SBS822 [ONSEMI]
Schottky Barrier Diode;
ONSEMI 
Ordering number : ENA1504A
SBS822
Schottky Barrier Diode
20V, 1A, Low VF Dual MCPH5
http://onsemi.com
Applications
•
High frequency rectification (switching regulators, converters, choppers).
Features
•
Low forward voltage (I =0.5A, V max=0.39V) (I =1A, V max=0.46V).
F
F
F
F
•
•
•
Composite type with 2 low V SBDs in one package, facilitating high-density mounting.
Ultrasmall-size package permitting applied sets to be small and slim (Mounting height 0.85mm).
Halogen free compliance.
F
Specifications
(Value per element)
at Ta=25°C
Absolute Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Symbol
Conditions
Ratings
Unit
V
V
20
20
1
RRM
V
V
RSM
When mounted on ceramic substrate (1000mm2 0.8mm) Rectangular wave
A
×
I
I
O
Surge Forward Current
50Hz sine wave, 1 cycle
5
A
FSM
Junction Temperature
Tj
--55 to +125
--55 to +125
°C
°C
Storage Temperature
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
Device
Package
Shipping
note
7021A-001
MCPH5
SC-88A, SC-70-5, SOT-353
3,000
pcs./reel
SBS822-TL-H
Pb-Free
and
Halogen Free
MCPH5
SC-88A, SC-70-5, SOT-353
3,000
pcs./reel
SBS822-TL-W
SBS822-TL-H
SBS822-TL-W
2.0
0.15
5
4
3
Packing Type : TL
Marking
0 to 0.02
SJ
1
2
TL
0.65
0.3
Electrical Connection
1 : Anode
2 : No Contact
3 : Anode
5
4
1
2
3
4
4 : Cathode
5 : Cathode
MCPH5
5
1
2
3
Semiconductor Components Industries, LLC, 2013
July, 2013
70313 TKIM TC-00002926/62409SB TKIM TC-00002001 No. A1504-1/4
SBS822
at Ta=25°C (Value per element)
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Reverse Voltage
V
I =0.5mA
20
V
V
V
V
R
R
V 1
F
I =0.5A
F
0.34
0.37
0.41
0.39
Forward Voltage
V 2
F
I =0.7A
F
0.42
0.46
110
V 3
F
I =1A
F
Reverse Current
I
R
V =10V
R
A
μ
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
C
V =10V, f=1MHz
19
pF
ns
R
t
I =I =100mA, See specified Test Circuit.
10
rr
Rth(j-a)
F R
When mounted on ceramic substrate (1000mm2 0.8mm)
130
°C / W
×
t
Test Circuit
rr
Duty≤10%
50Ω
100Ω
10Ω
10μs
--5V
t
rr
I
F
-- V
I
R
-- V
F
R
1E+05
1E+04
1E+03
1E+02
1E+01
1E+00
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
1E-01
1E-02
0.001
0
0.1
0.2
0.3
0.4
0.5
IT14723
0
5
10
15
20
25
Forward Voltage, V -- V
Reverse Voltage, V -- V
IT14724
F
R
Ta -- I
C -- V
R
O
2
150
125
100
75
(1)Rectangular wave
(2)Rectangular wave
(3)Rectangular wave
(4)Sine wave
(5)DC
θ=60°
f=1MHz
θ
θ
=120
=180
°
°
100
θ=180°
7
5
3
2
50
25
0
(1) (2) (4) (3)
(5)
10
7
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2
3
5
7
2
3
5
7
2
3
1.0
10
Reverse Voltage, V -- V
IT14725
IT14726
Average Output Current, I -- A
R
O
No. A1504-2/4
SBS822
Outline Drawing
Land Pattern Example
SBS822-TL-H, SBS822-TL-W
Mass (g) Unit
0.008
Unit: mm
mm
* For reference
0.4
0.65 0.65
No. A1504-3/4
SBS822
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PS No. A1504-4/4
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