QSE257_技术文档

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technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

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is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

August 2012

tm

QSE256, QSE257, QSE258, QSE259

Plastic Silicon OPTOLOGIC^®Photosensor

Features

Description

■ Bipolar silicon IC

The QSE25x family are OPTOLOGIC® ICs which

feature a Schmitt trigger at output which provides hyster-

esis for noise immunity and pulse shaping. The basic

building block of this IC consists of a photodiode, a linear

amplifier, voltage regulator, Schmitt trigger and four out-

put options. The TTL/LSTTL compatible output can drive

up to ten TTL loads over supply currents from 4.5 to 16.0

Volts. The devices are marked with a color stripe for

easy identification.

■ Package type: Sidelooker

■ Medium wide reception angle, 50°

■ Package material and color: black epoxy

■ Daylight filter

■ High sensitivity

■ Direct TTL/LSTTL interface

Package Dimensions

2.15

2.35

1.39

1.65

5° TYP ON ALL SIDES

ø

1.14

1.40

4.35

5.85

0.67

0.77

12.7

MIN

Part Number Deﬁnitions

Totem-Pole, buffer output

Color Code

Red

QSE256

QSE257

QSE258

QSE259

Totem-Pole, inverter output

Open-collector, buffer output

Open-collector, inverter output

Yellow

Green

1.17

1.37

Blue

2.34

2.74

Input/Output Table

0.52

0.76

Part Number

Light

On

Output

HIGH

LOW

Vcc

GND

Vout

QSE256

QSE257

QSE258

QSE259

Off

On

LOW

Off

HIGH

LOW

On

1.45

1.71

4.38

4.62

0.25

0.51

Off

On

LOW

Note:

Off

HIGH

1. Dimensions for all drawings are in millimeters.

www.fairchildsemi.com

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

Block Diagrams

VOLTAGE

REGULATOR

VOLTAGE

REGULATOR

V

CC

LA

OUT

GND

QSE256

Totem-Pole Output Buffer

QSE257

Totem-Pole Output Inverter

V

CC

VOLTAGE

REGULATOR

VOLTAGE

REGULATOR

OUT

LA

GND

QSE259

Open-Collector Output Inverter

QSE258

Open-Collector Output Buffer

Absolute Maximum Ratings ^{(T = 25°C unless otherwise speciﬁed)}

A

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol

Parameter

Rating

-40 to +85

-40 to +100

240 for 5 sec

260 for 10 sec

50

Unit

°C

T

Operating Temperature

Storage Temperature

OPR

T

°C

STG

(2,3,4)

T

Soldering Temperature (Iron)

Soldering Temperature (Flow)

Output Current

°C

SOL-I

(2,3)

T

°C

SOL-F

I

mA

V

O

V

Supply Voltage

4.0 to 16

35

CC

V

Output Voltage

V

O

(1)

P

Power Dissipation

100

mW

D

Notes:

1. Derate power dissipation linearly 2.50mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron tip 1/16" (1.6mm) minimum from housing.

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

www.fairchildsemi.com

2

Electrical Characteristics ^{(T = -40°C to +85°C, V}= 4.5V to 5.5V)

A

CC

Symbol

Parameter

Test Conditions

Min.

Typ. Max.

Units

2

Ee(+)

Positive Going Threshold

T = 25°C

0.025

0.250 mW/cm

A

(5)

Irradiance

Ee(+)/Ee(-) Hysteresis Ratio

1.10

2.00

(5)

2

I

Supply Current

Ee = 0 or 0.3mW/cm

f = DC to 50MHz

5.0

mA

V

CC

Peak to Peak Ripple which

will Cause False Triggering

2.00

QSE256 (Buffer Totem Pole)

(5)

2

V

High Level Output Voltage

Low Level Output Voltage

Ee = 0.3mW/cm , I = -10mA

2.4

V

OH

V

Ee = 0, I = 16mA

0.40

OL

QSE257 (Inverter Totem Pole)

High Level Output Voltage

V

Ee = 0, I = -10mA

V

OH

(5)

2

V

Low Level Output Voltage

QSE258 (Buffer Open Collector)

High Level Output Current

Low Level Output Voltage

QSE259 (Inverter Open Collector)

High Level Output Current

Ee = 0.3mW/cm , I = 16mA

OL

(5)

