RURG3060-F085 [ONSEMI]
600V，30A，1.26V，TO-247（2 引线）Ultrafast 整流器;
| 型号： | RURG3060-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，30A，1.26V，TO-247（2 引线）Ultrafast 整流器 二极管 |
| 文件： | 总7页 (文件大小：5407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ultrafast Rectifier
30 A, 600 V
RURG3060-F085
Description
The RURG3060−F085 is an ultrafast diode with soft recovery
characteristics (trr< 80 ns). It has low forward voltage drop and is
silicon nitride passivated ion−implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode
and rectifier in a variety of switching power supplies and other power
switching applications. Its low stored charge and ultrafast recovery
with soft recovery characteristic minimizes ringing and electrical
noise in many power switching circuits, thus reducing power loss
in the switching transistors.
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1
1. Cathode
2. Anode
2
Features
• High Speed Switching (t = 60 ns(Typ.) @ I = 30 A)
rr
F
TO−247−2LD
CASE 340CL
• Low Forward Voltage (V = 1.5 V(Max.) @ I = 30 A)
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free
Applications
• Automotive DC/DC Converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
1
2
2. Anode
1. Cathode
MARKING DIAGRAM
$Y&Z&3&K
RURG3060
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
RURG3060
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2020 − Rev. 4
RURG3060−F085/D
RURG3060−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Value
600
600
600
30
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
Average Rectified Forward Current (T = 25°C)
I
A
C
F(AV)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 50 Hz)
Avalanche Energy (1 A, 40 mH)
I
90
A
FSM
E
20
mJ
°C
AVL
Operating Junction and Storage Temperature
T
T
−55 to
+175
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Tube
Quantity
RURG3060−F085
RURG3060
TO−247−2LD
−
30
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
Symbol
Value
Unit
°C/W
°C/W
R
R
0.7
45
q
JC
JA
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
−
Typ
Max
250
1
Unit
mA
mA
V
Instantaneous Reverse Current
I
R
V
= 600 V
T
C
T
C
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
= 175°C
= 25°C
−
−
R
−
Instantaneous Forward Voltage
(Note 1)
V
FM
I = 30 A
F
−
1.26
1.06
35
1.5
1.3
55
−
V
Reverse Recovery Time
(Note 2)
t
rr
−
ns
I = 1 A, di/dt =100 A/ms,
F
V
CC
= 390 V
I = 30 A, di/dt = 100 A/ms,
CC
T
C
T
C
T
C
= 25°C
= 175°C
= 25°C
−
−
60
231
31
29
92
−
80
−
ns
ns
F
V
= 390 V
Reverse Recovery Time
t
a
I = 30 A, di/dt = 100 A/ms,
−
−
ns
F
CC
V
= 390 V
t
b
−
−
ns
Q
−
−
nC
mJ
Reverse Recovery Charge
Avalanche Energy
rr
E
AVL
I
AV
= 1.0 A, L = 40 mH
20
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse Width = 300 ms, Duty Cycle = 2%
2. Guaranteed by design.
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2
RURG3060−F085
TYPICAL PERFORMANCE CHARACTERISTICS
400
100
1000
100
10
1
10
1
0.1
0.01
1E−3
1E−4
0.1
0.1
0.5
1.0
1.5
2.0
0
400
V , Reverse Voltage (V)
100
200
300
500 600
V , Forward Voltage (V)
F
R
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
400
250
200
150
300
200
100
100
50
0
400
200
300
500
0.1
1
10
100
100
di/dt (A/ms)
V , Reverse Voltage (V)
R
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 3. Typical Junction Capacitance
35
40
30
20
30
25
20
15
10
10
0
5
0
500
100
200
300
400
25
50
75
100
125
150 175
di/dt (A/ms)
Case Temperature, T (°C)
C
Figure 5. Typical Reverse Recovery Current
vs. di/dt
Figure 6. Forward Current Derating Curve
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3
RURG3060−F085
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
2500
2000
1500
1000
500
0
100
500
200
300
400
di/dt (A/ms)
Figure 7. Reverse Recovery Charge
1
0.1
0.001
1
2
−5
−3
−2
−1
0
−4
10
10
10
10
10
10
10
10
t , Square Wave Pulse Duration (sec)
1
Figure 8. Transient Thermal Response Curve
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4
RURG3060−F085
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
dI
dt
2
F
t
rr
F
I
F
t
a
t
b
DUT CURRENT
SENSE
0
R
G
+
0.25 I
V
DD
RM
V
GE
−
IGBT
t
I
1
RM
t
2
Figure 10. trr Waveforms and Definitions
Figure 9. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
AVL
Q = IGBT (BV
1
2
E
= 1/2LI [V
/(V
− V )]
R(AVL
R(AVL)
R(AVL)
DD
> DUT V
)
V
AVL
CES
R
L
+
V
I
L
CURRENT
SENSE
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
2
t
1
t
0
Figure 12. Avalanche Current and Voltage
Waveforms
Figure 11. Avalanche Energy Test Circuit
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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相关型号：
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Rectifier Diode, Avalanche, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, TO-247
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