RHRG75120 [ONSEMI]
75A，1200V，极快速二极管;
| 型号： | RHRG75120 |
| 厂家： | 
ONSEMI |
| 描述： | 75A，1200V，极快速二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总6页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
PIN ASSIGNMENT
Hyperfast Diode
CATHODE
(BOTTOM SIDE
METAL)
K
A
75 A, 1200 V
RHRG75120
Description
CATHODE
The RHRG75120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling / clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
ANODE
TO−247−2LD
CASE 340CL
MARKING DIAGRAM
Features
$Y&Z&3&K
• Hyperfast Recovery, t = 100 ns (@ I = 75 A)
RHRG75120
rr
F
• Max Forward Voltage, V = 3.2 V (@ T = 25°C)
F
C
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
RHRG75120
= Specific Device Code
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Rating
Value
1200
1200
1200
75
Unit
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
RWM
V
V
V
R
V
I
Average Rectified Forward Current
A
F(AV)
@ T = 42°C
C
I
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
150
500
A
A
FRM
I
Non−Repetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
FSM
P
Maximum Power Dissipation
190
50
W
mJ
°C
D
E
AVL
Avalanche Energy (See Figures 7 and 8)
Operating and Storage Temperature
T , T
−65 to
+175
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Maximum Thermal Resistance, Junction
to Case
0.8
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
August 2022 − Rev. 4
RHRG75120/D
RHRG75120
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
F
Instantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
I = 75 A
F C
−
−
−
−
3.2
2.6
V
F
I = 75 A, T = 150°C
I
R
Instantaneous Reverse Current
V
R
V
R
= 1200 V
−
−
−
−
250
2
mA
mA
= 1200 V, T = 150°C
C
T
Reverse Recovery Time (See Figure 6),
Summation of t + t
I = 1 A, dI /dt = 100 A/ms
−
−
−
−
85
ns
ns
ns
rr
F
F
100
I = 75 A, dI /dt = 100 A/ms
a
b
F
F
t
a
Time to Reach Peak Reverse Current
(See Figure 6)
I = 75 A, dI /dt = 100 A/ms
−
60
−
−
F
F
t
b
Time from Peak I
to Projected Zero Crossing of
I = 75 A, dI /dt = 100 A/ms
F F
−
25
RM
I
Based on a Straight Line from Peak I
through
RM
RM
25% of I
(See Figure 6)
RM
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Shipping
RHRG75120
RHRG75120
TO−247−2L
450 / Tube
www.onsemi.com
2
RHRG75120
TYPICAL PERFORMANCE CURVES
400
100
1000
100
10
175°C
100°C
175°C
100°C
10
1
25°C
1
25°C
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V , Forward Voltage (V)
0
0
200
400
600
800
1000 1200
F
V , Reverse Voltage (V)
R
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Forward Current vs. Forward Voltage
100
80
60
40
20
0
80
60
40
20
0
T
= 25°C, dI /dt = 100 A/ms
F
C
T
rr
DC
t
a
SQ. WAVE
t
b
25
50
75
100
125
150
175
1
10
I , Forward Current (A)
80
T , Case Temperature (°C)
F
C
Figure 3. Trr, ta and tb Curves vs. Forward Current
Figure 4. Current Derating Curve
www.onsemi.com
3
RHRG75120
TEST CIRCUITS AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
t
rr
F
I
F
t
b
DUT CURRENT
SENSE
t
a
R
0
G
+
V
DD
V
GE
0.25 I
RM
−
IGBT
t
1
I
RM
t
2
Figure 6. Trr Waveforms and Definitions
Figure 5. Trr Test Circuit
I
= 1.6 A
MAX
L = 40 mH
R < 0.1 W
2
E
= 1/2LI [V
/(V
− V )]
R(AVL
AVL
1
R(AVL)
CES
R(AVL) DD
V
AVL
Q = IGBT (BV
> DUT V
)
R
L
+
V
CURRENT
SENSE
I
L
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 8. Avalanche Current and Voltage Waveforms
Figure 7. Avalanche Energy Test Circuit
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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