SCH2825-TL-E [ONSEMI]
N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode;
| 型号： | SCH2825-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode |
| 文件： | 总6页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1006B
SCH2825
N-Channel Power MOSFET
http://onsemi.com
Ω
30V, 1.6A, 180m , Single SCH6 with Schottky Diode
Features
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting
•
•
•
•
•
[MOSFET] Low ON-resistance
Ultrahigh-speed switching
Low forward voltage
4V drive
•
•
[SBD]
Short reverse recovery time
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
V
30
±20
1.6
V
V
DSS
V
GSS
I
D
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
I
PW 10 s, duty cycle 1%
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
6.4
A
≤
μ
≤
DP
P
0.6
W
°C
×
D
Tch
150
Tstg
--55 to +125
C
°
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
V
30
V
V
RRM
V
30
0.5
RSM
I
I
A
O
50Hz sine wave, 1 cycle
3
A
FSM
Tj
--55 to +125
--55 to +125
°C
°C
Tstg
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SCH6
7028-003
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
1.6
0.2
SCH2825-TL-E
Packing Type : TL
Marking
XA
0.2
6
5
4
3
2
1
TL
0.5
1 : Gate
Electrical Connection
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6
5
4
6 : Drain
SCH6
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002992/62712TKIM/D1207PE TIIM TC-00001031 No. A1006-1/6
SCH2825
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
[MOSFET]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
30
(BR)DSS
D
GS
I
V
=30V, V =0V
1
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.2
0.6
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =800mA
D
1.0
S
|
DS
R
R
(on)1
(on)2
=800mA, V =10V
GS
135
230
88
180
330
m
Ω
Ω
DS
DS
D
Static Drain to Source On-State Resistance
I
D
=400mA, V =4V
GS
m
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
pF
Coss
Crss
V
=10V, f=1MHz
19
pF
pF
ns
DS
11
t
t
t
t
(on)
3.4
d
r
3.5
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
10.6
4.0
ns
d
f
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Qg
2.0
nC
nC
nC
V
Qgs
Qgd
V
=10V, V =10V, I =1.6A
GS
0.33
0.29
0.82
DS
D
V
SD
I =1.6A, V =0V
S GS
1.2
Reverse Voltage
V
I =0.5mA
30
V
V
R
R
Forward Voltage
V
F
I =0.5A
F
0.42
13
0.48
120
Reverse Current
I
R
V =15V
R
A
μ
Interterminal Capacitance
Reverse Recovery Time
C
V =10V, f=1MHz
R
pF
ns
t
I =I =100mA, See specified Test Circuit.
F R
10
rr
Switching Time Test Circuit
(MOSFET)
t
Test Circuit
rr
(SBD)
V
=15V
V
DD
IN
Duty≤10%
10V
0V
I
=800mA
D
V
IN
R =18.75Ω
L
50Ω
100Ω
10Ω
10μs
D
V
OUT
PW=10μs
D.C.≤1%
G
--5V
t
rr
SCH2825
P.G
50Ω
S
Ordering Information
Device
Package
SCH6
Shipping
memo
SCH2825-TL-E
5,000pcs./reel
Pb Free
No. A1006-2/6
SCH2825
I
D
-- V
[MOSFET]
I
D
-- V
GS
