S2A [ONSEMI]
通用整流器(玻璃钝化);型号: | S2A |
厂家: | ONSEMI |
描述: | 通用整流器(玻璃钝化) 开关 光电二极管 |
文件: | 总5页 (文件大小:250K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
General-Purpose Rectifiers
(Glass Passivated)
S2A-S2M
Description
The S2 family of devices are general−purpose 2 A rated rectifiers
with voltage ratings ranging from 50 to 1000 V. They are implemented
in traditional SMB packages and are well known to the industry. For
advanced or special requirements, please contact an ON Semiconductor
representative.
www.onsemi.com
Features
• High−Current Capability, 2 A Rated
• Fast Response: 2 ms T
rr
• Low−Forward Voltage Drop, 1.15 V V Max at 2 A
F
SMB
CASE 403AF
2
• High−Surge Current Capability, 50 A s I
FSM
• Glass Passivated Junction
• UL Certified, UL #E258596
MARKING DIAGRAM
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
$Y&Z&3
S2X
Applications
• Power Supplies
• AC to DC Rectification
• Bypass Diodes
$Y
&Z
&3
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Specific Device Code
X = A−M
S2X
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Value
S2A
S2B
S2D
S2G
S2J
S2K
S2M
Symbol
Parameter
Unit
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
V
RRM
Maximum
50
100
200
400
600
800 1000
V
Repetitive
Reverse Voltage
I
Average Rectified
Forward Current
2.0
50
A
A
F(AV)
at T = 100°C
A
I
Non−Repetitive
Peak Forward
Surge Current
8.3 ms Single
Half−Sine Wave
FSM
T
Storage
Temperature
Range
−65 to +150
−65 to +150
°C
°C
STG
T
J
Operating
Junction
Temperature
Range
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
April, 2020 − Rev. 2
S2M/D
S2A−S2M
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
Unit
W
PD
Power Dissipation
Thermal Resistance, Junction to Ambient (Note 1)
2.35
°C/W
53
R
q
JA
1. Device is mounted on FR−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Value
S2A S2B S2D S2G S2J S2K S2M
Symbol
Parameter
Conditions
I = 2.0 A
Unit
V
V
F
Maximum Forward Voltage
1.15
2.0
F
t
rr
Typical Reverse−Recovery Time I = 0.5 A, I = 1.0 A,
ms
F
R
I = 0.25 A
rr
I
Maximum Reverse Current at
Rated V
1.0
125
30
T = 25_C
A
mA
R
A
R
T = 125_C
C
Typical Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
pF
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
S2A, NRVS2A*
S2B, NRVS2B*
S2D, NRVS2D*
S2G, NRVS2G*
S2J, NRVS2J*
S2K, NRVS2K*
S2M, NRVS2M*
Marking
S2A
Package
Shipping
SMB
(Pb−Free)
3000 / Tape & Reel
S2B
S2D
S2G
S2J
S2K
S2M
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
2
S2A−S2M
TYPICAL PERFORMANCE CHARACTERISTICS
2.0
1.5
1.0
0.5
0
50
40
30
20
Resistive or Inductive Load
P.C.B. Mounted
8.0 × 8.0 mm
10
0
Copper Pad Areas
0
25
50
75
100
125
150
175
1
2
5
10
20
50
100
Ambient Temperature [5C]
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Non−Repetitive Surge Current
10
10
1
T
= 125°C
= 100°C
A
1
T
A
0.1
0.1
0.01
T
= 25°C
A
T
A
= 25°C
Pulse Width = 300 ms
2% Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
120
140
Forward Voltage, V [V]
Percent of Rated Peak Reverse Voltage [%]
F
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs. Reverse Voltage
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
Reverse Voltage, V [V]
R
Figure 5. Total Capacitance
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMB
CASE 403AF
ISSUE O
DATE 31 AUG 2016
5.60
5.08
M
B
B
0.13
C B A
2.50
3.95
3.30
2.20
1.91
B
2.20
4.70
4.75
4.05
B
LAND PATTERN RECOMMENDATION
A
8°
0°
2.65 MAX
A
R0.15 4X
GAUGE
PLANE
2.45
1.90
0.45
0.41
0.15
0.30
0.05
0.203
0.050
8°
0 −
B
C
2.15
1.65
1.60
0.75
M
0.13
C B A
DETAIL A
SCALE 20 : 1
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
JEDEC DO214 VARIATION AA.
B
DOES NOT COMPLY JEDEC STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−1994.
F. LAND PATTERN STD. DIOM5336X240M.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13441G
SMB
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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