SB05-03C-TB-E [ONSEMI]
500 mA, 30 V, Schottky Barrier Diode, Low IR, Single CP;
| 型号： | SB05-03C-TB-E |
| 厂家： | 
ONSEMI |
| 描述： | 500 mA, 30 V, Schottky Barrier Diode, Low IR, Single CP |
| 文件： | 总5页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN3614B
SB05-03C
Schottky Barrier Diode
30V, 0.5A, Low IR, Single CP
http://onsemi.com
Applications
•
Universal-use rectifier
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
•
Low forward voltage (V max=0.55V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Small-sized package, permitting applied sets to be compact and slim
Fast reverse recovery time (t max=10ns)
rr
F
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
30
35
RRM
V
V
RSM
I
I
500
5
mA
A
O
Surge Forward Current
50Hz sine wave, 1 cycle
FSM
Junction Temperature
Tj
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CP
7013A-004
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
•
Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.1
SB05-03C-TB-E
3
Packing Type: TB
Marking
Q
1
2
TB
0.95
0.4
1 : Anode
Electrical Connection
2 : No Contact
3 : Cathode
3
CP
1
2
Semiconductor Components Industries, LLC, 2013
September, 2013
71812 TKIM/61197GI/N120MH (KOTO) No.3614-1/5
SB05-03C
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Reverse Voltage
V
I =150
A
30
V
V
μ
R
R
Forward Voltage
V
F
I =500mA
F
0.55
Reverse Current
I
R
V =15V
R
30
A
μ
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
V =10V, f=1MHz
16
pF
ns
R
t
I =I =100mA, See specified Test Circuit.
10
rr
Rth(j-a)
F
R
560
°C / W
t
Test Circuit
rr
Duty≤10%
10Ω
100Ω
50Ω
10μs
5V
t
rr
Ordering Information
Device
Package
CP
Shipping
memo
SB05-03C-TB-E
3,000pcs./reel
Pb Free
I
-- V
I
R
-- V
R
F
F
2
2
1000
5
1.0
7
2
100
5
5
3
2
2
10
5
0.1
7
5
2
3
2
1.0
5
2
0.01
7
0.1
5
5
2
0
3
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
ID00331
5
10
15
20
25
30
35
Forward Voltage, V -- V
F
Reverse Voltage, V -- V
R
ID00332
I
-- t
C -- V
S
R
2
7
6
5
4
3
2
f=1MHz
Current waveform 50Hz sine wave
100
IS
7
5
20ms
t
3
2
10
7
5
1
0
3
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
2
3
1.0
10
0.01
0.1
Reverse Voltage, V -- V
ID00333
Time, t -- s
ID00334
R
No.3614-2/5
SB05-03C
Embossed Taping Specification
SB05-03C-TB-E
No.3614-3/5
SB05-03C
Outline Drawing
Land Pattern Example
SB05-03C-TB-E
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.8
0.95
0.95
No.3614-4/5
SB05-03C
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PS No.3614-5/5
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