RS1B [ONSEMI]
1.0A快速恢复整流器;型号: | RS1B |
厂家: | ONSEMI |
描述: | 1.0A快速恢复整流器 |
文件: | 总5页 (文件大小:248K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Fast Rectifiers
RS1A - RS1M
Features
• Glass−Passivated Junction
• For Surface Mounted Applications
• Built−in Strain Relief, Ideal for Automated Placement
• UL Certified: Certificate # E326243
• These Devices are Pb−Free and are RoHS Compliant
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SMA
CASE 403AE
MARKING DIAGRAM
&Y&Z&3
RS1x
&Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
RS1x
x
= Specific Device Code
= A/B/D/G/J/K/M
ORDERING INFORMATION
†
Part Number
RS1A
Marking
RS1A
RS1B
RS1D
RS1G
RS1J
Package
Shipping
SMA
(Pb−Free)
7500 / Tape & Reel
RS1B
RS1D
RS1G
RS1J
RS1K
RS1K
RS1M
RS1M
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2021 − Rev. 3
RS1M/D
RS1A − RS1M
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
RS1G
400
RS1A
RS1B
RS1D
RS1J
RS1K
RS1M
Symbol
Parameter
Units
V
RRM
Maximum Repetitive Reverse Voltage
50
100
200
600
800
1000
V
A
I
Average Rectified Forward Current at
1.0
F(AV)
T = 100°C
A
I
Non−Repetitive Peak Forward Surge
Current: 8.3 ms Single Half−Sine Wave
30
A
FSM
T
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
1.19
105
32
Unit
W
P
D
Power Dissipation
R
Junction−to−Ambient Thermal Resistance (Note 1)
Junction−to−Lead Thermal Resistance (Note 1)
°C/W
°C/W
q
JA
R
q
JL
1. Device mounted on FR−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)
A
Value
RS1G
1.3
Test
Conditions
RS1A
RS1B
RS1D
RS1J
RS1K
RS1M
Symbol
Parameter
Forward Voltage
Unit
V
F
I = 1.0 A
V
F
t
rr
Reverse Recovery Time
I = 0.5 A,
150
250
500
ns
F
I
R
= 1.0 A,
= 0.25 A
I
rr
I
Reverse Current at Rated
T = 25°C
5.0
50
10
mA
R
A
V
R
T = 125°C
A
C
Total Capacitance
V
R
= 4.0 V,
pF
T
f = 1.0 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
RS1A − RS1M
TYPICAL PERFORMANCE CHARACTERISTICS
30
25
1.6
1.4
1.2
1
20
15
10
0.8
0.6
0.4
0.2
0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
5
0
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Number of Cycles at 60 Hz
Ambient Temperature [°C]
Figure 1. Forward Current Derating Curve
Figure 2. Non−Repetitive Surge Current
10
10
1
T
= 125°C
= 100°C
A
T
A
= 125°C
1
0.1
T
A
0.1
0.01
T
A
= 25°C
T
A
= 25°C
Pulse Width = 300 ms
2% Duty Cycle
0.001
0.01
0
20
40
60
80
100
120
140
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage, V [V]
Percent of Rated Peak Reverse Voltage [%]
F
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs. Reverse Voltage
50
20
10
5
1
1
2
5
10
20
50
100
Reverse Voltage, V [V]
R
Figure 5. Total Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
5.60
4.80
M
B
B
0.13
B
C
B
A
2.65
2.95
2.50
1.65
1.20
1.75
4.30
4.75
4.00
B
A
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.30
0.05
B
DOES NOT COMPLY JEDEC STANDARD
VALUE.
0.203
0.050
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
2.05
1.95
M
0.13
C
B
A
SIDE VIEW
8 °
0 °
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8 °
0 °
DETAIL A
SCALE 20 : 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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