RS1GFA [ONSEMI]

0.8 A、400 V 表面贴装快速恢复;
RS1GFA
型号: RS1GFA
厂家: ONSEMI    ONSEMI
描述:

0.8 A、400 V 表面贴装快速恢复

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DATA SHEET  
www.onsemi.com  
Surface Mount Fast  
Recovery Rectifiers  
0.8 A, 50 V - 1000 V  
1
2
Cathode  
Anode  
RS1AFA, NRVHPRS1AFA  
Series  
2
1
Features  
SOD123FA  
CASE 425AB  
Glass Passivated Chip Junction  
Fast Switching for High Efficiency  
High Surge Capacity  
(Color Band Denotes Cathode)  
Low Forward Voltage: 1.3 V Maximum  
UL Flammability 94V0 Classification  
MSL 1 per JSTD020  
RoHS Compliant / Green Molding Compound  
Industrial Device Qualified per AECQ101 Standards  
NRVHP Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
*See authorized use policy  
ORDERING INFORMATION  
Part Number  
RS1AFA  
Top Mark  
RAL  
RBL  
RDL  
RGL  
RJL  
Package  
Packing Method  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
SOD123FA  
RS1BFA  
RS1DFA  
RS1GFA  
RS1JFA  
RS1KFA  
RKL  
RML  
RAL  
RBL  
RDL  
RGL  
RJL  
RS1MFA  
NRVHPRS1AFA  
NRVHPRS1BFA  
NRVHPRS1DFA  
NRVHPRS1GFA  
NRVHPRS1JFA  
NRVHPRS1KFA  
NRVHPRS1MFA  
RKL  
RML  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
August, 2022 Rev. 3  
RS1AFA/D  
RS1AFA, NRVHPRS1AFA Series  
Table 1. ABSOLUTE MAXIMUM RATINGS Values are at T = 25°C unless otherwise noted.  
A
Value  
RS1  
AFA  
RS1  
BFA  
RS1  
DFA  
RS1  
GFA  
RS1  
JFA  
RS1  
KFA  
RS1  
MFA  
Symbol  
Parameter  
Repetitive Peak Reverse Voltage  
RMS Reverse Voltage  
Unit  
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
0.8  
30  
600  
420  
600  
800  
560  
800  
1000  
700  
RRM  
RMS  
V
V
V
R
DC Blocking Voltage  
100  
1000  
V
I
Average Forward Rectified Current  
A
F(AV)  
I
Peak Forward Surge Current: 8.3 ms Single  
Half SineWave Superimposed on Rated Load  
A
FSM  
T
Operating Junction Temperature Range  
Storage Temperature Range  
55 to +150  
55 to +150  
°C  
°C  
J
T
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
Table 2. THERMAL CHARACTERISTICS (Note 1)  
Symbol  
Parameter  
Typical Thermal Characteristics, JunctiontoLead  
Typical Thermal Resistance, JunctiontoAmbient  
Value  
32  
Unit  
°C/W  
°C/W  
Y
JL  
R
105  
q
JA  
1. Device mounted on 5 mm x 5 mm Cu pad PCB.  
Table 3. ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Conditions  
I = 0.8 A  
Min  
Typ  
Max  
Unit  
V
F
Instantaneous Forward Volt-  
age (Note 2)  
1.3  
V
F
I
R
Reverse Current at Rated V  
T = 25°C  
J
5
mA  
R
T = 125°C  
J
50  
C
Junction Capacitance  
V
R
= 4 V, f = 1 MHz  
10  
pF  
ns  
J
T
rr  
Reverse Recovery Time  
I = 0.5 A,  
RS1AFA, RS1BFA, RS1DFA  
RS1GFA, RS1JFA  
150  
250  
500  
F
I
= 1 A,  
R
I
= 0.25 A  
rr  
RS1KFA, RS1MFA  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Pulse test with PW = 300 ms, 1% duty cycle  
www.onsemi.com  
2
 
RS1AFA, NRVHPRS1AFA Series  
TYPICAL PERFORMANCE CHARACTERISTICS  
100  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
T =125oC  
J
10  
1
RESISTIVE OR  
INDUCTIVE LOAD  
T =100oC  
J
0.1  
0.01  
T =25oC  
J
0.001  
0
25  
50  
75  
100  
125  
150  
175  
0
LEAD TEMPERATURE (oC)  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Figure 1. Forward Current Derating Curve  
Figure 2. Typical Reverse Characteristics  
10  
50  
40  
30  
20  
Pulse Width=300ms  
1% Duty Cycle  
8.3ms Single Half Sine Wave  
T =125oC  
J
1
TJ=25oC  
10  
0
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
NUMBER OF CYCLES AT 60 Hz  
FORWARD VOLTAGE (V)  
Figure 3. Maximum NonRepetitive Forward  
Figure 4. Typical Instantaneous Forward  
Characteristics  
Surge Current  
100  
f=1.0MHz  
Vsig=50mVpp  
10  
1
1
10  
100  
REVERSE VOLTAGE (V)  
Figure 5. Typical Junction Capacitance  
Figure 6. Reverse Recovery Time  
Characteristic and Test Circuit Diagram  
www.onsemi.com  
3
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOD123FA  
CASE 425AB  
ISSUE A  
DATE 11 AUG 2022  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13722G  
SOD123FA  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
Technical Library: www.onsemi.com/design/resources/technicaldocumentation  
onsemi Website: www.onsemi.com  
ONLINE SUPPORT: www.onsemi.com/support  
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