RS1GFA [ONSEMI]
0.8 A、400 V 表面贴装快速恢复;型号: | RS1GFA |
厂家: | ONSEMI |
描述: | 0.8 A、400 V 表面贴装快速恢复 |
文件: | 总5页 (文件大小:244K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Surface Mount Fast
Recovery Rectifiers
0.8 A, 50 V - 1000 V
1
2
Cathode
Anode
RS1AFA, NRVHPRS1AFA
Series
2
1
Features
SOD−123FA
CASE 425AB
• Glass Passivated Chip Junction
• Fast Switching for High Efficiency
• High Surge Capacity
(Color Band Denotes Cathode)
• Low Forward Voltage: 1.3 V Maximum
• UL Flammability 94V−0 Classification
• MSL 1 per J−STD−020
• RoHS Compliant / Green Molding Compound
• Industrial Device Qualified per AEC−Q101 Standards
• NRVHP Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
*See authorized use policy
ORDERING INFORMATION
†
Part Number
RS1AFA
Top Mark
RAL
RBL
RDL
RGL
RJL
Package
Packing Method
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
SOD−123FA
RS1BFA
RS1DFA
RS1GFA
RS1JFA
RS1KFA
RKL
RML
RAL
RBL
RDL
RGL
RJL
RS1MFA
NRVHPRS1AFA
NRVHPRS1BFA
NRVHPRS1DFA
NRVHPRS1GFA
NRVHPRS1JFA
NRVHPRS1KFA
NRVHPRS1MFA
RKL
RML
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2022 − Rev. 3
RS1AFA/D
RS1AFA, NRVHPRS1AFA Series
Table 1. ABSOLUTE MAXIMUM RATINGS Values are at T = 25°C unless otherwise noted.
A
Value
RS1
AFA
RS1
BFA
RS1
DFA
RS1
GFA
RS1
JFA
RS1
KFA
RS1
MFA
Symbol
Parameter
Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Unit
V
V
50
35
50
100
70
200
140
200
400
280
400
0.8
30
600
420
600
800
560
800
1000
700
RRM
RMS
V
V
V
R
DC Blocking Voltage
100
1000
V
I
Average Forward Rectified Current
A
F(AV)
I
Peak Forward Surge Current: 8.3 ms Single
Half Sine−Wave Superimposed on Rated Load
A
FSM
T
Operating Junction Temperature Range
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
J
T
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. THERMAL CHARACTERISTICS (Note 1)
Symbol
Parameter
Typical Thermal Characteristics, Junction−to−Lead
Typical Thermal Resistance, Junction−to−Ambient
Value
32
Unit
°C/W
°C/W
Y
JL
R
105
q
JA
1. Device mounted on 5 mm x 5 mm Cu pad PCB.
Table 3. ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.
A
Symbol
Parameter
Conditions
I = 0.8 A
Min
Typ
Max
Unit
V
F
Instantaneous Forward Volt-
age (Note 2)
1.3
V
F
I
R
Reverse Current at Rated V
T = 25°C
J
5
mA
R
T = 125°C
J
50
C
Junction Capacitance
V
R
= 4 V, f = 1 MHz
10
pF
ns
J
T
rr
Reverse Recovery Time
I = 0.5 A,
RS1AFA, RS1BFA, RS1DFA
RS1GFA, RS1JFA
150
250
500
F
I
= 1 A,
R
I
= 0.25 A
rr
RS1KFA, RS1MFA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test with PW = 300 ms, 1% duty cycle
www.onsemi.com
2
RS1AFA, NRVHPRS1AFA Series
TYPICAL PERFORMANCE CHARACTERISTICS
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T =125oC
J
10
1
RESISTIVE OR
INDUCTIVE LOAD
T =100oC
J
0.1
0.01
T =25oC
J
0.001
0
25
50
75
100
125
150
175
0
LEAD TEMPERATURE (oC)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Reverse Characteristics
10
50
40
30
20
Pulse Width=300ms
1% Duty Cycle
8.3ms Single Half Sine Wave
T =125oC
J
1
TJ=25oC
10
0
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
NUMBER OF CYCLES AT 60 Hz
FORWARD VOLTAGE (V)
Figure 3. Maximum Non−Repetitive Forward
Figure 4. Typical Instantaneous Forward
Characteristics
Surge Current
100
f=1.0MHz
Vsig=50mVp−p
10
1
1
10
100
REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
Figure 6. Reverse Recovery Time
Characteristic and Test Circuit Diagram
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−123FA
CASE 425AB
ISSUE A
DATE 11 AUG 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13722G
SOD−123FA
PAGE 1 OF 1
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