PF5102 [ONSEMI]
N沟道低频低噪声放大器;型号: | PF5102 |
厂家: | ONSEMI |
描述: | N沟道低频低噪声放大器 放大器 开关 晶体管 |
文件: | 总5页 (文件大小:242K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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December 2011
PF5102
N-Channel Switch
Features
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
• Sourced from process 51.
• See J111 for characteristics.
TO-92
1
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VDG
Parameter
Value
40
-40
Units
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
VGS
V
IGF
50
mA
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Total Device Dissipation
Derate above 25°C
Max.
625
5.0
Units
mW
mW/°C
PD
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
°C/W
°C/W
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)GSS
IGSS
Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0
-40
V
Gate Reverse Current
VGS = -15V, VDS = 0
GS = -15V, VDS = 0, TA = 125°C
-1.0
-0.2
nA
μA
V
VGS(off)
VGS(f)
Gate-Source Cutoff Voltage
Gate-Source Forward Voltage
VDS = 15V, ID = 1.0nA
IG = 1.0mA, VDS = 0
-0.7
4.0
-1.6
1.0
V
V
On Characteristics
IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0
Small Signal Characteristics
20
mA
gfs
Forward Transfer Conductance
VDS = 15V, VGS = 0, f = 1.0KHz
VDS = 15V, ID = 500μA, f = 1.0KHz
VDG = 15V, VGS = 0, f = 1.0MHz
VDG = 15V, VGS = 0, f = 1.0MHz
11,000
μmhous
μmhous
pF
goss
Ciss
Crss
Output Conductance
25
16
6
Input Capacitance
Reverse Transfer Capacitance
pF
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0%
© 2011 Fairchild Semiconductor Corporation
PF5102 Rev. B0
www.fairchildsemi.com
1
Physical Dimension
TO-92
Dimensions in Millimeters
www.fairchildsemi.com
© 2011 Fairchild Semiconductor Corporation
PF5102 Rev. B0
2
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Rev. I60
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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