RURD420S9A [ONSEMI]
4A，200V，Ultrafast 二极管;
| 型号： | RURD420S9A |
| 厂家： | 
ONSEMI |
| 描述： | 4A，200V，Ultrafast 二极管 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总7页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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RURD420S
Data Sheet
January 2002
4A, 200V Ultrafast Diodes
Features
The RURD420S is an ultrafast diode with soft recovery
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . <30ns
characteristics (t < 30ns). It has low forward voltage drop
and has ion-implanted epitaxial planar construction.
rr
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175 C
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .200V
• Avalanche Energy Rated
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies and
other power switching applications. It’s low stored charge and
ultrafast soft recovery minimize ringing and electrical noise in
many power switching circuits, reducing power loss in the
switching transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Formerly developmental type TA49034.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RUR420
Packaging
RURD420S
TO-252
JEDEC STYLE TO-252
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, i.e., RURD420S9A.
CATHODE
(FLANGE)
CATHODE
ANODE
Symbol
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
RURD420S
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
200
200
200
4
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
F(AV)
(T = 159 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
8
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
40
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
30
10
W
D
Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
, T
STG
-65 to 175
C
J
o
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
300
260
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
C
PKG
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
MIN
TYP
MAX
1.0
UNITS
V
I
I
= 4A
-
-
-
-
V
V
F
F
F
o
= 4A, T = 150 C
0.83
C
©2002 Fairchild Semiconductor Corporation
RURD420S Rev. C
RURD420S
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
µA
I
V
V
= 200V
-
-
-
-
-
-
-
-
-
-
-
100
R
R
o
= 200V, T = 150 C
500
µA
R
C
t
I
I
I
I
I
= 1A, dI /dt = 100A/µs
-
30
35
-
ns
rr
F
F
F
F
F
F
= 4A, dI /dt = 100A/µs
-
ns
F
t
t
= 4A, dI /dt = 100A/µs
11
9
ns
a
b
F
= 4A, dI /dt = 100A/µs
-
ns
F
Q
= 4A, dI /dt = 100A/µs
12
15
-
-
nC
pF
RR
F
C
V
= 10V, I = 0A
-
J
R
F
o
R
5
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300µs, D = 2%).
F
I
= Instantaneous reverse current.
R
t
= Reverse recovery time (See Figure 8), summation of t + t .
a b
rr
t
= Time to reach peak reverse current (See Figure 8).
a
t
= Time from peak I
RM
to projected zero crossing of I
based on a straight line from peak I
through 25% of I (See Figure 8).
RM
b
RM
RM
Q
= Reverse recovery charge.
RR
C = Junction capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
100
10
1
20
o
175 C
o
175 C
10
o
100 C
0.1
o
o
100 C
25 C
0.01
1
o
25 C
0.001
0.5
0
50
100
150
200
0
0.25
0.5
0.75
1
1.25
1.5
V
, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
R
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
RURD420S Rev. C
RURD420S
Typical Performance Curves (Continued)
25
50
40
30
o
o
T
= 100 C, dI /dt = 100A/µs
C
F
T
= 25 C, dI /dt = 100A/µs
C
F
20
t
rr
t
rr
15
10
5
t
a
t
t
20
10
0
a
t
b
b
0
4
0.5
1
4
0.5
1
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
100
80
5
o
T
= 175 C, dI /dt = 100A/µs
C
F
t
rr
4
3
DC
60
t
a
SQ. WAVE
40
20
0
2
1
t
b
0
0.5
4
1
150
155
160
165
170
175
I , FORWARD CURRENT (A)
F
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
G
F
L
t
t CONTROL I
2 F
1 AND
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 7. t TEST CIRCUIT
rr
FIGURE 8. t WAVEFORMS AND DEFINITIONS
rr
©2002 Fairchild Semiconductor Corporation
RURD420S Rev. C
RURD420S
Test Circuits and Waveforms (Continued)
I = 1A
L = 20mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
R(AVL)
- V )]
DD
AVL
R(AVL)
> DUT V
V
AVL
Q
= IGBT (BV
)
R(AVL)
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
DD
I
V
Q
1
V
DUT
-
t
t
t
2
t
0
1
FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 10. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RURD420S Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
POP™
SuperFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FACT Quiet Series™
FAST
FASTr™
FPS™
FRFET™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
Power247™
PowerTrench
QFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
QS™
QT Optoelectronics™ TinyLogic
GlobalOptoisolator™
GTO™
Quiet Series™
RapidConfigure™
RapidConnect™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
SILENT SWITCHER UltraFET
ImpliedDisconnect™
SMART START™
SPM™
Stealth™
VCX™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
Across the board. Around the world.™
The Power Franchise™
ProgrammableActive Droop™
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FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
RURD420S9A_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 200V V(RRM), Silicon, TO-252, TO-252, 3 PIN
FAIRCHILD
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