PN2222A [ONSEMI]
General Purpose Transistors NPN Silicon; 通用晶体管NPN硅
| 型号： | PN2222A |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总6页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
2
Rating
Symbol
Value
Unit
BASE
Collector-Emitter Voltage
V
V
V
Vdc
CEO
CBO
EBO
1
PN2222
30
40
EMITTER
PN2222A
Collector-Base Voltage
Emitter-Base Voltage
Vdc
Vdc
PN2222
PN2222A
60
75
PN2222
PN2222A
5.0
6.0
TO−92
CASE 29
STYLE 1
Collector Current − Continuous
I
C
600
mAdc
Total Device Dissipation
P
D
1
1
@ T = 25°C
625
5.0
mW
mW/°C
A
2
2
3
3
Derate above 25°C
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
Total Device Dissipation
P
D
@ T = 25°C
1.5
12
W
mW/°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
PN
2222
PN2
222A
YWW G
G
Symbol
Max
Unit
YWW G
Thermal Resistance,
Junction-to-Ambient
R
200
°C/W
q
JA
G
Thermal Resistance,
Junction-to-Case
R
83.3
°C/W
q
JC
PN2222
PN2222A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 5
PN2222/D
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
PN2222
V
30
40
−
−
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
PN2222A
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
PN2222
PN2222A
V
V
60
75
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
PN2222
PN2222A
5.0
6.0
−
−
Vdc
E
C
Collector Cutoff Current
(V = 60 Vdc, V
I
nAdc
mAdc
CEX
= 3.0 Vdc)
EB(off)
PN2222A
−
10
CE
Collector Cutoff Current
(V = 50 Vdc, I = 0)
I
CBO
PN2222
PN2222A
PN2222
−
−
−
−
0.01
0.01
10
CB
E
(V = 60 Vdc, I = 0)
CB
E
(V = 50 Vdc, I = 0, T = 125°C)
CB
E
A
A
(V = 50 Vdc, I = 0, T = 125°C)
PN2222A
10
CB
E
Emitter Cutoff Current
I
nAdc
nAdc
EBO
(V = 3.0 Vdc, I = 0)
PN2222A
PN2222A
−
−
100
20
EB
C
Base Cutoff Current
I
BL
(V = 60 Vdc, V
= 3.0 Vdc)
CE
EB(off)
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 10 Vdc)
35
50
75
35
100
50
30
40
−
−
C
CE
(I = 1.0 mAdc, V = 10 Vdc)
C
CE
CE
CE
CE
CE
CE
(I = 10 mAdc, V = 10 Vdc)
−
C
(I = 10 mAdc, V = 10 Vdc, T = −55°C)
PN2222A only
−
300
−
−
−
C
A
(I = 150 mAdc, V = 10 Vdc) (Note 1)
C
(I = 150 mAdc, V = 1.0 Vdc) (Note 1)
C
(I = 500 mAdc, V = 10 Vdc) (Note 1)
PN2222
PN2222A
C
Collector−Emitter Saturation Voltage (Note 1)
(I = 150 mAdc, I = 15 mAdc)
V
Vdc
Vdc
CE(sat)
PN2222
PN2222A
PN2222
−
−
−
−
0.4
0.3
1.6
1.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
PN2222A
Base−Emitter Saturation Voltage (Note 1)
(I = 150 mAdc, I = 15 mAdc)
V
BE(sat)
PN2222
PN2222A
PN2222
−
0.6
−
1.3
1.2
2.6
2.0
C
B
(I = 500 mAdc, I = 50 mAdc)
C
B
PN2222A
−
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
f
T
MHz
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)
PN2222
PN2222A
250
300
−
−
C
CE
Output Capacitance
C
pF
pF
obo
(V = 10 Vdc, I = 0, f = 1.0 MHz)
−
8.0
CB
E
Input Capacitance
C
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
PN2222
PN2222A
−
−
30
25
EB
C
Input Impedance
h
kW
ie
re
fe
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
2.0
8.0
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
0.25
1.25
C
CE
−4
Voltage Feedback Ratio
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
h
h
X 10
PN2222A
PN2222A
−
−
8.0
4.0
C
CE
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
Small−Signal Current Gain
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
−
PN2222A
PN2222A
50
75
300
375
C
CE
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. f is defined as the frequency at which |h | extrapolates to unity.
