PCP1208-TD-H [ONSEMI]
双极晶体管，低饱和压，NPN，0.7 A，200 V;
| 型号： | PCP1208-TD-H |
| 厂家： | 
ONSEMI |
| 描述： | 双极晶体管，低饱和压，NPN，0.7 A，200 V 晶体管 |
| 文件： | 总7页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1836B
PCP1208
Bipolar Transistor
200V, 0.7A Low V (sat) NPN Single PCP
CE
http://onsemi.com
Features
•
•
•
•
•
V
=200V, I =0.7A
CEO
High allowable power dissipation
Halogen free compliance
C
Low collector-to-emitter saturation voltage V (sat)=0.115V(typ.)@I =0.35A
High-speed switching t =70ns(typ.)@I =0.3A
CE
C
f
C
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
220
200
8
Unit
V
V
CBO
V
V
CEO
V
V
EBO
I
C
0.7
A
Collector Current (Pulse)
Base Current
I
2
A
CP
I
B
140
mA
W
W
When mounted on ceramic substrate (450mm2 0.8mm)
1.3
3.5
×
Collector Dissipation
P
C
Tc=25
C
°
Junction Temperature
Storage Temperature
Tj
150
C
C
°
°
Tstg
-55 to +150
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
Device
Package
Shipping
note
7008B-003
PCP
(SC-62, SOT-89,
TO-243)
Pb Free
and
Halogen Free
1,000
pcs./reel
PCP1208-TD-H
Top View
PCP1208-TD-H
4.5
1.6
1.5
Packing Type: TD
Marking
TD
1
2
3
0.4
0.5
0.4
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
3
2 : Collector
3 : Emitter
PCP
Bottom View
Semiconductor Components Industries, LLC, 2013
May, 2013
52213 TKIM TC-00002872/72512 TKIM/12611CB TKIM TC-00002563 No.1836-1/7
PCP1208
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector Cutoff Current
Emitter Cutoff Current
I
V
=100V, I =0A
1
1
A
A
μ
CBO
CB E
I
V
=4V, I =0A
μ
EBO
EB C
DC Current Gain
h
V
CE
=5V, I =100mA
200
560
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=10V, I =100mA
120
9
MHz
pF
mV
V
T
CE C
Cob
V
CB
=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
V
(sat)
(sat)
I
C
=0.35A, I =35mA
115
0.82
200
1.2
CE
B
V
I =0.35A, I =35mA
C B
BE
V
I
C
=10 A, I =0A
220
200
8
V
μ
(BR)CBO
E
V
I
C
=1mA, R
=
V
∞
(BR)CEO
BE
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
50
2
ns
on
Storage Time
See specified Test Circuit.
s
μ
stg
f
Fall Time
70
ns
Switching Time Test Circuit
I
B1
PW=50μs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
R
L
50Ω
+
820μF
V
CC
=100V
I =10I = --10I =0.3A
C
B1
B2
No.1836-2/7
PCP1208
I
-- V
CE
I
-- V
C
C CE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
10mA
2mA
0.1
0
0.02
0
I =0mA
I =0μA
B
B
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
Collector-to-Emitter Voltage, V
CE
-- V IT15952
Collector-to-Emitter Voltage, V
-- V IT15953
CE
I
C
-- V
h
-- I
C
BE
FE
1000
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
=5V
CE
V
=5V
7
5
CE
°C
Ta=75
3
2
C
25°
°C
--25
100
7
5
3
2
10
7
5
3
2
0.1
0
1.0
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
2
2
3
3
3
5
7
2
3
5
7
0
0.1
1.0
Collector Current, I -- A
Base-to-Emitter Voltage, V
-- V
IT15954
IT15955
C
BE
h
-- I
f
-- I
FE
C
T C
100
7
5
1000
V
=10V
Ta=25°C
CE
7
5
3
2
3
2
100
7
5
100
3
2
7
5
10
7
5
3
2
3
2
1.0
0.01
10
2
3
5
7
2
3
5
7
5
7
2
3
5
7
0.1
1.0
IT15956
0.01
0.1
1.0
Collector Current, I -- A
Collector Current, I -- A
IT15957
C
C
Cob -- V
CB
V
(sat) -- I
CE C
1.0
100
f=1MHz
I
/ I =10
B
C
7
5
7
5
3
2
3
2
10
0.1
7
5
7
5
3
2
3
2
0.01
0.01
1.0
0.1
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1.0
10
100
IT15958
0.1
1.0
IT15959
Collector-to-Base Voltage, V
CB
-- V
Collector Current, I -- A
C
No.1836-3/7
PCP1208
V
CE
(sat) -- I
C
V
BE
(sat) -- I
C
10
7
5
1.0
I
/ I =20
B
I
/ I =10
B
C
C
7
3
2
5
1.0
7
5
3
2
3
2
0.1
7
5
3
2
0.01
0.01
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
IT15961
0.1
1.0
IT15960
Collector Current, I -- A
C
Collector Current, I -- A
C
P
-- Ta
A S O
C
10
1.4
7
5
When mounted on ceramic substrate
1.3
1.2
(450mm2×0.8mm)
3
2
I
=2A
CP
I =0.7A
C
1.0
<10μs
1.0
0.8
0.6
0.4
7
5
3
2
0.1
7
5
3
2
0.01
7
5
0.2
0
Ta=25°C
3
2
Single pulse
When mounted on ceramic substrate (450mm2×0.8mm)
0.001
0.01
3
5 7
3
2
5 7
2
3
5 7
10
2
3
5 7
100
2
3
5 7
1000
0
25
50
75
100
125
150
175
IT15963
2
0.1
1.0
Ambient Temperature, Ta -- °C
Collector-to-Emitter Voltage, V
CE
-- V
IT16014
No.1836-4/7
PCP1208
Bag Packing Specification
PCP1208-TD-H
No.1836-5/7
PCP1208
Outline Drawing
Land Pattern Example
PCP1208-TD-H
Mass (g) Unit
Unit: mm
0.058
mm
* For reference
2.2
1.0
1.0
1.5
3.0
No.1836-6/7
PCP1208
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PS No.1836-7/7
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