SB2003M-TL-W [ONSEMI]
肖特基势垒整流器，30V，2A，低 IR，单 MCPH6;
| 型号： | SB2003M-TL-W |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒整流器，30V，2A，低 IR，单 MCPH6 光电二极管 |
| 文件： | 总4页 (文件大小：1035K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8371C
SB2003M
Schottky Barrier Diode
30V, 2A, Low I , Single MCPH6
R
http://onsemi.com
Applications
•
ꢀ Highꢀfrequencyꢀrectificationꢀ(switchingꢀregulators,ꢀconverters,ꢀchoppers)
Features
•
•
•
•
ꢀ Lowꢀswitchingꢀnoiseꢀ ꢀ
ꢀ Lowꢀleakageꢀcurrentꢀandꢀhighꢀreliabilityꢀdueꢀtoꢀhighlyꢀreliableꢀplanarꢀstructure
ꢀ Ultrasmallꢀpackageꢀpermittingꢀappliedꢀsetsꢀtoꢀbeꢀsmallꢀandꢀslimꢀ(mountingꢀheightꢀ0.85mm)
Halogen free compliance
Specifications
at Ta=25 C
Absolute Maximum Ratings
°
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
V
30
35
RRM
RSM
V
I
I
2.0
10
A
O
Surge Forward Current
50Hz sine wave, 1 cycle
A
FSM
Junction Temperature
Tj
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unitꢀ:ꢀmmꢀ(typ)
Product & Package Information
•ꢀPackageꢀ
:ꢀMCPH6
7022A-014
•ꢀJEITA,ꢀJEDECꢀ
:ꢀSC-88,ꢀSC-70-6,ꢀSOT-363
•ꢀMinimumꢀPackingꢀQuantityꢀ :ꢀ3,000ꢀpcs./reel
SB2003M-TL-E
SB2003M-TL-W
2.0
0.15
Packing Type : TL
Marking
SE
6
5
4
3
0 to 0.02
TL
1
2
0.65
0.3
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Cathode
6 : Cathode
Electrical Connection
6
5
4
1
2
3
4
MCPH6
6
5
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
61714HK TC-00002878/N0712TKIM/62310TKIM/62405MSIM SB No.8371-1/4
SB2003M
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Reverse Voltage
Symbol
Conditions
Unit
min
max
V
V
I
I
=0.2mA
R
30
V
V
V
R
I =1.0A
F
0.40
0.45
0.45
Forward Voltage
F
I =2.0A
F
0.50
30
Reverse Current
V
=15V
A
µ
R
R
R
Interterminal Capacitance
Reverse Recovery Time
C
V
=10V, f=1MHz
75
pF
ns
t
I =I =100mA, See specified Test Circuit.
20
rr
F R
When mounted in Cu-foiled area of
Rth(j-a)1
Rth(j-a)2
93.4
71.4
°C / W
°C / W
1.44mm2 0.03mm on glass epoxy substrate
Thermal Resistance
×
When mounted on ceramic substrate (500mm2 0.8mm)
×
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
t
Test Cicuit
rr
Duty≤10%
50Ω
100Ω
10Ω
10µs
--5V
t
rr
Ordering Information
Device
Package
MCPH6
MCPH6
Shipping
memo
Pb-Free
SB2003M-TL-E
3,000pcs./reel
3,000pcs./reel
SB2003M-TL-W
Pb-Free and Halogen Free
I
-- V
I
-- V
R
F
F
R
7
5
10
7
5
3
2
3
2
1.0
7
5
3
2
0.1
1.0
7
7
5
3
2
5
0.01
7
5
3
2
3
2
0.001
7
5
3
2
0.1
C
C
C
C
C
C
°
°
C
°
°
°
°
°
7
5
5
0
0.0001
7
50
25
7
5
3
2
100
-25
-
a=125
T
3
2
0.00001
7
5
3
2
0.01
0.000001
0
0
0.1
0.2
0.3
0.4
0.5
0.6
IT08588
5
10
15
20
25
30
35
IT08589
Forward Voltage, V -- V
Reverse Voltage, V -- V
R
F
No.8371-2/4
SB2003M
C -- V
P (AV) -- I
F
R
O
1.4
1.2
1.0
0.8
0.6
0.4
7
5
Rectangular
wave
(1) (2)(4)(3)
θ
3
2
360°
Sine wave
180°
360°
100
7
5
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.2
0
3
2
0
0.5
1.0
1.5
2.0
2.5
IT08591
2
3
5
7
2
3
5
7
10
2
3
5 7
0.1
1.0
Average Output Current, I -- A
O
Reverse Voltage, V -- V
IT08590
R
I
-- t
FSM
14
12
10
8
Current waveform 50Hz sine wave
IS
20ms
t
6
4
2
0
7
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
Time, t -- s
ID00435
No.8371-3/4
SB2003M
Outline Drawing
Land Pattern Example
ꢀ SB2003M-TL-E,ꢀSB2003M-TL-W
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
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PSꢀNo.8371-4/4
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