T
fe
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2
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
Symbol
Min
Max
Unit
h
oe
mMhos
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)
PN2222A
PN2222A
5.0
25
35
200
C
CE
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)
C
CE
Collector Base Time Constant
rb′C
ps
c
(I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz)
PN2222A
PN2222A
−
−
150
4.0
E
CB
Noise Figure
NF
dB
(I = 100 mAdc, V = 10 Vdc, R = 1.0 kW, f = 1.0 kHz)
C
CE
S
SWITCHING CHARACTERISTICS (PN2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
t
−
−
−
−
10
25
ns
ns
ns
ns
(V = 30 Vdc, V
= −0.5 Vdc,
d
CC
BE(off)
I
C
= 150 mAdc, I = 15 mAdc) (Figure 1)
B1
t
r
t
225
60
(V = 30 Vdc, I = 150 mAdc,
s
CC
C
I
B1
= I = 15 mAdc) (Figure 2)
B2
t
f
ORDERING INFORMATION
†
Device
Package
Shipping
PN2222G
TO−92
5000 Units / Bulk
5000 Units / Bulk
(Pb−Free)
PN2222AG
TO−92
(Pb−Free)
PN2222ARLRA
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
PN2222ARLRAG
TO−92
(Pb−Free)
PN2222ARLRM
TO−92
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
PN2222ARLRMG
TO−92
(Pb−Free)
PN2222ARLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ꢀ30 V
200
+ꢀ30 V
200
1.0 to 100 ms,
1.0 to 100 ms,
+16 V
0
DUTY CYCLE ≈ 2.0%
+16 V
0
DUTY CYCLE ≈ 2.0%
1 k
< 20 ns
1N914
-14 V
1 kW
C * < 10 pF
S
-ꢀ2 V
C * < 10 pF
S
< 2 ns
-ꢀ4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
http://onsemi.com
3
PN2222, PN2222A
1000
700
500
T = 125°C
J
300
200
25°C
100
70
-55°C
50
30
20
V
V
= 1.0 V
= 10 V
CE
CE
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
500 700 1.0 k
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
1.0
0.8
T = 25°C
J
I
C
= 1.0 mA
0.6
0.4
0.2
0
10 mA
150 mA
500 mA
0.005
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
50
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
200
500
V
= 30 V
I /I = 10
C B
CC
I /I = 10
300
T = 25°C
J
C B
100
t′ = t - 1/8 t
f
s
s
I = I
B1 B2
200
70
50
t @ V = 30 V
CC
r
t @ V
T = 25°C
J
= 2.0 V
= 0
d
t @ V
EB(off)
EB(off)
100
70
d
30
20
t
f
50
30
20
10
7.0
5.0
10
3.0
2.0
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200 300 500
5.0 7.0 10
20 30
50 70 100
200 300 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Turn−Off Time
http://onsemi.com
4
PN2222, PN2222A
10
10
R
R
R
= OPTIMUM
S
S
S
f = 1.0 kHz
= 50 mA
= SOURCE
= RESISTANCE
I
= 1.0 mA, R = 150 W
S
C
8.0
8.0
6.0
4.0
2.0
0
500 mA, R = 200 W
S
I
C
100 mA, R = 2.0 kW
S
100 mA
500 mA
1.0 mA
50 mA, R = 4.0 kW
S
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
R , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
S
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
30
500
V
= 20 V
CE
T = 25°C
20
J
300
200
C
eb
10
7.0
5.0
100
C
cb
3.0
2.0
70
50
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
1.0
2.0 3.0
5.0 7.0 10
20
30
I , COLLECTOR CURRENT (mA)
50 70 100
REVERSE VOLTAGE (VOLTS)
C
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
1.0
+0.5
0
T = 25°C
J
R
for V
CE(sat)
0.8
q
VC
V
@ I /I = 10
C B
BE(sat)
-ꢀ0.5
-ꢀ1.0
1.0 V
0.6
0.4
0.2
0
V
BE(on)
@ V = 10 V
CE
-ꢀ1.5
R
for V
BE
-ꢀ2.0
-ꢀ2.5
q
VB
V
@ I /I = 10
C B
CE(sat)
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100 200 500 1.0 k
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200 500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
http://onsemi.com
5
PN2222, PN2222A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021
0.055
0.105
0.020
---
D
X X
G
J
H
V
K
L
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
MILLIMETERS
K
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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