RFP50N06 [ONSEMI]
N 沟道，功率 MOSFET，60V，50A，22mΩ;
| 型号： | RFP50N06 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，60V，50A，22mΩ 局域网 PC 开关 晶体管 |
| 文件： | 总9页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, N-Channel
60 V, 50 A, 22 mW
DRAIN
(FLANGE)
RFP50N06
G
D
S
These N−Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes approaching
those of LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed for use in
applications such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated directly
from integrated circuits.
TO−220−3LD
CASE 340AT
SYMBOL
D
Formerly developed type TA49018.
G
Features
• 50 A, 60 V
S
• r
= 0.022 W
DS(ON)
• Temperature Compensating PSPICEt Model
• Peak Current vs. Pulse Width Curve
• UIS Rating Curve
MARKING DIAGRAM
• 175°C Operating Temperature
• This Device is Pb−Free and is RoHS Compliant
$Y&Z&3&K
RFP
Specifications
50N06
ABSOLUTE MAXIMUM RATINGS
C
(T = 25°C, unless otherwise specifieded)
Symbol
Parameter
Rating
60
Unit
V
V
DSS
DGR
Drain to Source Voltage (Note 1)
V
Drain to Gate Voltage (R = 20 kW)
60
V
GS
(Note 1)
V
Gate to Source Voltage
20
50
V
A
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Lot
= Specific Device Code
GS
I
Drain Current
Continuous (Figure 2)
Pulsed
D
I
(Figure 5)
(Figure 6)
DM
RFP50N06
E
Pulsed Avalanche Rating
AS
P
D
Power Dissipation
131
W
Linear Derating Factor
0.877
W/°C
ORDERING INFORMATION
T , T
Operating and Storage Temperature
−55 to 175
°C
°C
J
STG
Device
Package
Shipping
T
L
Maximum Temperature for Soldering
Leads at 0.063 inch (1.6 mm) from Case
for 10 s
300
RFP50N06
TO−220−3LD
(Pb−Free)
800 units /
Tube
T
pkg
Maximum Temperature for Soldering
Package Body for 10 s, see Techbrief 334
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. T = 25°C to 150°C
J
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
August, 2022 − Rev. 2
RFP50N06/D
RFP50N06
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
60
2
Typ
−
Max
−
Units
V
I
= 250 mA, V = 0 V (Figure 11)
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
BV
D
GS
DSS
V
= V , ID = 250 mA (Figure 10)
V
−
4
V
GS
DS
GS(TH)
TC = 25°C
I
−
−
1
mA
mA
nA
W
DSS
V
V
= 60 V,
= 0 V
DS
GS
TC = 150°C
−
−
50
100
V
= 20 V
Gate to Source Leakage Current
Drain to Source On Resistance
I
−
−
GS
GSS
r
I
D
= 50 A, V = 10 V (Figure 9)
−
−
0.022
DS(ON)
GS
Turn−On Time
Turn−On Delay Time
Rise Time
t
−
−
−
−
−
−
−
95
−
ns
ns
ns
ns
ns
ns
ON
V
= 30 V, I = 50 A
D
DD
L
GS
R = 0.6 W, V = 10 V
GS
t
12
55
37
13
−
d(ON)
R
= 3.6 W
t
r
−
(Figure 13)
Turn−Off Delay Time
Fall Time
t
−
d(OFF)
t
f
−
Turn−Off Time
t
75
OFF
Total Gate Charge
Q
V
V
V
V
= 0 to 20 V
= 0 to 10 V
= 0 to 2 V
−
−
−
125
67
150
80
nC
nC
nC
g(TOT)
GS
GS
GS
DS
V
= 48 V, I = 50 A,
D
DD
L
R = 0.96 W
Gate Charge at 10V
Threshold Gate Charge
Q
g(10)
I
= 1.45 mA
g(REF)
Q
3.7
4.5
(Figure 13)
g(TH)
Input Capacitance
C
= 25 V, V = 0 V
−
−
−
2020
600
−
−
−
pF
pF
ISS
OSS
RSS
GS
f = 1 MHz
(Figure 12)
Output Capacitance
C
C
Reverse Transfer Capacitance
200
pF
°C/W
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
(Figure 3)
