RB751S40P2T5G [ONSEMI]
200 mA, 30 V Schottky Barrier Diode;型号: | RB751S40P2T5G |
厂家: | ONSEMI |
描述: | 200 mA, 30 V Schottky Barrier Diode |
文件: | 总4页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Schottky Barrier Diodes
RB751S40
Features
• Low Forward Voltage Drop
• Fast Switching
• Very Small and Thin SMD Package
• Profile Height, 0.43 mm Max
• Footprint, 1.0 x 0.6 mm
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CONNECTION DIAGRAM
ABSOLUTE MAXIMUM RATINGS
1
2
Rating
Symbol
Value
30
Unit
V
CATHODE
ANODE
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
V
RRM
I
30
mA
mA
F(AV)
2
Forward Surge Current
(8.3 mS Single Half Sine−Wave)
I
200
FSM
1
Power Dissipation
P
227
mW
D
SOD−923
Operating Junction and Storage
Temperature Range
T
T
−55 to +150
°C
J, stg
CASE 514AB
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
ADM
1
2
AD = Specific Device Code
= Date Code
M
ORDERING INFORMATION
†
Device
RB751S40P2T5G
Package
Shipping
SOD−923
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2020 − Rev. 1
RB751S40/D
RB751S40
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Ambient (Note 1)
1. Minimum land pad.
R
550
°C/W
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Breakdown Voltage
Symbol
Test Conditions
Min
Max
Unit
V
R
I
= 10 mA
30
−
−
V
R
Forward Voltage
V
F
I = 1 mA
F
370
0.5
8.0
2.5
mV
mA
nS
pF
Reverse Leakage
I
R
V
= 30 V
−
R
Reverse Recovery Time
Junction Capacitance
t
rr
I = I = 10 mA, irr = 0.1 I
−
F
R
R
C
V
= 1 V, f = 1.0 MHz
−
j
R
TYPICAL PERFORMANCE CHARACTERISTICS
100
100000
10000
T
J
= 125°C
T
J
= 125°C
T
= 75°C
J
10
T
= 75°C
1000
100
10
J
T
J
= 25°C
T
= 25°C
J
1
0.2
1.0
30
0.4
0.6
0.8
10
20
V , REVERSE VOLTAGE (V)
R
V , FORWARD VOLTAGE DROP (V)
F
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
3.0
300
f = 1 mHz
2.8
250
200
150
100
50
2.5
2.3
2.0
1.8
1.5
1.3
1.0
0
0
25
50
75
100
125
150
0
2
4
6
8
10
V , REVERSE VOLTAGE (V)
R
T , AMBIENT TEMPERATURE (°C)
a
Figure 4. Power Derating
Figure 3. Junction Capacitance
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2
RB751S40
PACKAGE DIMENSIONS
SOD−923
CASE 514AB
ISSUE C
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
E
1
2
2X b
0.08 X
Y
TOP VIEW
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
MIN
A
b
c
0.34
0.15
0.07
0.75
0.55
0.95
0.37
0.20
0.12
0.80
0.60
1.00
0.19 REF
0.10
0.40
0.25
0.17
0.85
0.65
1.05
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
A
D
E
H
E
L
c
L2 0.05
0.15
0.002 0.004 0.006
H
E
SIDE VIEW
SOLDERING FOOTPRINT*
1.20
2X
L
2X
2X
0.25
0.36
PACKAGE
OUTLINE
2X
L2
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
See Application Note AND8455/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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