SB007-03Q-TL-E [ONSEMI]
70 mA, 30 V, Schottky Barrier Diode, Low IR, Single MCP;
| 型号： | SB007-03Q-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | 70 mA, 30 V, Schottky Barrier Diode, Low IR, Single MCP |
| 文件： | 总5页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN2939B
SB007-03Q
Schottky Barrier Diode
30V, 70mA, Low IR, Single MCP
http://onsemi.com
Applications
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
Low forward voltage (V max=0.55V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Fast reverse recovery time (t max=10ns)
rr
F
•
Small-sized package permitting SB007-03Q applied sets to be compact and slim
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
30
35
70
2
RRM
V
V
RSM
I
I
mA
A
O
Surge Forward Current
50Hz sine wave, 1 cycle
FSM
Junction Temperature
Tj
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: MCP
7023A-005
• JEITA, JEDEC
: SC-70, SOT-323
•
Minimum Packing Quantity : 3,000 pcs./reel
SB007-03Q-TL-E
2.0
0.15
Packing Type: TL
Marking
3
0 to 0.08
LOT No.
G
LOT No.
1
2
TL
0.65
0.3
Electrical Connection
1 : Anode
3
2 : No Contact
3 : Cathode
MCP
1
2
Semiconductor Components Industries, LLC, 2013
September, 2013
71812 TKIM/62098HA(KT)/D1096 GI/D288TA, TS No.2939-1/5
SB007-03Q
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Reverse Voltage
V
I =20
A
30
V
V
μ
R
R
Forward Voltage
V
F
I =70mA
F
0.55
Reverse Current
I
R
V =15V
R
5
A
μ
Interterminal Capacitance
Reverse Recovery Time
C
V =10V, f=1MHz
3.0
pF
ns
R
t
I =I =10mA, See specified Test Circuit.
F R
10
rr
t
Test Circuit
rr
Duty≤10%
50Ω
100Ω
10Ω
10μs
5V
t
rr
Ordering Information
Device
Package
MCP
Shipping
memo
SB007-03Q-TL-E
3,000pcs./reel
Pb Free
I
-- V
I
R
-- V
R
F
F
2
1000
5
100
2
7
5
100
5
3
2
2
10
5
10
7
2
1.0
5
5
3
2
2
0.1
5
1.0
2
0.01
0
7
5
0
0.2
0.4
0.6
0.8
1.0
1.2
ID00244
5
10
15
20
25
30
35
ID00245
Forward Voltage, V -- V
F
Reverse Voltage, V -- V
R
C -- V
I
-- t
R
FSM
2
2.8
2.4
2.0
1.6
1.2
0.8
f=1MHz
Current waveform 50Hz sine wave
IS
10
7
5
20ms
t
3
2
1.0
7
5
0.4
0
3
7
2
3
5
7
2
3
5
7
1.0
2
3
5
7
2
3
5
7
2
3
5
0.01
0.1
1.0
10
Reverse Voltage, V -- V
ID00246
Time, t -- s
ID00247
R
No.2939-2/5
SB007-03Q
Embossed Taping Specification
SB007-03Q-TL-E
No.2939-3/5
SB007-03Q
Outline Drawing
Land Pattern Example
SB007-03Q-TL-E
Mass (g) Unit
Unit: mm
0.006
mm
* For reference
0.7
0.65 0.65
No.2939-4/5
SB007-03Q
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PS No.2939-5/5
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