QED234 [ONSEMI]
GaAs 红外发光二极管;
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QED234
Plastic Infrared Light Emitting Diode
Features
• = 940 nm
• Chip Material =GaAs with AlGaAs Window
Description
The QED234 is a 940 nm GaAs / AlGaAs LED encapsu-
lated in a clear untinted, plastic T-1 3/4 package.
• Package Type: T-1 3/4 (5 mm lens diameter)
• Matched Photosensor: QSD123/124
• Medium Emission Angle, 40°
• High Output Power
• Package Material and Color: Clear, Untinted, Plastic
• Ideal for Remote Control Applications
Package Dimensions(1, 2)
0.195 (4.95)
REFERENCE
0.305 (7.75)
SURFACE
0.040 (1.02)
NOM
0.800 (20.3)
MIN
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
ANODE
0.240 (6.10)
0.215 (5.45)
CATHODE
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
© 2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
QED234/D
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
Parameter
Value
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
Unit
C
Operating Temperature
Storage Temperature
C
Soldering Temperature (Iron)(4, 5, 6)
Soldering Temperature (Flow)(4, 5)
Continuous Forward Current
Reverse Voltage
C
C
mA
V
VR
5
PD
Power Dissipation(3)
200
mW
A
IFP
Peak Forward Current
1.5
Notes:
3. Derate power dissipation linearly 2.67 mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron 1/16" (1.6mm) minimum from housing.
7. Pulse conditions; tp = 100 s, T = 10 ms
Electrical / Optical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Peak Emission Wavelength
Spectral Bandwidth
Temp. Coefficient of PE
Emission Angle
Conditions
IF = 20 mA
Min.
Typ.
Max.
Unit
nm
PE
-
940
IF = 20 mA
50
nm
TC
VF
TCv
IR
IF = 100 mA
0.2
40
nm/K
IF = 100 mA
Forward Voltage
IF = 100 mA, tp = 20 ms
IF = 100 mA
1.6
10
V
Temp. Coefficient of VF
Reverse Current
-1.5
mV/K
A
VR = 5 V
IE
Radiant Intensity
IF = 100 mA, tp = 20 ms
IF = 20 mA
27
mW/sr
%/K
ns
TCI
tr
Temp. Coefficient of IE
Rise Time
-0.6
1000
1000
IF = 100 mA
tf
Fall Time
ns
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2
Typical Performance Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= 50mA
I =100mA
F
F
Normalized to:
I
= 100 mA
1
0.1
F
T
= 25˚C
A
t
pw
= 100 μs
I
=10mA
I =20mA
F
F
0.01
I
t
Pulsed
F
= 100 μs
pw
Duty Cycle = 0.1%
-40
-20
0
20
40
60
80
100
1
10
100
1000 1500
T
- AMBIENT TEMPERATURE (˚ C)
A
I
F
- FORWARD CURRENT (mA)
Figure 1. Normalized Radiant Intensity vs. Forward
Current
Figure 2. Forward Voltage vs. Ambient Temperature
1.0
0.8
0.6
0.4
0.2
0
90
100
80
110
70
120
60
130
50
140
150
160
170
40
30
20
10
800
850
900
950
1000
1050
180
1.0
0
1.0
0.0
0.2
0.4
0.6
0.8
0.8
0.6
0.4
0.2
(nm)
Figure 3. Normalized Radiant Intensity vs. Wavelength
Figure 4. Radiant Diagram
1000
T
= 25˚C
A
100
10
1
1
2
3
4
V
- FORWARD VOLTAGE (V)
F
Figure 5. Forward Current vs. Forward Voltage
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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