[MOSFET]
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
=10V
DS
3.0V
=2.5V
0.9
[MOISTF13E1T07]
Ta=25°C
0.2
0
0.2
0
V
GS
G1a.t0e to Source Voltage, V
0
0.1
0.3
0.4
0.5
0.6
0.7
DS
0.8
1.0
0
0.5
1.5
2.0
2.5
3.0
-- V
3.5
4.0
0D.2rain to Source Voltage, V
-- V
[MOISTF13E1T08]
GS
R
(on) -- V
DS
R
(on) -- Ta
DS
GS
390
360
330
300
270
240
210
180
150
390
360
330
300
270
240
210
180
150
120
I =0.4A
D
0.8A
120
90
90
60
0
2
4
6
8
12
-- V
14
16
--60 --40
0
20
40
60
100
140 160
[MOISTF13E1T32]
Gate to Source Voltage,1V0
--20 Ambient Temperature,8T0a -- °C 120
[MOISTF13E1T31]
GS
yfs -- I
D
I
-- V
S SD
3
2
3
2
V
=10V
V
=0V
DS
GS
1.0
1.0
7
7
5
5
3
2
3
2
0.1
7
5
0.1
7
3
2
5
0.01
3
2
7
5
3
2
0.01
7
0.001
2
3
5
7
2
3
5
7
2
3
5 7
0.2
0.4
0.6
1.0
1.2
Diode Forward Voltag0e.,8V
-- V
0.001
0.01
0.1
1.0
IT13111
Drain Current, I -- A
SW Time -- I
D
[MOSFET]
[MOISTF13E1T12]
D
SD
Ciss, Coss, Crss -- V
DS
5
3
2
V
=15V
f=1MHz
DD
V
=10V
GS
3
2
100
7
5
10
7
5
3
2
t (on)
d
3
2
10
7
5
1.0
0.1
2
3
5
7
2
3
5
0
5
10
15
20
30
IT13113
Drain to Source Voltage, V
-- V 25 IT13114
1.0
D
Drain Current, I -- A
DS
No. A1006-3/6
SCH2825
V
-- Qg
[MOSFET]
A S O
[MOSFET]
GS
2
10
9
V
=10V
DS
10
I
=6.4A(PW≤10μs)
I =1.6A
D
DP
7
5
8
3
2
I =1.6A
D
7
1.0
6
7
5
3
2
5
4
3
0.1
Operation in this
area is limited by R (on).
7
DS
5
2
Ta=25°C
3
2
1
0
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
10
2
3
5
0
0
0
0.2
0.4
0.6
0.8
1.0
1.6
1.8
2.0
Total Gate Charge,1Q.2g --1.n4C
Drain to Source Voltage, V
-- V
IT13134
[SBD]
0.1
1.0
P
-- Ta
[MOISTF13E1T33]
DS
I
-- V
F
F
D
0.7
0.6
0.5
0.4
0.3
0.2
1.0
7
5
3
2
0.1
7
5
3
2
0.1
0
0.01
0
0.1
0.3
0.4
0.5
0.6
Fo0rw.2ard Voltage, V -- V
IT07927
[SBD]
20
40
80
140
IT13135
[SBD]
160
Ambien6t0Temperature1,0T0a --1°2C0
F
P (AV) -- I
I
R
-- V
F
O
R
100000
0.35
0.30
0.25
0.20
0.15
0.10
7
5
Rectangular wave
3
2
(1)
(2) (4) (3)
θ
10000
7
5
360°
3
2
Sine wave
1000
7
5
180°
360°
3
2
100
7
5
3
2
(1) Rectangular wave θ=60
°
10
7
(2) Rectangular wave θ=120
°
°
0.05
0
5
(3) Rectangular wave θ=180
3
2
(4) Sine wave θ=180
°
1.0
Avera0g.e2 Output Current,0I.4 -- A
0
0.1
0.3
0.5
0.6
IT08187
[SBD]
Re1v0erse Voltage, V -- V
IT07928
[SBD]
f=1MHz
5
15
20
25
30
R
O
I
-- t
C -- V
R
FSM
100
7
3.5
3.0
Current waveform 50Hz sine wave
IS
5
20ms
t
2.5
2.0
1.5
1.0
3
2
10
7
5
0.5
0
3
2
3
5
7
2
3
5
7
2
3
5
7
7
2
3
5
7
2
3
5
7
1.0
2
3
0.1
1.0
Reverse Voltage, V --1V0
ID00338
0.01
0.1
IT07891
Time, t -- s
R
No. A1006-4/6
SCH2825
Outline Drawing
Land Pattern Example
SCH2825-TL-E
Mass (g) Unit
Unit: mm
0.004
mm
* For reference
0.3
0.5 0.5
No. A1006-5/6
SCH2825
Note on usage : Since the SCH2825 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1006-6/6
相关型号：
SCH2830
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