RHRP860 [ONSEMI]
8 A、600 V 超高速二极管;
| 型号： | RHRP860 |
| 厂家： | 
ONSEMI |
| 描述： | 8 A、600 V 超高速二极管 软恢复二极管 超快速软恢复二极管 局域网 |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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RHRP840, RHRP860
Data Sheet
January 2002
8A, 400V - 600V Hyperfast Diodes
Features
The RHRP840 and RHRP860 are hyperfast diodes with soft
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
recovery characteristics (t < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
rr
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
These devices are intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Their low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many
power switching circuits reducing power loss in the switching
transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49059.
Ordering Information
Packaging
JEDEC TO-220AC
PART NUMBER
PACKAGE
TO-220AC
TO-220AC
BRAND
RHRP840
RHRP860
RHRP840
ANODE
RHRP860
CATHODE
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RHRP840
RHRP860
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
400
400
8
600
600
600
8
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
o
(T = 150 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
16
16
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
100
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
20
75
20
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
-65 to 175
-65 to 175
C
STG
J
©2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
RHRP840, RHRP860
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
RHRP840
RHRP860
SYMBOL
TEST CONDITION
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V
V
I
I
= 8A
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.7
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.1
1.7
-
F
F
F
o
= 8A, T = 150 C
V
C
I
V
V
V
V
= 400V
= 600V
-
-
µA
µA
µA
µA
ns
R
R
R
R
R
-
-
100
-
o
= 400V, T = 150 C
C
-
500
-
-
o
= 600V, T = 150 C
-
-
500
30
35
-
C
t
I
I
I
I
I
= 1A, dI /dt = 200A/µs
-
30
35
-
-
rr
F
F
F
F
F
F
= 8A, dI /dt = 200A/µs
-
-
ns
F
t
t
= 8A, dI /dt = 200A/µs
18
10
56
25
-
18
10
56
25
-
ns
a
F
= 8A, dI /dt = 200A/µs
-
-
ns
b
F
Q
= 8A, dI /dt = 200A/µs
-
-
nC
pF
RR
F
C
V
= 10V, I = 0A
-
-
J
R
F
o
R
2
2
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 9), summation of t + t .
a b
rr
t = Time to reach peak reverse current (See Figure 9).
a
t = Time from peak I
to projected zero crossing of I
based on a straight line from peak I
through 25% of I
(See Figure 9).
RM
b
RM
= Reverse recovery charge.
RM
RM
Q
RR
CJ = Junction capacitance.
= Thermal resistance junction to case.
R
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
40
1000
100
o
175 C
10
o
100 C
10
1
o
o
o
175 C 100 C
25 C
o
0.1
25 C
1
0.01
0.5
3
0.5
2
2.5
0
1.5
0
100
200
V , REVERSE VOLTAGE (V)
R
300
400
500
600
1
V
, FORWARD VOLTAGE (V)
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
RHRP840, RHRP860
Typical Performance Curves (Continued)
35
30
25
20
15
60
50
40
o
o
T
= 25 C, dI /dt = 200A/µs
T
= 100 C, dI /dt = 200A/µs
C
F
C
F
t
rr
t
rr
30
20
t
a
t
a
10
5
t
b
t
b
10
0
0
0.5
1
4
8
0.5
1
4
8
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
10
8
90
o
T
= 175 C, dI /dt = 200A/µs
C
F
75
60
DC
t
rr
6
4
SQ. WAVE
45
30
t
a
t
2
0
b
15
0
135
165
125
145
155
175
0.5
1
4
8
o
T
, CASE TEMPERATURE ( C)
C
I , FORWARD CURRENT (A)
F
FIGURE 6. CURRENT DERATING CURVE
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
a
b
60
50
40
30
20
10
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
RHRP840, RHRP860
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
F
G
L
t
t CONTROL I
1 AND
2 F
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 8. t TEST CIRCUIT
rr
FIGURE 9. t WAVEFORMS AND DEFINITIONS
rr
I
= 1A
MAX
L = 40mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
- V )]
DD
AVL
= IGBT (BV
R(AVL) R(AVL)
V
AVL
Q
> DUT V )
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
I
V
Q
1
V
DD
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RHRP840, RHRP860 Rev. B
4.09
3.50
M
M
B A
0.36
10.67
9.65
B
A
8.89
6.86
3.43
2.54
1.40
0.51
6.86
5.84
7°
3°
13.40
12.19
16.51
14.22
16.15
15.75
9.40
8.38
5°
3°
5°
3°
6.35 MAX
1
2
0.60 MAX
C
14.73
13.60
1.65
1.25
1.91
0.61
0.33
2.54
5.08
2.92
2.03
1.02
0.38
M
0.36
C
A
B
5°
3°
5°
3°
4.80
4.30
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DRAWING FILE NAME: TO220A02REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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