SCH1335-TL-H [ONSEMI]
P-Channel Power MOSFET, -12V, -2.5A, 112mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL;型号: | SCH1335-TL-H |
厂家: | ONSEMI |
描述: | P-Channel Power MOSFET, -12V, -2.5A, 112mΩ, Single SCH6, SOT-563 / SCH6, 5000-REEL |
文件: | 总7页 (文件大小:385K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1939A
SCH1335
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
12V, 2.5A, 112m , Single SCH6
Features
•
1.8V drive
•
Halogen free compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--12
Unit
V
V
DSS
V
±10
V
GSS
I
--2.5
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm)
--10
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
0.8
W
°C
°C
×
D
Tch
150
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: SCH6
7028-002
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
SCH1335-TL-H
1.6
0.2
Packing Type : TL
Marking
YL
0.2
6
5
4
TL
3
2
1
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Electrical Connection
1, 2, 5, 6
SCH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/33011PE TKIM TC-00002321 No. A1939-1/7
SCH1335
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--12
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I =--1mA, V =0V
D GS
(BR)DSS
I
V
=--12V, V =0V
--10
A
A
μ
DSS
DS GS
I
V
=±8V, V =0V
±10
μ
GSS
GS DS
V
(off)
|
V
=--6V, I =--1mA
--0.4
--1.3
V
GS
yfs
DS D
Forward Transfer Admittance
V
DS
=--6V, I =--1A
D
3.3
S
|
R
R
R
(on)1
(on)2
(on)3
I
=--1A, V =--4.5V
GS
86
125
185
270
90
112
175
285
m
Ω
Ω
Ω
DS
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=--0.5A, V =--2.5V
GS
m
m
I
D
=--0.2A, V =--1.8V
GS
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--6V, f=1MHz
pF
pF
ns
DS
72
t
t
t
t
(on)
6.5
21
d
r
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
33
ns
d
f
33
ns
Total Gate Charge
Qg
3.1
0.7
0.9
--0.84
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--6V, V =--4.5V, I =--2.5A
GS
DS
D
V
SD
I =--2.5A, V =0V
S GS
--1.2
Switching Time Test Circuit
V = --6V
DD
V
IN
0V
--4.5V
I
= --1A
D
V
IN
R =6Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
SCH1335
P. G
50Ω
S
Ordering Information
Device
Package
SCH6
Shipping
5,000pcs./reel
memo
SCH1335-TL-H
Pb Free and Halogen Free
No. A1939-2/7
SCH1335
I
D
-- V
DS
I
-- V
D GS
--2.5
--2.0
--1.5
--1.0
--3.0
--2.5
--2.0
--1.5
--1.0
Ta=25°C
V
= --6V
DS
--0.5
0
--0.5
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
IT16352
Drain-to-Source Voltage, V
DS
-- V
IT16351
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
400
350
300
250
200
150
100
250
200
150
100
Ta=25°C
I
= --0.2A
D
--0.5A
--1.0A
50
0
50
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--80 --60 --40 --20
0
20 40 60 80 100 120 140 160 180
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT16353
IT16354
| yfs | -- I
I
-- V
D
S SD
10
7
--10
7
V
= --6V
V
=0V
DS
GS
5
3
2
5
--1.0
3
2
7
5
3
2
1.0
7
--0.1
7
5
3
2
5
--0.01
3
2
7
5
3
2
0.1
--0.01
--0.001
2
3
5
7
2
3
5
7
2
3
5
7
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--0.1
--1.0
--10
Drain Current, I -- A
D
IT16355
Diode Forward Voltage, V -- V
SD
IT16356
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
100
1000
V
V
= --6V
f=1MHz
DD
= --4.5V
7
5
7
GS
5
3
2
3
2
t
f
10
100
t (on)
d
7
5
7
5
3
2
3
2
10
1.0
--0.1
2
3
5
7
2
3
5
7
0
--2
--4
--6
--8
--10
--12
IT16358
--1.0
--10
IT16357
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No. A1939-3/7
SCH1335
A S O
V
-- Qg
GS
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--100
V
I
= --6V
= --2.5A
7
DS
D
5
3
2
I
= --10A (PW≤10μs)
DP
--10
7
5
I = --2.5A
D
3
2
--1.0
7
5
3
2
Operation in this area
is limited by R (on).
--0.1
DS
7
5
Ta=25°C
Single pulse
3
2
--0.5
0
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT16359
2
3
5
7
2
3
5
7
2
3
5 7
--100
--1.0
--10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
DS
-- V
IT16360
P
-- Ta
D
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT16361
No. A1939-4/7
SCH1335
Taping Specification
SCH1335-TL-H
No. A1939-5/7
SCH1335
Outline Drawing
Land Pattern Example
SCH1335-TL-H
Mass (g) Unit
Unit: mm
0.004
mm
* For reference
0.3
0.5 0.5
No. A1939-6/7
SCH1335
Note on usage : Since the SCH1335 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1939-7/7
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