SFT1202-E [ONSEMI]
High-Voltage Switching Applications; 高压开关的应用型号: | SFT1202-E |
厂家: | ONSEMI |
描述: | High-Voltage Switching Applications |
文件: | 总9页 (文件大小:515K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1169A
SANYO Sem iconductors
DATA S HEET
NPN Epitaxial Planar Silicon Transistor
SFT1202
High-Voltage Switching Applications
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
180
180
150
7
CBO
V
V
CES
V
V
CEO
V
V
EBO
I
C
2
A
Collector Current (Pulse)
Base Current
I
3
A
CP
I
B
400
mA
Continued on next page.
unit : mm (typ)
unit : mm (typ)
Package Dimensions
7518-003
Package Dimensions
7003-003
2.3
0.5
6.5
5.0
6.5
5.0
4
2.3
0.5
SFT1202-E
SFT1202-TL-E
4
0.5
0.85
0.7
0.85
1.2
0.5
1
2
3
0.6
0 to 0.2
1.2
0.6
1 : Base
1 : Base
2 : Collector
3 : Emitter
2 : Collector
3 : Emitter
4 : Collector
1
2
3
4 : Collector
2.3 2.3
SANYO : TP-FA
2.3
2.3
SANYO : TP
Product & Package Information
• Package : TP
• Package : TP-FA
•
•
JEITA, JEDEC : SC-64, TO-251
•
•
JEITA, JEDEC : SC-63, TO-252
Minimum Packing Quantity : 700 pcs./reel
Minimum Packing Quantity
:
500 pcs./bag
Marking
Packing Type (TP-FA) : TL
Electrical Connection
2,4
(TP, TP-FA)
T1202
1
LOT No.
TL
3
http://www.sanyosemi.com/en/network/
80812 TKIM/73008EA TIIM TC-00001478
No. A1169-1/9
SFT1202
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
W
1
15
Collector Dissipation
P
C
Tc=25 C
W
°
Junction Temperature
Storage Temperature
Tj
150
C
C
°
Tstg
--55 to +150
°
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
V
=80V, I =0A
E
A
A
μ
CBO
CB
I
=4V, I =0A
1
μ
EBO
EB
C
h
V
CE
=5V, I =100mA
200
560
FE
C
Gain-Bandwidth Product
Output Capacitance
f
V
=10V, I =300mA
140
12
MHz
pF
mV
mV
V
T
CE C
Cob
V
CB
=10V, f=1MHz
V
(sat)1
(sat)2
(sat)
I
C
=1A, I =100mA
110
65
165
100
1.2
CE
B
Collector-to-Emitter Saturation Voltage
V
I =0.5A, I =50mA
C B
CE
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
I
C
=1A, I =100mA
0.85
BE
B
V
I
C
=10 A, I =0A
180
180
150
7
V
μ
(BR)CBO
E
V
I
C
=100 A, R
=
V
μ
0Ω
(BR)CES
BE
V
I
C
=1mA, R =
BE
V
∞
(BR)CEO
V
I =10 A, I =0A
E
V
μ
(BR)EBO
C
t
t
t
50
1460
70
ns
on
Storage Time
See specified Test Circuit.
ns
stg
f
Fall Time
ns
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
OUTPUT
I
B2
INPUT
V
R
R
B
R
L
50Ω
+
+
100μF
470μF
V
= --5V
V
=75V
CC
BE
I =10I = --10I =0.5A
C
B1
B2
Ordering Information
Device
Package
TP
Shipping
memo
SFT1202-E
500pcs./bag
700pcs./reel
Pb Free
SFT1202-TL-E
TP-FA
No. A1169-2/9
SFT1202
I
C
-- V
I
C
-- V
CE
CE
2.0
1.5
1.0
2.0
1.5
1.0
10mA
0.5
0
0.5
0
I =0mA
I =0mA
0.4
B
B
0
0.1
0.2
0.3
0.5
0
1
2
3
4
5
Collector-to-Emitter Voltage, V
CE
-- V IT13542
Collector-to-Emitter Voltage, V -- V IT13543
CE
I
-- V
h
FE
-- I
C
BE
C
1000
2.5
2.0
1.5
1.0
V
=5V
V
=5V
CE
CE
7
5
C
Ta=75°
3
2
100
7
5
3
2
0.5
0
10
2
3
5
7
2
3
5
7
1.0
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
Collector Current, I -- A
Base-to-Emitter Voltage, V
BE
-- V
IT13544
IT13545
C
Cob -- V
CB
f
-- I
T
C
3
2
7
5
f=1MHz
V
=10V
CE
3
2
100
7
5
10
3
2
7
5
10
0.01
3
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT13547
0.1
1.0
Collector Current, I -- A
IT13546
Collector-to-Base Voltage, V
CB
-- V
C
V
(sat) -- I
C
V
(sat) -- I
CE
BE
C
7
2
I
/ I =10
B
I
/ I =10
B
C
C
3
2
1.0
0.1
7
5
7
5
3
2
3
0.01
0.01
2
0.01
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
0.1
1.0
0.1
1.0
Collector Current, I -- A
IT13548
Collector Current, I -- A
IT13549
C
C
No. A1169-3/9
SFT1202
A S O
A S O
5
5
I
=3A
I
=3A
<10μs
<10μs
CP
CP
3
2.5
2
3
2.5
2
I =2A
C
I =2A
C
1.0
7
1.0
7
5
5
3
2
3
2
0.1
7
0.1
7
5
5
3
2
3
2
Tc=25°C
Ta=25°C
Single pulse
Single pulse
0.01
0.01
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
100
2
3
2
3
5 7
2
3
5 7
2
3
5 7
10
2
3
5 7 2 3
100
0.01
0.1
1.0
10
0.01
0.1
1.0
Collector-to-Emitter Voltage, V
-- V IT13555
Collector-to-Emitter Voltage, V
-- V IT13556
CE
CE
P
-- Ta
P
-- Tc
C
C
1.2
1.0
0.8
0.6
0.4
16
15
14
12
10
8
6
4
0.2
0
2
0
0
20
40
60
80
100
120
140
160
IT13553
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
Ambient Temperature, Ta -- °C
IT13554
No. A1169-4/9
SFT1202
Taping Specification
SFT1202-TL-E
No. A1169-5/9
SFT1202
Outline Drawing
Land Pattern Example
SFT1202-TL-E
Mass (g) Unit
Unit: mm
0.282
mm
* For reference
7.0
1.5
2.3
2.3
No. A1169-6/9
SFT1202
Bag Packing Specification
SFT1202-E
No. A1169-7/9
SFT1202
Outline Drawing
SFT1202-E
Mass (g) Unit
0.315
mm
* For reference
No. A1169-8/9
SFT1202
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1169-9/9
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