RURP8100 [ONSEMI]
8A，1000V，超快二极管;
| 型号： | RURP8100 |
| 厂家： | 
ONSEMI |
| 描述： | 8A，1000V，超快二极管 超快软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总8页 (文件大小：746K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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MUR8100E, RURP8100
Data Sheet
November 2013
Features
8 A, 1000 V Ultrafast Diodes
• Ultrafast Recovery trr = 100 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 1.8 V (@ TC = 25°C)
• 1000 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
The MUR8100E, RUR8100 is an ultrafast diode with low
forward voltage drop. This device is intended for use as
freewheeling and clamping diodes in a variety of switching
power supplies and other power switching applications. It
is specially suited for use in switching power supplies and
industrial application.
• RoHS Compliant
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Ordering Information
Packaging
JEDEC TO-220AC
PART NUMBER
PACKAGE
TO-220AC
TO-220AC
BRAND
MU8100
RURP8100
MUR8100E
ANODE
CATHODE
RURP8100
CATHODE
(FLANGE)
NOTE: When ordering, use entire part number.
Symbol
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
MUR8100E
RURP8100
UNIT
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
1000
V
V
V
A
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
1000
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
1000
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
8
F(AV)
o
(T = 155 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave 20kHz)
16
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave 1 Phase 60Hz)
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
75
20
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
-55 to 175
C
J
1
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
MUR8100E, RURP8100
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified.
C
SYMBOL
TEST CONDITION
MIN
TYP
MAX
1.8
1.5
100
500
85
100
-
UNIT
V
V
I
I
= 8 A
-
-
-
-
-
-
-
-
-
-
-
-
-
F
F
o
V
= 8 A, T = 150 C
F
C
I
V
V
= 1000 V
-
µA
µA
ns
ns
ns
ns
nC
pF
R
R
o
-
= 1000 V, T = 150 C
R
C
t
I
I
I
I
I
= 1 A
-
rr
F
F
F
F
F
= 8 A, dI /dt = 200 A/µs
-
F
t
t
= 8 A, dI /dt = 200 A/µs
50
30
500
30
-
a
F
= 8 A, dI /dt = 200 A/µs
-
b
F
Q
= 8 A, dI /dt = 200 A/µs
-
RR
F
C
V
= 10 V, I = 0 A
-
J
R
F
o
R
2.0
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µs, D = 2%).
F
I
= Instantaneous reverse current.
R
T
= Reverse recovery time at dI /dt = 100A/µs (See Figure 9), summation of t + t .
F a b
rr
t
t
= Time to reach peak reverse current at dI /dt = 100A/µs (See Figure 9).
F
a
b
= Time from peak I
RM
to projected zero crossing of I
based on a straight line from peak I
through 25% of I
(See Figure 9).
RM
RM
RM
Q
= Reverse recovery charge.
RR
C = Junction Capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
200
40
o
175 C
o
10
1
175 C
10
o
100 C
0.1
o
o
100 C
25 C
o
25 C
0.01
1
0.5
0.001
200
400
600
0
0.5
1
1.5
2
2.5
3
0
1000
800
V
, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
R
F
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
MUR8100E, RURP8100
Typical Performance Curves (Continued)
100
80
125
100
75
50
25
0
o
o
T
= 100 C, dI /dt = 200A/µs
C
F
T
= 25 C, dI /dt = 200A/µs
C
F
60
t
rr
t
rr
40
t
a
t
a
20
0
t
b
t
b
0.5
1
4
8
0.5
1
4
8
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
8
6
4
150
125
100
75
o
T
= 175 C, dI /dt = 200A/µs
F
C
DC
SQ. WAVE
t
rr
t
a
50
2
0
t
b
25
0
140
145
150
155
160
165
o
170
175
0.5
1
4
8
I , FORWARD CURRENT (A)
T
, CASE TEMPERATURE ( C)
F
C
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
100
80
60
40
20
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
3
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
MUR8100E, RURP8100
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
G
F
L
t
t CONTROL I
2 F
1 AND
DUT
CURRENT
SENSE
dI
F
t
rr
R
I
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 8. t TEST CIRCUIT
rr
FIGURE 9. t WAVEFORMS AND DEFINITIONS
rr
I = 1A
L = 40mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
R(AVL)
- V )]
DD
AVL
= IGBT (BV
R(AVL)
> DUT V )
R(AVL)
V
AVL
Q
1
CES
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
DD
I
V
Q
1
V
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
4
Mechanical Dimensions
Figure 12. TO-220 2L - TO-220, MOLDED, 2LD
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002.
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
www.fairchildsemi.com
5
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AX-CAP *
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CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
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Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
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ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2001 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. C1
6
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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