SBC807-16LT3G [ONSEMI]
PNP 双极晶体管;
ONSEMI 
BC807−16LT1,
BC807−25LT1, BC807−40LT1
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
COLLECTOR
3
• Pb−Free Packages are Available
1
BASE
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Symbol
Value
−45
Unit
V
2
EMITTER
V
CEO
V
CBO
V
EBO
−50
V
−5.0
−500
V
MARKING
DIAGRAM
Collector Current − Continuous
I
C
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
3
SOT−23
CASE 318
STYLE 6
xxxD
1
2
1
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
xxx
D
= 5A (BC807−16LT1)
5B1 (BC807−25LT1)
5C (BC807−40LT1)
= Date Code
Total Device Dissipation FR−5 Board,
(Note 1) T = 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
A
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
R
556
°C/W
q
JA
P
D
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−55 to
+150
stg
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 5
BC807−16LT1/D
BC807−16LT1, BC807−25LT1, BC807−40LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
−45
−50
−5.0
−
−
−
−
−
−
V
V
V
(BR)CEO
(I = −10 mA)
C
Collector−Emitter Breakdown Voltage
V
(BR)CES
(V = 0, I = −10 mA)
EB
C
Emitter−Base Breakdown Voltage
V
(BR)EBO
(I = −1.0 mA)
E
Collector Cutoff Current
I
CBO
(V = −20 V)
(V = −20 V, T = 150°C)
CB
−
−
−
−
−100
−5.0
nA
mA
CB
J
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −100 mA, V = −1.0 V)
BC807−16
BC807−25
BC807−40
100
160
250
40
−
−
−
−
250
400
600
−
C
CE
(I = −500 mA, V = −1.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = −500 mA, I = −50 mA)
V
−
−
−0.7
V
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = −500 mA, I = −1.0 V)
V
BE(on)
−
−
−1.2
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
10
−0.7
obo
(V = −10 V, f = 1.0 MHz)
CB
DEVICE ORDERING INFORMATION
Device
†
Package
SOT−23
SOT−23
SOT−23
Shipping
BC807−16LT1
3,000 Tape & Reel
10,000 Tape & Reel
BC807−16LT3
BC807−25LT1
3,000 Tape & Reel
10,000 Tape & Reel
3,000 Tape & Reel
BC807−25LT1G
SOT−23
(Pb−Free)
BC807−25LT3
BC807−40LT1
BC807−40LT1G
SOT−23
SOT−23
SOT−23
(Pb−Free)
BC807−40LT3
SOT−23
10,000 Tape & Reel
BC807−40LT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BC807−16LT1, BC807−25LT1, BC807−40LT1
1000
V
= −1.0 V
CE
T = 25°C
A
100
10
−0.1
−1.0
−10
−100
−1000
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
−1.0
−0.8
−0.6
−0.4
−1.0
T = 25°C
A
T = 25°C
J
V
@ I /I = 10
C B
BE(sat)
−0.8
−0.6
−0.4
−0.2
0
V
BE(on)
@ V = −1.0 V
CE
I
=
C
−500 mA
I
C
= −300 mA
−0.2
0
I
C
= −100 mA
V
@ I /I = 10
C B
CE(sat)
I
C
= −10 mA
−0.01
−0.1
−1.0
I , BASE CURRENT (mA)
−10
−100
−1.0
−10
−100
−1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 2. Saturation Region
Figure 3. “On” Voltages
100
+1.0
0
q
for V
CE(sat)
VC
C
ib
10
−1.0
−2.0
C
ob
q
for V
BE
VB
1.0
−0.1
−1.0
−10
−100
−1000
−1.0
−10
−100
I , COLLECTOR CURRENT
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Temperature Coefficients
Figure 5. Capacitances
http://onsemi.com
3
BC807−16LT1, BC807−25LT1, BC807−40LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−09
ISSUE AI
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.
3
B
S
1
2
INCHES
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
0.1102
MAX
0.1197
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
V
G
C
K
L
S
J
V
H
K
D
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
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Order Literature: http://www.onsemi.com/litorder
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For additional information, please contact your
local Sales Representative.
BC807−16LT1/D
相关型号：
SBC807-25LT1
500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ROCHESTER
SBC807-40LT3
500mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
ONSEMI
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