SCH1439-TL-H [ONSEMI]
Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, SOT-563 / SCH6, 5000-REEL;
| 型号： | SCH1439-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, 30V, 72mΩ, 3.5A, Single N-Channel, SOT-563 / SCH6, 5000-REEL |
| 文件： | 总5页 (文件大小：680K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCH1439
Power MOSFET
30V, 72mΩ, 3.5A, Single N-Channel
This low-profile high-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
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Features
Low On-Resistance
V
R
DS
(on) Max
I
DSS
D Max
3.5A
72mΩ@ 10V
110mΩ@ 4.5V
128mΩ@ 4V
4V drive
30V
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
ELECTRICAL CONNECTION
N-Channel
Typical Applications
Load Switch
Battery Switch
1, 2, 5, 6
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Symbol
Value
Unit
V
3
V
V
I
30
20
3.5
DSS
GSS
V
A
4
D
Drain Current (Pulse)
I
14
A
DP
PW 10s, duty cycle 1%
PACKING TYPE : TL
MARKING
Power Dissipation
When mounted on ceramic substrate
(900mm2 0.8mm)
P
1
W
D
ZQ
Junction Temperature
Tj
150
C
C
TL
Storage Temperature
Tstg
55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
Symbol
Value
Unit
R
JA
125
C/W
When mounted on ceramic substrate
(900mm2 0.8mm)
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. 2
1
Publication Order Number :
SCH1439/D
SCH1439
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2)
Value
typ
Parameter
Symbol
V(
Conditions
Unit
min
30
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
)
I =1mA, V =0V
V
A
A
V
BR DSS
D
GS
=30V, V =0V
I
I
V
1
DSS
GSS
DS
GS
DS
DS
GS
V
V
V
=16V, V =0V
DS
10
V
(th)
=10V, I =1mA
1.2
2.6
GS
FS
D
Forward Transconductance
g
=10V, I =1.5A
1.8
55
S
D
R
DS
R
DS
R
DS
(on)1
(on)2
(on)3
I =1.5A, V =10V
GS
72
110
128
m
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
D
Static Drain to Source On-State
Resistance
78
I =1A, V =4.5V
GS
D
91
I =1A, V =4V
D
GS
Input Capacitance
Ciss
280
60
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
DS
30
t (on)
d
5.8
8.0
21
t
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
9.7
5.6
1.2
0.8
0.84
t
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
Qgs
Qgd
V
=15V, V =10V, I =3.5A
GS
DS
D
V
I =3.5A, V =0V
GS
1.2
SD
S
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
=15V
DD
V
IN
10V
0V
I
=1.5A
D
V
IN
R =10
L
V
D
OUT
PW=10s
D.C.≤1%
G
SCH1439
P. G
50
S
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2
SCH1439
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3
SCH1439
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4
SCH1439
PACKAGE DIMENSIONS
unit : mm
SOT-563 / SCH6
CASE 463AB
ISSUE O
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Recommended
Soldering Footprint
0.3
0.5 0.5
ORDERING INFORMATION
Device
Marking
Package
Shipping (Qty / Packing)
5,000 / Tape & Reel
SCH1439-TL-H
SCH1439-TL-W
SOT-563 / SCH6
(Pb-Free / Halogen Free)
ZQ
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the SCH1439 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
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