概述
规格参数
数据手册
替代型号RGP10G 概述
1.0A快速恢复整流器 肖特基二极管 整流二极管
RGP10G 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 包装说明： | D4, 2 PIN | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| Factory Lead Time： | 10 weeks | 风险等级： | 0.94 |
| 其他特性： | METALLURGICALLY BONDED | 外壳连接： | ISOLATED |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | 最大正向电压 (VF)： | 1.3 V |
| JEDEC-95代码： | DO-41 | JESD-30 代码： | O-PALF-W2 |
| JESD-609代码： | e3 | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 175 °C |
| 最低工作温度： | -65 °C | 最大输出电流： | 1 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 最大功率耗散： | 3 W | 认证状态： | Not Qualified |
| 最大重复峰值反向电压： | 400 V | 最大反向恢复时间： | 0.15 µs |
| 子类别： | Rectifier Diodes | 表面贴装： | NO |
| 端子面层： | Tin (Sn) | 端子形式： | WIRE |
| 端子位置： | AXIAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| Base Number Matches： | 1 |
RGP10G 数据手册
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RGP10A - RGP10M
Features
• 1.0 ampere operation at TA = 55°C
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical IR less than 1µA.
DO-41
COLOR BAND DENOTES CATHODE
• Fast switching for high efficiency.
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
10A 10B 10D 10G 10J
10K
10M
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
50
100 200 400 600
800 1000
V
A
1.0
.375 " lead length @ T = 55 C
°
L
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30
A
Storage Temperature Range
-65 to +175
-65 to +175
°C
°C
Tstg
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
3.0
W
50
RθJA
°C/W
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Device
Units
10A 10B 10D 10G 10J
10K
10M
VF
trr
Forward Voltage @ 1.0 A
1.3
V
Reverse Recovery Time
150
250
500
ns
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IR
5.0
200
µA
µA
Reverse Current @ rated VR TA = 25°C
TA = 150°C
CT
Total Capacitance
15
pF
VR = 4.0 V, f = 1.0 MHz
2001 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C
Typical Characteristics
1
30
25
20
15
10
5
0.75
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.5
0.25
.375" (9.0mm) LEAD
LENGTHS
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Lead Temperature [ºC]
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve
Figure 2. Non-Repetitive Surge Current
10
10
T
= 125ºC
A
1
1
0.1
T
= 75ºC
= 25ºC
A
0.1
T
= 25 C
º
A
T
A
Pulse Width = 300µs
2% Duty Cycle
0.01
0.4
0.01
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
80
100
120
140
Forward Voltage, VF [V]
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
100
50
20
10
5
2
1
1
2
5
10
20
50
100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
50Ω
50Ω
trr
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
DUT
0
Pulse
Generator
(Note 2)
50V
(approx)
-0.25A
(+)
50Ω
NONINDUCTIVE
OSCILLOSCOPE
(Note 1)
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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RGP10G 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 1N4004G | EIC | GLASS PASSIVATED JUNCTION SILICON RECTIFIERS | 类似代替 |
|
| 1N4004 | ONSEMI | Axial Lead Standard Recovery Rectifiers | 类似代替 |
|
| 1N4936RL | ONSEMI | Axial−Lead Fast−Recovery Rectifiers | 类似代替 |
|
RGP10G 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| RGP10G-004 | NJSEMI | Diode Switching 400V 1A 2-Pin DO-41 | 获取价格 |
|
| RGP10G-7001 | NJSEMI | Diode Switching 400V 1A 2-Pin DO-204AL Ammo | 获取价格 |
|
| RGP10G-A | MCC | Rectifier Diode, | 获取价格 |
|
| RGP10G-AP | MCC | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 | 获取价格 |
|
| RGP10G-B | MCC | Rectifier Diode, | 获取价格 |
|
| RGP10G-BP | MCC | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 | 获取价格 |
|
| RGP10G-E3 | VISHAY | Rectifier Diode, 1 Element, 1A, 400V V(RRM), | 获取价格 |
|
| RGP10G-E3/23 | VISHAY | Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN | 获取价格 |
|
| RGP10G-E3/53 | VISHAY | DIODE GEN PURP 400V 1A DO204AL | 获取价格 |
|
| RGP10G-E3/54 | VISHAY | Diode Switching 400V 1A 2-Pin DO-204AL T/R | 获取价格 |
|
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