−
−
−
−
1.14
62
θ
JC
JA
°C/W
TO−220
θ
SOURCE TO DRAIN DIODE CHARACTERISTICS
Source to Drain Diode Voltage
Output Capacitance
V
I
I
= 50 A
−
−
−
−
1.5
V
SD
SD
t
= 50 A, dI /dt = 100 A/ms
125
ns
rr
SD
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RFP50N06
TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified)
1.2
1.0
0.8
0.6
0.4
0.2
0
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
o
o
T
, CASE TEMPERATURE ( C)
C
T
, CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power Dissipation
vs. Case Temperature
Figure 2. Maximum Continuous Drain
Current vs. Case Temperature
2
1
0.5
0.2
0.1
0.1
P
DM
0.05
t
1
0.02
0.01
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
x R
SINGLE PULSE
PEAK T = P
x Z
+ T
qJC
C
J
DM
qJC
0.01
1
−5
−4
10
−3
10
−2
−1
10
0
10
10
10
t , RECTANGULAR PULSE DURATION (s)
10
1
Figure 3. Normalized Maximum Transient Thermal Impedance
3
400
100
10
o
T
= MAX RATED
J
FOR TEMPERATURES ABOVE 25 C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
SINGLE PULSE
o
T
= 25 C
C
175 – T
C
V
= 20V
GS
I = I
100ms
25
150
1ms
V
= 10V
GS
10
1
o
T
= 25 C
C
OPERATION IN THIS
AREA MAY BE
2
10ms
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
LIMITED BY r
DS(ON)
100ms
DC
V
= 60V
DSS(MAX)
40
−3
10
−2
10
−1
10
0
1
2
3
4
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
10
10
10
10
10
t, PULSE WIDTH (ms)
V
DS
Figure 4. Forward Bias Safe
Operating Area
Figure 5. Peak Current Capability
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3
RFP50N06
TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified) (continued)
300
100
125
PULSE DURATION = 80ms
V
= 10V
DUTY CYCLE = 0.5% MAX
GS
o
T
= 25 C
C
V
= 8V
100
75
50
25
0
GS
o
STARTING T = 25 C
J
V
= 7V
GS
o
STARTING T = 150 C
10
J
V
= 6V
= 5V
= 4V
GS
If R = 0
V
GS
t
= (L) (I ) / (1.3 RATED BV
− V )
DD
AV
If R p 0
AS DSS
V
GS
t
= (L/R) ln [(I *R) / (1.3 RATED BV
− V ) + 1]
DD
AV
AS
DSS
1
1
0.01
0
1.5
3.0
4.5
6.0
7.5
0.1
10
t
TIME IN AVALANCHE (ms)
AV,
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Saturation Characteristics
2.5
2.0
1.5
1.0
0.5
0
125
PULSE DURATION = 80ms
PULSE DURATION = 80ms
o
o
−55 C
25 C
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 50A
V
= 15V
GS
D
DD
100
75
50
25
0
o
175 C
0
1
2
3
4
5
6
7
8
9
10
−80
−40
0
40
80
120
160
200
o
T , JUNCTION TEMPERATURE ( C)
V
, GATE TO SOURCE VOLTAGE (V)
J
GS
Figure 8. Transfer Characteristics
Figure 9. Normalized Drain to Source On
Resistance vs. Junction Temperature
2.0
1.5
1.0
0.5
0
2.0
1.5
1.0
I
= 250mA
V
GS
= V , I = 250mA
D
DS
D
0.5
0
−80
−40
0
40
80
120
o
160
200
−80
−40
0
40
80
120
160
200
o
T , JUNCTION TEMPERATURE ( C)
J
T , JUNCTION TEMPERATURE ( C)
J
Figure 10. Normalized Gate Threshold
Voltage vs. Junction Temperature
Figure 11. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
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4
RFP50N06
TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified) (continued)
10
7.5
5.0
2.5
0
60
4000
3000
2000
1000
0
V
= 0V, f = 1MHz
GS
ISS
C
C
C
= C
+ C
GS
GD
V
= BV
V
= BV
DSS
