PCRL75120SQF [ONSEMI]
Rectifier 1200V 75A bare die;
| 型号： | PCRL75120SQF |
| 厂家： | 
ONSEMI |
| 描述： | Rectifier 1200V 75A bare die 软恢复二极管 快速软恢复二极管 测试 |
| 文件： | 总2页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PCRL75120SQF
Product Preview
1200 V Rectifier Die
Low forward voltage rectifier die for free−wheeling applications.
Ideal for use as a reverse diode in IGBT applications.
Features
www.onsemi.com
• Low Vf
• Soft Fast Reverse Recovery Diode
V
RRM
= 1200 V
I = Limited by T
Typical Applications
F
j(max)
• Solar Inverters
• UPS Systems
DIODE DIE
MAXIMUM RATINGS
Parameter
Symbol
Value
1200
Unit
V
Peak Reverse Voltage, T = 25°C
V
RRM
J
Max Forward Conduction Current
Operating Junction Temperature
I
(Note 1)
−55 to +175
A
F
T
°C
J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DIE OUTLINE
1. Depending on thermal properties of assembly.
MECHANICAL DATA
Parameter
Symbol
6200 × 3300
121
Unit
2
Die Size
mm
Die Thickness
Wafer Size
mm
150
mm
2
Total Pad Size (Anode)
Top Pad metal
5552 × 2652
mm
3.9 mm AlSi
Back metal
2 mm AlTiNiAg
1.5 mm HR NIT
610
Passivation
Max possible chips per wafer
Reject Ink dot size
25 mils
Recommended storage environment:
In original container, in dry nitrogen, or
temperature of 18−28°C, 30−65% RH
Type: Sawn wafer on tape.
Storage time: <3 months
ORDERING INFORMATION
Device
Inking?
Yes
Shipping
PCRL75120SQF
Sawn Wafer on Tape
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
PCRL75120SQF/D
November, 2018 − Rev. P0
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