S1J [ONSEMI]
1.0A通用整流器;
| 型号： | S1J |
| 厂家： | 
ONSEMI |
| 描述： | 1.0A通用整流器 IOT 光电二极管 |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
General-Purpose Rectifiers
S1A - S1M
2
1
Anode
Cathode
Description
In the world of commodity rectifiers, onsemi S1 family of 1 A,
P−I−N, SMA rectifiers stand out for their optimized low leakage, low
capacitance, and fast response time. This was achieved while
1
maintaining the industry standard V max of 1.1 V at 1 A and a 30 A
F
surge rating. In today’s world, where system power efficiency is a
critical differentiating feature, these advantages can be leveraged to
support those higher efficiency goals.
2
SMA
CASE 403AE
Features
• 1 AI
Current Rating
• Glass Passivated
F(AV)
MARKING DIAGRAM
• Low Leakage:
♦ 1 mA Maximum at 25°C
♦ 50 mA Maximum at 125°C
• Fast Response: 1.8 ms (Typical)
ON
ZXYY
DDDD
• 30 A Surge Rating
• 50 V to 1000 V Reverse Voltage Ratings
• 6.6 pF Typical Capacitance
• UL Certified, UL #E258596
Z
X
= Assembly Plant Code
= Last Digit of Year of Manufacture
= Weekly Code of Manufacture
= Specific Device Code
YY
DDDD
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ORDERING INFORMATION
†
Part Number
S1A
Device Code Marking
Package
Shipping
S1A
S1B
S1D
S1G
S1J
DO−214AC (SMA)
(Pb−Free)
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
7500 / Tape & Reel
S1B
S1D
S1G
S1J
S1K
S1K
S1M
S1M
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
August, 2021 − Rev. 3
S1M/D
S1A − S1M
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted) (Note 1)
A
Value
S1G
400
S1A
S1B
S1D
S1J
S1K
S1M
Symbol
Parameter
Unit
V
V
RRM
Maximum Repetitive Reverse Voltage
50
100
200
600
800
1000
I
Average Rectified Forward Current at
A
1.0
A
F(AV)
T = 100°C
I
Non−Repetitive Peak Forward Surge
Current 8.3 ms Single Half−Sine−Wave
30
A
FSM
T
Storage Temperature Range
−55 to +150
−55 to +150
°C
°C
STG
T
J
Operating Junction Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of any semiconductor device maybe impaired.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1)
A
Symbol
Characteristic
Value
1.4
Unit
W
P
D
Power Dissipation
R
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Ambient (Note 3)
85
°C/W
°C/W
°C/W
q
q
JA
JA
R
170
25
Ψ
Junction−Lead Thermal Characteristics (Note 3)
JL
2
2. Device mounted on FR−4 PCB, land pattern size: 25 mm (5 x 5 mm).
2
3. Device mounted on FR−4 PCB, land pattern size: 4.6375 mm (2.65 x 1.75 mm).
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Forward Voltage
Conditions
I = 1.0 A
Min
−
Typ
−
Max
1.1
−
Unit
V
F
V
F
t
rr
Reverse Recovery Time
I = 0.5 A, I = 1.0 A
−
1.8
ms
F
rr
R
I
= 0.25 A
I
Reverse Current at Rated V
T = 25°C
−
−
−
−
−
1.0
50
−
mA
R
R
A
TA = 125°C
= 4.0 V, f = 1.0 MHz
C
Junction Capacitance
V
R
6.6
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
S1A − S1M
TYPICAL PERFORMANCE CHARACTERISTICS
2
1
0
100
10
1
0.1
0.01
0.6
0.8
1
1.4
1.6
1.8
1.2
0
25
50
75
100 125
150
175
V , Forward Voltage (°C)
F
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
100
10
1
30
25
20
15
10
5
8.3 ms Single Half Sine−Wave
JEDEC Method
T = 125°C
J
T = 75°C
J
0.1
0.01
T = 25°C
J
0.001
0
1
2
5
10
20
50
100
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60 Hz
Figure 4. Reverse Current vs. Reverse Voltage
Figure 3. Non−Repetitive Surge Current
100
50
100
50
T = 25°C
J
f = 1.0 MHz
Vsig = 50 mV p−p
10
5
10
5
Units Mounted On
20” x 20” (5.4 mm2) + 0.5 mil
inches (0.013 mm)
Thick Copper Land Areas
1
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
Pulse Duration (s)
V , Reverse Voltage (V)
R
Figure 5. Total Capacitance
Figure 6. Thermal Impedance Characteristics
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMA
CASE 403AE
ISSUE O
DATE 31 AUG 2016
5.60
4.80
M
B
B
0.13
B
C
B
A
2.65
2.95
2.50
1.65
1.20
1.75
4.30
4.75
4.00
B
A
LAND PATTERN RECOMMENDATION
TOP VIEW
2.50 MAX
A
2.20
1.90
NOTES:
A. EXCEPT WHERE NOTED, CONFORMS
TO JEDEC DO214 VARIATION AC.
0.30
0.05
B
DOES NOT COMPLY JEDEC STANDARD
VALUE.
0.203
0.050
B
C
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS.
E. DIMENSIONS AND TOLERANCE AS
PER ASME Y14.5−2009.
E. LAND PATTERN STD. DIOM5025X231M
2.05
1.95
M
0.13
C
B
A
SIDE VIEW
8 °
0 °
R0.15 4X
GAGE PLANE
0.45
0.41
0.15
1.52
0.75
8 °
0 °
DETAIL A
SCALE 20 : 1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13440G
SMA
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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