DD
DSS
DD
= C
RSS
OSS
GD
= C
+ C
45
30
15
DS
GD
C
C
ISS
0.75 BV
0.50 BV
0.25 BV
0.75 BV
DSS
DSS
DSS
0.50 BV
0.25 BV
DSS
DSS
OSS
DSS
= 1.2W
R
I
V
L
= 1.45mA
C
g(REF)
RSS
= 10V
GS
0
I
I
I
I
0
5
10
15
20
25
g(REF)
g(ACT)
g(REF)
g(ACT)
t, TIME (ms)
20
80
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 12. Capacitance vs. Drain to
Source Voltage
Figure 13. Normalized Switching Waveforms for
Constant Gate Current
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5
RFP50N06
TEST CIRCUITS AND WAVEFORMS
V
DS
BV
DSS
L
t
P
V
DS
VARY t TO OBTAIN
P
I
AS
+
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
−
V
GS
DUT
t
P
I
AS
0V
0
0.01W
t
AV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
t
t
ON
OFF
t
d(OFF)
t
d(ON)
V
DS
t
t
f
r
V
DS
90%
90%
R
L
V
GS
+
10%
10%
V
DD
0
−
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
V
GS
10%
0
Figure 16. Switching Time Test Circuit
Figure 17. Switching Waveforms
V
DS
V
DD
Q
R
g(TOT)
L
V
DS
V
= 20V
GS
V
GS
Q
+
g(10)
V
DD
V
= 10V
V
GS
−
GS
DUT
V
= 2V
GS
I
0
g(REF)
Q
g(TH)
I
g(REF)
0
Figure 18. Gate Charge Test Circuit
Figure 19. Gate Charge Waveforms
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6
RFP50N06
PSPICE ELECTRICAL MODEL
.SUBCKT RFP50N06213
REV 2/22/93
o
*NOM TEMP = 25
C
CA 12 8 3.68e−9
CB 15 14 3.625e−9
CIN 6 8 1.98e−9
DRAIN
2
5
DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD
10
LDRAIN
DPLCAP
RDRAIN
−
DBREAK
MOS2
6
ESG
8
16
+
VTO
−
DBODY
EBREAK 11 7 17 18 64.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
EVTO
GATE
1
21
−
+
9
20
6
18
8
11
MOS1
17
18
LGATE RGATE
EBREAK
−
RIN
CIN
RSOURCE
LSOURCE
7
8
IT 8 17 1
3
SOURCE
S1A
S2A
12
RBREAK
LDRAIN 2 5 1e−9
LGATE 1 9 5.65e−9
LSOURCE 3 7 4.13e−9
15
14
13
13
8
17
18
S1B
S2B
13
RVTO
19
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
CA
CB
+
IT
14
+
−
5
8
6
8
VBAT
EGS
EDS
+
−
−
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e−4
RGATE 9 20 0.690
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 12e−3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.678
.MODEL DBDMOD D (IS=9.85e−13 RS=4.91e−3 TRS1=2.07e−3 TRS2=2.51e−7 CJO=2.05e−9 TT=4.33e−8)
.MODEL DBKMOD D (RS=1.98e−1 TRS1=2.35E−4 TRS2=−3.83e−6)
.MODEL DPLCAPMOD D (CJO=1.42e−9 IS=1e−30 N=10)
.MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e−30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.23e−3 TC2=−2.34e−7)
.MODEL RDSMOD RES (TC1=5.01e−3 TC2=1.49e−5)
.MODEL RVTOMOD RES (TC1=−5.03e−3 TC2=−5.16e−6)
.MODEL S1AMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−6.75 VOFF=−2.5)
.MODEL S1BMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−2.5 VOFF=−6.75)
.MODEL S2AMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=−2.7 VOFF=2.3)
.MODEL S2BMOD VSWITCH (RON=1e−5 ROFF=0.1 VON=2.3 VOFF=−2.7)
.ENDS
NOTE: For further discussion of the PSPICE model consult
A New PSPICE Sub−Circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.
PSPICE is a trademark of MicroSim Corporation.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
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