2

I

Ee = 0.3mW/cm , V = 30V

100

µA

V

OH

V

Ee = 0, I = 16mA

0.40

OL

I

Ee = 0, V = 30V

100

µA

V

OH

(5)

2

V

Low Level Output Voltage

QSE256, QSE257

Ee = 0.3mW/cm , I = 16mA

0.40

OL

2

t , t

Output Rise, Fall Times

Propagation Delay

Ee = 0 or 0.3mW/cm ,

70

nS

µS

R

F

f = 10kHz, DC = 50%,

t

, t

6.0

PHL PLH

(5)

R = 360Ω

L

QSE258, QSE259

2

t , t

Output Rise, Fall Times

Propagation Delay

Ee = 0 or 0.3mW/cm ,

100

nS

µS

R

F

f = 10kHz, DC = 50%,

t

, t

PHL PLH

(5)

R = 360Ω

L

Note:

5. λ = 880nm (AlGaAs).

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

www.fairchildsemi.com

3

Typical Performance Curves ^{(Sensor Coupled to QEE113 Emitter)}

Fig. 2 Output Voltage vs. Input Current (Buffers)

Fig. 1 Output Voltage vs. Input Current (Inverters)

6

5

4

3

2

1

0

6

5

4

3

2

1

0

V

R

= 5 V

= 270Ω

= 25°C

CC

V

R

= 5 V

= 270Ω

= 25°C

CC

V

OH

L

T

A

T

A

d = 4mm

I

F (ON)

F (OFF)

F (ON)

F (OFF)

V

OL

V

OL

0

1

2

3

4

5

0

1

2

3

4

5

I_F- Input Current (mA)

Fig. 3 Threshold Current vs. Distance

Fig. 4 Normalized Threshold Current vs. Supply Voltage

10

8

1.6

Normalized to:

6

Turn ON Threshold

1.4

V

= 5 V

CC

4

T

= 25°C

A

1.2

1.0

0.8

0.6

0.4

0.2

0.0

2

I

F (ON)

Normalized to:

V

R

= 5 V

= 270Ω

= 25°C

CC

1.0

0.8

0.6

L

I

F (OFF)

T

A

d = 4mm

0.4

Pulsed 100Hz

PW = 100μs

0.2

0.1

0

2

4

6

8

10

12

14

0

2

4

6

8

10

12

14

16

d - Distance (mm)

V_CC- Supply Voltage (V)

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

www.fairchildsemi.com

4

Typical Performance Curves ^{(Sensor Coupled to QEE113 Emitter) (Continued)}

Fig. 5 Normalized Threshold Current

vs. Ambient Temperature

Fig. 6 Low Output Voltage vs. Output Current

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1

Normalized to:

V

= 5 V

CC

= 25°C

V

= 5 V

CC

T

A

T

A

= 25°C

I

= 10 mA

F

I

F (OFF)

I

F (ON)

I

F (ON)

0.1

F (OFF)

0.01

-40

-20

0

20

40

60

80

100

1

0

I_O- Output Current (mA)

T_A- Ambient Temperature (˚C)

Fig. 7 Response Time vs. Forward Current

5

V

R

= 5 V

CC

= 270Ω

L

T

= 25°C

Pulsed

A

4

3

2

1

0

I

F

T = 10 ms

Duty Cycle = 50%

T

PLH

T

PHL

0

5

10

15

20

I_F- Forward Current (mA)

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

www.fairchildsemi.com

5

Fig. 8 Switching Speed Test Circuit

C₂

5V

R₁

R₂

.1 uf

bypass

Pulse

Generator

= 5V

f = 10 KHz

d.c. = 50%

C₁

GND

V

O

R₁= 360Ω

R₂= 180Ω

C₁= 15 pf

C₂= 20 pf

C₁and C₂include probe and

stray wire capacitance

Fig. 9 Switching Times Definition for Buffers

Fig. 10 Switching Times Definition for Inverters

50%

0 mA

t_PLH

t_PHL

t_PLH

V_OH

10%

90%

10%

90%

10%

90%

Output

V_O

Output

V_O

50%

V_OL

t_r

t_f

t_r

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

www.fairchildsemi.com

6

www.fairchildsemi.com

QSE256, QSE257, QSE258, QSE259 Rev. 1.0.1

7

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	QSE257
厂家：	ONSEMI
描述：	塑料硅 OPTOLOGIC 光电传感器光电传感器
文件：	总9页 (文件大小：1257K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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