SB05W05C-TB-E [ONSEMI]
肖特基势垒整流器,50V,0.5A,低 IR,单片双 CP 共阴极;型号: | SB05W05C-TB-E |
厂家: | ONSEMI |
描述: | 肖特基势垒整流器,50V,0.5A,低 IR,单片双 CP 共阴极 光电二极管 |
文件: | 总5页 (文件大小:285K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : EN3611B
SB05W05C
Schottky Barrier Diode
50V, 0.5A, Low IR, Monolithic Dual CP Common Cathode
http://onsemi.com
Applications
•
Universal-use rectifier
•
High frequency rectification (switching regulators, converters, choppers)
Features
•
•
•
•
•
Low forward voltage (V max=0.55V)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Small-sized package, permitting applied sets to be compact and slim
Fast reverse recovery time (t max=10ns)
rr
F
Specifications
at Ta=25°C (Value per element)
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
50
55
RRM
V
V
RSM
I
I
500
5
mA
A
O
Surge Forward Current
50Hz sine wave, 1 cycle
FSM
Junction Temperature
Tj
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: CP
7013A-006
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
•
Minimum Packing Quantity : 3,000 pcs./reel
2.9
0.1
SB05W05C-TB-E
3
Packing Type: TB
Marking
P
1
2
TB
0.95
0.4
1 : Anode
2 : Anode
3 : Cathode
Electrical Connection
3
CP
1
2
Semiconductor Components Industries, LLC, 2013
September, 2013
71812 TKIM/71598HA (KT)/12097GI/N120MH, JK (KOTO) 8-6450 No.3611-1/5
SB05W05C
at Ta=25°C (Value per element)
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Reverse Voltage
V
I =200
A
50
V
V
μ
R
R
Forward Voltage
V
F
I =500mA
F
0.55
Reverse Current
I
R
V =25V
R
50
A
μ
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
V =10V, f=1MHz
24
pF
ns
R
t
I =I =100mA, See specified Test Circuit.
F R
10
rr
Rth(j-a)
420
°C / W
t
Test Circuit
rr
Duty≤10%
10Ω
100Ω
50Ω
10μs
5V
t
rr
Ordering Information
Device
Package
Shipping
memo
SB05W05C-TB-E
CP
3,000pcs./reel
Pb Free
I
-- V
I -- V
R R
F
F
2
3
2
1000
1.0
7
5
3
2
5
3
2
100
5
3
2
0.1
7
10
5
3
2
5
3
2
1.0
5
3
2
0.01
7
0.1
5
3
5
3
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
ID00319
0
10
20
30
40
50
60
Forward Voltage, V -- V
F
Reverse Voltage, V -- V
R
ID00320
I
-- t
C -- V
S
R
2
7
6
5
4
3
2
f=1MHz
Current waveform 50Hz sine wave
100
7
IS
20ms
t
5
3
2
10
7
1
0
5
3
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
1.0
2
3
1.0
10
100
ID00321
0.01
0.1
Reverse Voltage, V -- V
Time, t -- s
ID00322
R
No.3611-2/5
SB05W05C
Embossed Taping Specification
SB05W05C-TB-E
No.3611-3/5
SB05W05C
Outline Drawing
Land Pattern Example
SB05W05C-TB-E
Mass (g) Unit
Unit: mm
0.013
mm
* For reference
0.8
0.95
0.95
No.3611-4/5
SB05W05C
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
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harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
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PS No.3611-5/5
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