SBAV70LT1G [ONSEMI]
Dual Switching Diode Common Cathode;
| 型号： | SBAV70LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Dual Switching Diode Common Cathode 光电二极管 |
| 文件： | 总4页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV70L, SBAV70L
Dual Switching Diode
Common Cathode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
www.onsemi.com
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
SOT−23 (TO−236)
CASE 318
Rating
Symbol
Value
100
200
500
1.5
Unit
V
Reverse Voltage
Forward Current
V
R
STYLE 9
I
F
mA
mA
A
ANODE
1
Peak Forward Surge Current
I
FM(surge)
3
CATHODE
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
2
ANODE
Non−Repetitive Peak Forward Current
I
A
FSM
(Square Wave, T = 25°C prior to surge)
t = 1 ms
J
MARKING DIAGRAM
31
16
10
4.5
2.5
1.0
t = 10 ms
t = 100 ms
t = 1 ms
t = 10 ms
t = 100 ms
A4 M G
G
1
THERMAL CHARACTERISTICS
Characteristic
A4 = Device Code
Symbol
Max
Unit
M
= Date Code*
G
= Pb−Free Package
Total Device Dissipation FR−5 Board
(Note 1)
P
D
225
mW
(Note: Microdot may be in either location)
T = 25°C
Derate above 25°C
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
mW/°C
°C/W
Thermal Resistance,
Junction−to−Ambient
R
556
q
JA
ORDERING INFORMATION
†
Total Device Dissipation
Alumina Substrate,
P
300
mW
Device
Package
Shipping
D
BAV70LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
(Note 2) T = 25°C
A
2.4
mW/°C
°C/W
Derate above 25°C
SBAV70LT1G
BAV70LT3G
SBAV70LT3G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Thermal Resistance,
Junction−to−Ambient
R
417
q
JA
SOT−23 10,000 / Tape & Reel
(Pb−Free)
Junction and Storage Temperature
T , T
J
−55 to
+150
°C
stg
SOT−23 10,000 / Tape & Reel
(Pb−Free)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 12
BAV70LT1/D
BAV70L, SBAV70L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Each Diode)
A
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(I = 100 mA)
V
(BR)
V
100
−
(BR)
Reverse Voltage Leakage Current (Note 3)
I
R
mA
(V = 25 V, T = 150°C)
−
−
−
60
1.0
100
R
J
(V = 100 V)
R
(V = 70 V, T = 150°C)
R
J
Diode Capacitance
(V = 0 V, f = 1.0 MHz)
R
C
V
pF
D
−
1.5
Forward Voltage
mV
F
(I = 1.0 mA)
−
−
−
−
715
855
1000
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
1250
Reverse Recovery Time
R = 100 W
t
rr
ns
L
(I = I = 10 mA, I = 1.0 mA) (Figure 1)
−
6.0
F
R
R(REC)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. For each individual diode while second diode is unbiased.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BAV70L, SBAV70L
Curves Applicable to Each Anode
10
100
10
T = 85°C
A
T = 150°C
A
T = 125°C
T = 125°C
A
A
1.0
0.1
T = 55°C
A
T = 85°C
A
T = 25°C
A
1
T = 55°C
A
T = 150°C
A
T = −40°C
A
0.01
0.1
0.01
T = 25°C
A
T = −55°C
A
0.001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
10
20
30
40
50
60
70
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
F
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.6
0.58
0.56
0.54
0.52
0.5
0.48
0
1
2
3
4
5
6
7
8
V , REVERSE VOLTAGE (V)
R
Figure 4. Capacitance
www.onsemi.com
3
BAV70L, SBAV70L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
0.25
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
T
H
E
E
1
2
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.14
2.90
1.30
1.90
0.43
0.54
2.40
−−−
MAX
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
L
1.11
0.10
0.50
0.20
3.04
1.40
2.04
0.55
0.69
2.64
10°
3X
b
L1
VIEW C
e
TOP VIEW
A
H
E
T
c
A1
SEE VIEW C
SIDE VIEW
STYLE 9:
PIN 1. ANODE
END VIEW
2. ANODE
3. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
0.90
3X
0.95
0.80
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
BAV70LT1/D
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