RUR1S1560S9A [ONSEMI]
15A，600V，超快二极管;
| 型号： | RUR1S1560S9A |
| 厂家： | 
ONSEMI |
| 描述： | 15A，600V，超快二极管 超快软恢复二极管 快速软恢复二极管 |
| 文件： | 总6页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
15 A, 600 V, Ultrafast Diode
RUR1S1560S9A
Description
The RUR1S1560S is an ultrafast diode with low forward voltage
drop. This device is intended for use as freewheeling and clamping
diodes in a variety of switching power supplies and other power
switching applications. It is specially suited for use in switching power
supplies and industrial application.
2
D PAK2 (TO−263−2L)
CASE 418BK
SYMBOL
K
Features
• Ultrafast Recovery t = 60 ns (@ I = 15 A)
rr
F
• Max Forward Voltage, V = 1.5 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• These Devices are Pb−Free and are RoHS Compliant
A
Applications
MARKING DIAGRAM
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
$Y&Z&3&K
RUR1560
ABSOLUTE MAXIMUM RATINGS
(T = 25°C unless otherwise specified)
C
Parameter
Symbol
Value
600
600
600
15
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
$Y = Logo
&Z = Assembly Plant Code
&3 = Date Code
V
V
V
R
V
&K = Lot Run Traceability Code
RUR1560 = Specific Device Code
Average Rectified Forward Current
I
A
F(AV)
Repetitive Peak Surge Current
(20 kHz Square Wave)
I
30
A
FRM
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase 60 Hz)
I
200
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
FSM
this data sheet.
Power Dissipation
P
100
20
W
mJ
°C
D
Avalanche Energy (1 A, 40 mH)
Operating and Storage Temperature
Maximum Temperature for Soldering
E
AVL
T , T
−55 to 175
J
STG
T
300
260
°C
°C
L
Leads at 0.063 in (1.6 mm) from Case
for 10 s, Package Body for 10 s,
see Techbrief TB334
T
pkg
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
1.5
60
°C/W
°C/W
q
JC
JA
q
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
November, 2021 − Rev. 2
RUR1S1560S9A/D
RUR1S1560S9A
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
−
Typ
−
Max
1.5
1.2
100
500
55
Unit
V
F
Instantaneous Forward Voltage
(Pulse width = 300 ms, Duty cycle = 2%)
I = 15 A
V
F
I = 15 A, T = 150°C
−
−
F
C
I
R
Instantaneous Reverse Current
V
= 600 V
−
−
mA
R
R
V
= 600 V, T = 150°C
−
−
C
t
rr
Reverse Recovery Time (see Package
−
−
ns
I = 1 A, dI /dt = 100 A/ms,
F
F
Dimensions section), summation of t + t
V
R
= 30 V
a
b
I = 15 A, dI /dt = 100 A/ms,
−
−
−
−
−
−
60
−
F
F
V
R
= 30 V
t
Time to Reach Peak Reverse Current
(see Package Dimensions section)
20
30
15
17
ns
ns
I = 1 A, dI /dt = 100 A/ms,
a
F
F
V
R
= 30 V
I = 15 A, dI /dt = 100 A/ms,
−
F
F
V
R
= 30 V
t
b
Time from Peak I
to projected Zero
−
I = 1 A, dI /dt = 100 A/ms,
RM
F
F
Crossing of I
based on a Straight Line
V
R
= 30 V
RM
from Peak I
through 25% of I
RM
RM
I = 15 A, dI /dt = 100 A/ms,
−
F
F
(see Package Dimensions section).
V
R
= 30 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
Top Mark
Package
D PAK2 (TO−263−2L) (Pb−Free)
Shipping
2
RUR1S1560S9A
RUR1560
800 Units/ Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
RUR1S1560S9A
TYPICAL PERFORMANCE CHARACTERISTICS
100.0
10.0
200
100
o
T
T
= 150 C
J
o
10
T
= 150 C
J
o
1
= 100 C
J
o
T
T
= 100 C
1.0
0.10
0.1
J
J
0.1
o
= 25 C
0.010
o
T
= 25 C
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
500
600
V , FORWARD VOLTAGE DROP (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Reverse Voltage vs. Reverse Current
16
80
70
60
50
40
14
12
10
8
DC
SQUARE WAVE
t
rr
6
4
30
20
10
0
t
a
b
2
0
t
140
145
150
155
160
165
170
175
180
1
10
100
I , FORWARD CURRENT (A)
F
T , CASE TEMPERATURE (5C)
C
Figure 3. Typical trr. ta and tb Curves
vs. Forward Current
Figure 4. Typical Current Derating Curve vs.
Case Temperature
www.onsemi.com
3
RUR1S1560S9A
TEST CIRCUITS AND WAVEFORMS
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
G
F
L
t
t CONTROL I
2 F
1 AND
DUT
CURRENT
SENSE
dI
F
t
rr
R
G
I
F
dt
+
t
t
b
a
V
−
0
V
DD
GE
MOS IRF840
t
1
0.25 I
RM
t
2
I
RM
Figure 5. trr Test Circuit
Figure 6. trr Waveforms and Definitions
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
DD
2
= 1/2LI [V
/(V
− V )]
DD
AVL
R(AVL) R(AVL)
> DUT V )
R(AVL)
V
AVL
Q
= IGBT (BV
1
CES
LR
+
V
CURRENT
SENSE
I
I
L
DD
DD
L
Q
1
IV
V
DUT
−
t
t
t
2
t
0
1
Figure 7. Avalanche Energy Test Circuit
Figure 8. Avalanche Current and Voltage
Waveforms
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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相关型号：
RUR1S1560S9A_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, LEAD FREE, D2PAK-3
FAIRCHILD
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