
t
t
V
G
= 400 V, I = 200 A,
−
−
−
−
282.0
227.0
289.0
269.0
−
−
−
−
nS
d(on)
CE
C
=
R
= 2 W, V
15 / −8 V,
Inductive Load,
= 175°C
GE
t
r
T
VJ
Turn−Off Delay Time
Fall Time
d(off)
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching characteristics and thermal properties are depending strongly on module design and mounting technology.
For ordering, technique and other information on onsemi automotive bare die products, please contact
automotivebaredie@onsemi.com.
Die Layout
Figure 1. Die Layout
www.onsemi.com
3
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