PN2222TF [ONSEMI]

General Purpose Transistor;
PN2222TF
型号: PN2222TF
厂家: ONSEMI    ONSEMI
描述:

General Purpose Transistor

文件: 总4页 (文件大小:148K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
NPN Epitaxial Silicon  
Transistor  
General Purpose Transistor  
TO923  
CASE 135AR  
1
PN2222  
2
3
1. Emitter  
2. Base  
3. Collector  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
MARKING DIAGRAM  
Parameter  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current  
Symbol  
Value  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
60  
30  
V
APN  
2222  
YWW  
5
V
I
C
600  
mA  
mW  
°C  
°C  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
P
C
625  
T
J
150  
PN2222 = Specific Device Code  
T
STG  
55 to 150  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
September, 2022 Rev. 3  
PN2222T/D  
PN2222  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
CollectorBase Breakdown Voltage  
CollectorEmitter Breakdown Voltage  
EmitterBase Breakdown Voltage  
Collector CutOff Current  
Conditions  
= 10 mA, I = 0  
Min.  
60  
30  
5
Typ.  
Max.  
Unit  
V
V
V
V
I
I
CBO  
CEO  
EBO  
CBO  
C
E
= 10 mA, I = 0  
V
C
B
I
= 10 mA, I = 0  
V
E
C
I
V
= 50 V, I = 0  
0.01  
10  
mA  
nA  
CB  
EB  
CE  
CE  
E
I
Emitter CutOff Current  
V
V
V
= 3 V, I = 0  
C
EBO  
h
FE  
DC Current Gain  
= 10 V, I = 0.1 mA  
35  
C
= 10 V, I = 150 mA*  
100  
300  
1
C
V
V
CollectorEmitter Saturation Voltage*  
BaseEmitter Saturation Voltage*  
Current Gain Bandwidth Product  
Output Capacitance  
I
= 500 mA, I = 50 mA  
V
V
CE(sat)  
C
C
B
I
= 500 mA, I = 50 mA  
2
BE(sat)  
B
f
T
V
V
= 20 V, I = 20 mA, f = 100 MHz  
300  
MHz  
pF  
CE  
CB  
C
C
= 10 V, I = 0, f = 1 MHz  
8
ob  
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%  
ORDERING INFORMATION  
Part Number  
PN2222TA  
PN2222TF  
Top Mark  
PN2222  
PN2222  
Package  
Shipping  
TO923 (PbFree)  
TO923 (PbFree)  
2,000 Units/ FanFold  
2,000 Units/ Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specification Brochure, BRD8011/D.  
www.onsemi.com  
2
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO92 3 4.83x4.76 LEADFORMED  
CASE 135AR  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13879G  
TO92 3 4.83X4.76 LEADFORMED  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
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the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
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