RURP860 [ONSEMI]
8A,600V,超快二极管;型号: | RURP860 |
厂家: | ONSEMI |
描述: | 8A,600V,超快二极管 二极管 |
文件: | 总8页 (文件大小:648K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MUR840, MUR860, RURP840, RURP860
Data Sheet
November 2013
Features
8 A, 400 V - 600 V, Ultrafast Diodes
• Ultrafast Recovery trr = 70 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 1.5 V (@ TC = 25°C)
• 400 V, 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
Description
The MUR840, MUR860, RURP840, RURP860 is an
ultrafast diode with low forward voltage drop. This device is
intended for use as freewheeling and clamping diodes in a
variety of switching power supplies and other power
switching applications. It is specially suited for use in
switching power supplies and industrial application.
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
Packaging
JEDEC TO-220AC
PART NUMBER
PACKAGE
TO-220AC-2L
TO-220AC-2L
TO-220AC-2L
TO-220AC-2L
BRAND
MUR840
ANODE
MUR840
CATHODE
RURP840
RURP840
MUR860
RURP860
CATHODE
(FLANGE)
MUR860
RURP860
NOTE: When ordering, use the entire part number.
Symbol
K
A
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
MUR840
MUR860
RURP840
RURP860
UNIT
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
400
400
8
600
600
600
8
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
o
(T = 155 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
16
16
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
100
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
75
20
75
20
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
STG
-65 to 175
-65 to 175
C
J
Maximum Lead Temperature for Soldering
o
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
300
260
C
L
o
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
PKG
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
1
www.fairchildsemi.com
RURP840, RURP860 Rev. C1
MUR840, MUR860, RURP840, RURP860
o
Electrical Specifications
T
= 25 C, Unless Otherwise Specified
C
MUR840, RURP840
MUR860, RURP860
SYMBOL
TEST CONDITION
= 8 A
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
V
I
I
V
F
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.3
1.0
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.2
-
F
o
= 8 A, T = 150 C
C
-
-
V
F
V
V
V
V
I
= 400 V
I
-
-
-
-
µA
µA
µA
µA
ns
R
R
= 600 V
100
-
R
R
R
o
= 400 V, T = 150 C
C
-
500
-
-
o
= 600 V, T = 150 C
C
-
-
500
60
70
-
= 1 A, dI /dt = 200 A/µs
t
-
60
70
-
-
F
F
rr
I
I
I
I
= 8 A, dI /dt = 200 A/µs
-
-
ns
F
F
F
F
F
= 8 A, dI /dt = 200 A/µs
t
32
21
195
25
-
32
21
195
25
-
ns
F
a
= 8 A, dI /dt = 200 A/µs
t
-
-
ns
F
b
= 8 A, dI /dt = 200 A/µs
Q
-
-
nC
pF
F
rr
V
= 10 V, I
=
A
0
C
J
-
-
R
F
o
R
2
2
C/W
θJC
DEFINITIONS
V
= Instantaneous forward voltage (pw = 300 µs, D = 2%).
F
I
= Instantaneous reverse current.
R
T
= Reverse recovery time (See Figure 9), summation of t + t .
a b
rr
t = Time to reach peak reverse current (See Figure 9).
a
t = Time from peak I
RM
to projected zero crossing of I
based on a straight line from peak I
through 25% of I
(See Figure 9).
RM
b
RM
RM
Q
= Reverse recovery charge.
rr
C = Junction Capacitance.
J
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
40
500
100
o
175 C
10
o
100 C
10
1
o
100 C
o
o
175 C
25 C
0.1
1
o
25 C
0.5
0.01
2.5
2
0.5
1
1.5
V , FORWARD VOLTAGE (V)
0
0
100
200
300
400
500
600
V
, REVERSE VOLTAGE (V)
F
R
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
2
www.fairchildsemi.com
RURP840, RURP860 Rev. C1
MUR840, MUR860, RURP840, RURP860
Typical Performance Curves (Continued)
100
80
60
40
20
0
60
50
40
30
20
10
0
o
o
T
= 100 C, dI /dt = 200A/µs
F
T
= 25 C, dI /dt = 200A/µs
F
C
C
t
rr
t
rr
t
a
t
t
a
t
b
b
0.5
1
4
8
0.5
1
4
8
I , FORWARD CURRENT (A)
I , FORWARD CURRENT (A)
F
F
FIGURE 3. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 4. t , t AND t CURVES vs FORWARD CURRENT
a
b
rr
a
b
125
100
75
50
25
0
8
6
4
2
0
o
T
= 175 C, dI /dt = 200A/µs
F
C
DC
t
rr
SQ. WAVE
t
a
t
b
140
145
150
155
160
165
o
170
175
0.5
1
4
8
T
, CASE TEMPERATURE ( C)
C
I , FORWARD CURRENT (A)
F
FIGURE 5. t , t AND t CURVES vs FORWARD CURRENT
rr
FIGURE 6. CURRENT DERATING CURVE
a
b
100
80
60
40
20
0
0
50
100
150
200
V
, REVERSE VOLTAGE (V)
R
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
3
www.fairchildsemi.com
RURP840, RURP860 Rev. C1
MUR840, MUR860, RURP840, RURP860
Test Circuits and Waveforms
V
AMPLITUDE AND
GE
R
CONTROL dI /dt
F
G
L
t
t CONTROL I
1 AND
2 F
dI
DUT
CURRENT
SENSE
F
t
rr
I
R
F
G
dt
t
t
b
+
a
0
V
V
DD
GE
-
IGBT
t
1
0.25 I
RM
t
2
I
RM
FIGURE 8. t TEST CIRCUIT
rr
FIGURE 9. t WAVEFORMS AND DEFINITIONS
rr
I = 1A
L = 40mH
R < 0.1Ω
2
E
= 1/2LI [V
/(V
R(AVL)
- V )]
DD
AVL
= IGBT (BV
R(AVL)
V
AVL
Q
> DUT V
)
1
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
I
I
L
L
DD
Q
1
I
V
V
DD
DUT
-
t
t
t
2
t
0
1
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
4
www.fairchildsemi.com
RURP840, RURP860 Rev. C1
Mechanical Dimensions
Figure 12. TO-220 2L - TO-220, MOLDED, 2LD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002.
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
www.fairchildsemi.com
4
RURP840, RURP860 Rev. C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2001 Fairchild Semiconductor Corporation
MUR840, MUR860,
7
www.fairchildsemi.com
RURP840, RURP860 Rev. C1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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