RURD660S9A-F085P [ONSEMI]
600 V、6 A、1.26 V、DPAK超快速整流器;
| 型号： | RURD660S9A-F085P |
| 厂家： | 
ONSEMI |
| 描述： | 600 V、6 A、1.26 V、DPAK超快速整流器 二极管 |
| 文件： | 总6页 (文件大小：471K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultrafast Power Rectifier
6 A, 600 V
RURD660S9A-F085
The RURD660S9A−F085 is an ultrafast diode with soft recovery
characteristics (trr < 83 ns). It has a low forward voltage drop and is of
silicon nitride passivated ion−implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and
rectifier in a variety of switching power supplies and other power
switching applications. Its low stored charge and ultrafast soft
recovery minimize ringing and electrical noise in many power
switching circuits, thus reducing powerloss in the switching
transistors.
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1, 2, 4. Cathode
3. Anode
Features
• High Speed Switching (t = 63 ns (Typ.) @ I = 6 A)
4
rr
F
• Low Forward Voltage (V = 1.26 V (Typ.) @ I = 6 A)
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
2
3
1
DPAK3 (TO−252 3 LD)
Applications
CASE 369AS
• General Purpose
• Switching Mode Power Supply
• Power Switching Circuits
MARKING DIAGRAM
$Y&Z&3&K
RUR660
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Ratings
600
Unit
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
RWM
RUR660 = Specific Device Code
V
600
V
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= 3−Digit Date Code
V
R
600
V
I
Average Rectified Forward Current
6
A
F(AV)
@ T = 25°C
= 2−Digits Lot Run Traceability Code
C
I
Non−repetitive Peak Surge Current
60
A
FSM
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
T , T
Operating Junction and Storage
Temperature
− 55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Max
Unit
R
Maximum Thermal Resistance,
Junction to Case
3
°C/W
q
JC
R
Maximum Thermal Resistance,
140
50
°C/W
°C/W
q
JA
(Note 1) Junction to Ambient
R
Maximum Thermal Resistance,
(Note 2) Junction to Ambient
q
JA
1. Mounted on a minimum pad follow by JEDEC standard.
2
2. Mounted on a 1 in pad of 2 oz copper follow by JEDEC standard.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
July, 2020 − Rev. 4
RURD660S9A−F085/D
RURD660S9A−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Condition
Min
−
Typ
−
Max
100
500
Unit
mA
I
R
Instantaneous Reverse
Current
V
R
= 600 V
T
T
= 25°C
= 175°
C
−
−
mA
C
V
Instantaneous Forward
I = 6 A
F
T
C
T
C
= 25°C
= 175°
−
−
1.26
1.04
1.5
−
V
V
FM
(Note 3) Voltage
t
Reverse Recovery Time
T
= 25°C
−
25
33
ns
I = 1 A, di/dt = 200 A/ms, V = 390 V
rr
C
F
CC
(Note 4)
I = 6 A, di/dt = 200 A/ms, V = 390 V
T
C
T
C
= 25°C
= 175°
−
−
63
119
83
−
ns
ns
F
CC
t
t
Reverse Recovery Time
I = 6 A, di/dt = 200 A/ms, V = 390 V
T
C
= 25°C
−
−
−
23
40
151
−
−
−
ns
ns
nC
a
b
F
CC
Qrr
Reverse Recovery Charge
W
AVL
Avalanche Energy (L = 20 mH)
10
−
−
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%
4. Guaranteed by design
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t
t CONTROL I
2 F
1 AND
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
G
F
dt
t
t
b
+
a
0
V
−
V
DD
GE
IGBT
t
1
0.25 I
RM
t
2
I
RM
Figure 1. trr Test Circuit
Figure 2. trr Waveforms and Definitions
I = 1 A
L = 20 Mh
R < 0.1 W
AVL
2
V
E
= 1/2LI [VR(AVL) / (VR(AVL) − VDD)]
AVL
Q
1
= IGBT (BV
> DUT V
)
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
DD
I
V
Q
1
V
DUT
−
t
t
t
2
t
0
1
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Waveforms
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2
RURD660S9A−F085
TYPICAL PERFORMANCE CHARACTERISTICS
100
10
1
100
10
1
T
T
= 175°C
= 125°C
C
C
T
C
= 175°C
T
C
= 125°C
0.1
T
C
= 25°C
T
C
= 25°C
0.1
0.01
0.1
0.5
1.0
1.5
2.0
2.5
100
500
100
200
300
400
500
600
500
175
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 9. Typical Forward Voltage Drop vs.
Forward Current
Figure 10. Typical Reverse Current
vs. Reverse Voltage
90
80
180
150
120
90
I = 6 A
Typical Capacitance
at 10 V = 24 pF
F
T
= 175°C
C
60
40
T
= 125°C
C
60
T
= 25°C
C
20
10
30
100
0.1
1
10
200
300
400
V , Reverse Voltage (V)
di/dt (A/ms)
R
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time vs. di/dt
15
10
5
35
30
T
C
= 175°C
20
10
0
T
= 125°C
C
T
C
= 25°C
I = 6 A
F
0
100
200
300
400
25
50
75
100
125
150
di/dt (A/ms)
T , Case Temperature (°C)
C
Figure 7. Typical Reverse Recovery Current vs. di/dt
Figure 8. Forward Current Derating Curve
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3
RURD660S9A−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
800
I = 6 A
F
T
C
= 175°C
600
400
200
0
T
= 125°C
= 25°C
C
T
C
100
200
300
di/dt [A/ms]
400
500
Figure 12. Reverse Recovery Charge
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.1
0.01
single pulse
*NOTES:
1. RthJC = 1.7°C/W Typ.
2. Duty Factor, D = t1 / t2
3. TJM − TC = PDM x ZthJC (t)
10−5
10−4
10−3
10−2
10−1
100
101
102
t , Square Wave Pulse Duration (sec)
1
Figure 11. Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping
RURD660S9A−F085
RUR660
TO−252 3 LD
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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相关型号：
RURD660S9A_F085
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA, DPAK-3/2
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RURD660S9A_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252,
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