QEE123 [ONSEMI]
AlGaAs 红外发光二极管;
| 型号： | QEE123 |
| 厂家： | 
ONSEMI |
| 描述： | AlGaAs 红外发光二极管 光电 二极管 |
| 文件： | 总7页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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May 2015
QEE122 / QEE123
Plastic Infrared Light Emitting Diode
Features
Description
• λ = 880 nm
• Package Type = Sidelooker
The QEE12X is a 880 nm AlGaAs LED encapsulated in a
medium wide angle, plastic sidelooker package.
• Chip Material = AlGaAs
• Matched Photosensor: QSE113
• Medium Wide Emission Angle, 50°
• Package Material: Clear Epoxy
• High Output Power
• Orange dot marking on the top side
Package Dimensions(1, 2)
0.175 (4.44)
0.087 (2.22)
Ø0.065 (1.65)
0.050 (1.27)
0.200 (5.08)
Ø0.095 (2.41)
0.500 (12.70)
MIN
CATHODE
ANODE
Schematic
0.020 (0.51) SQ.
(2X)
ANODE
0.100 (2.54)
CATHODE
0.030 (0.76)
0.100 (2.54)
NOM
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
© 2004 Fairchild Semiconductor Corporation
www.fairchildsemi.com
QEE122 / QEE123 Rev. 3.2
1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
Parameter
Value
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
Unit
°C
Operating Temperature
Storage Temperature
°C
Soldering Temperature (Iron)(4, 5, 6)
Soldering Temperature (Flow)(4, 5)
Continuous Forward Current
Reverse Voltage
°C
°C
mA
V
VR
5
PD
Power Dissipation(3)
100
mW
Notes:
3. Derate power dissipation linearly 2.67 mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or isopropyl alcohols are recommended as cleaning agents.
6. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
λPE
Parameter
Peak Emission Wavelength
Temperature Coefficient
Emission Angle
Conditions
IF = 20 mA
Min.
Typ.
890
0.2
Max.
Unit
nm
TCλ
2Θ1/2
nm/°C
°
IF = 100 mA
50
VF
Forward Voltage
IF = 100 mA, tp = 20 ms
1.7
V
TCVF
lR
Temperature Coefficient
Reverse Current
-6
mV/°C
μA
VR = 5 V
10
16
Radiant Intensity QEE122
Radiant Intensity QEE123
Temperature Coefficient
Rise Time
4
8
9
IE
IF = 100 mA, tp = 20 ms
mW/sr
9
TCIE
tr
-0.3
900
800
11
%/°C
ns
IF = 100 mA
VR = 0 V
tf
Fall Time
ns
Cj
Junction Capacitance
pF
© 2004 Fairchild Semiconductor Corporation
QEE122 / QEE123 Rev. 3.2
www.fairchildsemi.com
2
Typical Performance Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
910
908
906
904
902
900
898
896
894
I
= 20mA DC
F
700
750
800
850
900
(nm)
950
1,000
1,050
80
TA – AMBIENT TEMPERTURE (°C)
90
100
0
10
20
30
40
50
60
70
λ
Figure 1. Normalized Intensity vs. Wavelength
Figure 2. Peak Wavelength vs. Ambient Temperature
10
1.3
Normalized to:
Normalized to:
I
t
= 20mA Pulsed
= 20mS
F
PW
I
t
= 100mA Pulsed
F
1.2
1.1
1.0
0.9
0.8
0.7
0.6
= 20mS
PW
Duty Cycle = 4%
= 25°C
Duty Cycle = 4%
= 25°C
T
A
T
A
1
0.1
10
105
-15
0
15
30
45
60
75
90
100
1000
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
Figure 3. Normalized Radiant Intensity vs.
Forward Current
Figure 4. Normalized Radiant intensity vs.
Ambient Temperature
5.0
4.0
3.0
2.0
1.0
0.0
2.1
2.0
1.9
1.8
1.7
1.6
1.5
I
t
= 20mA Pulsed
F
I
t
Pulsed
F
= 20mS
PW
= 20mS
PW
Duty Cycle = 4%
Duty Cycle = 4%
= 25°C
T
A
105
-15
0
15
30
45
60
75
90
10
100
1000
TA – AMBIENT TEMPERTURE (°C)
IF – FORWARD CURRENT (mA)
Figure 5. Forward Voltage vs. Forward Current
Figure 6. Forward Voltage vs. Ambient Temperature
© 2004 Fairchild Semiconductor Corporation
QEE122 / QEE123 Rev. 3.2
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
1.0
0.8
0.6
0.4
0.2
0.0
Normalized to:
d = 0 inch
90°
100°
80°
110°
70°
I
t
Pulsed
120°
F
60°
= 100μs
pw
130°
50°
Duty Cycle = 0.1 %
V
= 5V
CC
140°
150°
160°
170°
40°
R
= 100 Ω
= 25˚C
L
T
A
30°
20°
10°
I
= 100mA
F
180°
1.0
0°
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
I
F
= 20mA
0
1
2
3
4
5
6
LENS TIP SEPARATION (inches)
Figure 7. Radiation Diagram
Figure 8. Coupling Characteristics
of QEE122 and QSE113
© 2004 Fairchild Semiconductor Corporation
QEE122 / QEE123 Rev. 3.2
www.fairchildsemi.com
4
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Full Production
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Rev. I74
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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