SBS805-TL [ONSEMI]
ARRAY OF INDEPENDENT DIODES,SOT-25;型号: | SBS805-TL |
厂家: | ONSEMI |
描述: | ARRAY OF INDEPENDENT DIODES,SOT-25 测试 |
文件: | 总3页 (文件大小:28K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENN6944
Schottky Barrier Diode
SBS805-TL
30V, 1A Rectifier
Applications
Package Dimensions
unit : mm
1294
•
High frequency rectification (switching regulators,
converters, choppers).
[SBS805-TL]
Features
2.9
4
0.15
•
Low forward voltage (I =0.5A, V max=0.40V)
F
F
5
3
2
(I =1.0A, V max=0.47V).
F
F
0.05
• Short reverse recovery time(t max.=15ns).
• Composite type with 2 low V SBDs in one package,
F
facilitating high-density mounting.
• The SBS805-TL is composed of 2 chips that are
equivalent to the SBS005.
rr
1
0.95
0.4
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
Electrical Connection
5
4
3
0.4
SANYO : CPH5
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
1
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Symbol
Conditions
Ratings
Unit
V
30
V
V
RRM
RSM
V
30
1
I
O
A
I
50Hz sine wave, 1 cycle
10
A
FSM
Tj
Junction Temperature
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Marking : SD
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31901GI IM No.6944-1/3
SBS805-TL
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Reverse Voltage
Symbol
Conditions
Unit
min
30
max
V
I
=1mA
V
V
R
R
V 1
F
I =0.5A
F
0.35
0.42
0.40
Forward Voltage
V 2
F
I =1A
F
0.47
500
V
Reverse Current
I
V
V
=15V
R
R
µA
pF
ns
R
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
=10V, f=1MHz
35
t
rr
I =I =100mA, See specified Test Circuit.
Mounted on a ceramic board (600mm2✕0.8mm)
15
F R
Rth(j-a)
110
°C/W
t Test Circuit
rr
Duty≤10%
50Ω
100Ω
10Ω
10µs
5V
t
rr
I
-- V
I
-- V
R R
F
F
100
7
5
3
2
10
7
5
3
2
10
7
5
1.0
3
2
7
5
1.0
7
5
3
2
3
2
0.1
7
5
0.1
7
5
3
2
3
2
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
IT00627
0
5
10
15
20
25
30
Reverse Voltage, V -- V
IT00628
Forward Voltage, V -- V
R
F
P (AV) -- I
C -- V
F
O
R
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
f=1MHz
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
7
5
3
2
(3)
(4)
(2)
100
7
5
(1)
3
2
Rectangular wave
10
θ
360°
7
5
Sine wave
3
2
0.1
0
180°
360°
1.0
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT00629
2
3
5
7
2
3
5
7
10
100
Average Forward Current, I -- A
IT00630
Reverse Voltage, V -- V
O
R
No.6944-2/3
SBS805-TL
I
-- t
S
12
10
Current waveform 50Hz sine wave
Is
20ms
t
8
6
4
2
0
7
2
3
5
7
2
3
5
7
1.0
2
3
0.01
0.1
Time, t -- s
IT00631
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2001. Specifications and information herein are subject
to change without notice.
PS No.6944-3/3
相关型号:
SBS817-TL-E
Schottky Barrier Diode, 15V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode, SOT-383FL / EMH8, 3000-REEL
ONSEMI
SBS818-TL-E
Schottky Barrier Diode, 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode, SOT-383FL / EMH8, 3000-REEL
ONSEMI
©2020 ICPDF网 联系我们和版权申明