RD0106T(TP-FA) [ONSEMI]

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HALOGEN FREE, TP-FA, 3 PIN;
RD0106T(TP-FA)
型号: RD0106T(TP-FA)
厂家: ONSEMI    ONSEMI
描述:

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HALOGEN FREE, TP-FA, 3 PIN

二极管
文件: 总3页 (文件大小:212K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA1704  
SANYO Sem iconductors  
DATA S HEET  
Diffused Junction Silicon Diode  
RD0106T  
Low V High-Speed Switching Diode  
F
Features  
High breakdown voltage (V  
Fast reverse recovery time.  
=600V).  
RRM  
Low forward voltage (V max=1.3V).  
F
Low switching noise.  
Halogen free compliance.  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Repetitive Peak Reverse Voltage  
Average Output Current  
Surge Forward Current  
Junction Temperature  
Symbol  
Conditions  
Ratings  
Unit  
V
V
600  
1
RRM  
A
I
I
O
Sine wave 10ms  
10  
A
FSM  
Tj  
150  
°C  
°C  
Storage Temperature  
Tstg  
--55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
600  
max  
Reverse Voltage  
Forward Voltage  
Reverse Current  
V
I =1mA  
V
V
R
R
V
I =1A  
F
1.1  
1.3  
10  
50  
F
I
R
V =600V  
R
A
μ
t
t
1
2
I =1A, di / dt=100A/  
F
s
μ
40  
16  
6
ns  
ns  
rr  
Reverse Recovery Time  
Thermal Resistance  
I =0.5A, I =1A  
F
rr  
R
Rth(j-c)  
Junction -Case  
°C / W  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
http://semicon.sanyo.com/en/network  
No. A1704-1/3  
42110SC TK IM TC-00002327  
RD0106T  
Package Dimensions  
unit : mm (typ)  
Package Dimensions  
unit : mm (typ)  
7518-002  
7003-001  
2.3  
6.5  
5.0  
6.5  
5.0  
4
2.3  
0.5  
0.5  
4
0.85  
0.7  
0.5  
0.85  
1.2  
0.5  
1
2
3
0.6  
0.6  
0 to 0.2  
1.2  
1 : No Contact  
2 : Cathode  
3 : Anode  
1 : No Contact  
2 : Cathode  
3 : Anode  
1
2
3
4 : Cathode  
4 : Cathode  
2.3 2.3  
2.3 2.3  
SANYO : TP  
SANYO : TP-FA  
I
F
-- V  
I
-- V  
F
R R  
10  
1.0  
0.1  
100  
10  
125°C  
1.0  
0.1  
0.01  
0.01  
0.001  
0
0.001  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT15497  
100  
200  
300  
400  
500  
600  
IT15498  
Forward Voltage, V -- V  
Reverse Voltage, V -- V  
R
F
Cj -- V  
I
-- t  
R
FSM  
5
14  
12  
10  
8
f=100kHz  
3
2
10  
7
5
6
4
3
2
2
0
1.0  
0.1  
2
3
5
7
2
3
5
7
2
3
5 7  
7
2
3
5
7
2
3
5
7
1.0  
2
3
1.0  
10  
100  
IT15499  
0.01  
0.1  
Reverse Voltage, V -- V  
Time, t -- s  
IT15500  
R
No. A1704-2/3  
RD0106T  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of April, 2010. Specications and information herein are subject  
to change without notice.  
PS No. A1704-3/3  

相关型号:

RD0106T-H

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
SANYO

RD0106T-H

Planar Ultrafast Rectifier, Fast trr type, 1A, 600V, 50ns, TP/TP-FA
ONSEMI

RD0106T-TL-H

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
SANYO

RD0106T-TL-H

Planar Ultrafast Rectifier, Fast trr type, 1A, 600V, 50ns, TP/TP-FA
ONSEMI

RD0106T_12

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
SANYO

RD0114

Board Euro Connector, 28 Contact(s), 3 Row(s), Male, Straight, Solder Terminal, Plug
FOXCONN

RD01MUS1

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI

RD01MUS1-101

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
MITSUBISHI

RD01MUS1_10

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI

RD01MUS1_11

RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI

RD01MUS2

Silicon MOSFET Power Transistor 520MHz,1W
MITSUBISHI

RD01MUS2-101,T113

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
MITSUBISHI