SGH10N60RUFDTU [ONSEMI]
600V，10A 短路额定 IGBT;
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December 2013
SGH10N60RUFD
600V, 10 A Short Circuit Rated IGBT
Features
Description
•
•
•
•
•
Short Circuit Rated 10 us @ TC = 100°C, VGE = 15 V
High Speed Switching
Fairchild's RUFD series of insulated gate bipolar transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUFD series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 10 A
High Input Impedance
CO-PAK, IGBT with FRD : trr = 42 ns (typ.)
Applications
AC & DC Motors Controls, General Purpose Inverters,
and Robotics, and Servo Controls
C
G
TO-3PN
E
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted.
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
Ratings
Unit
V
600
Gate-Emitter Voltage
20
V
Collector Current
@ TC
=
25°C
16
A
IC
ICM (1)
IF
IFM
TSC
PD
Collector Current
@ TC = 100°C
@ TC = 100°C
@ TC = 100°C
10
A
Pulsed Collector Current
30
A
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
12
A
92
10
A
us
W
W
°C
°C
@ TC
@ TC = 100°C
=
25°C
75
30
TJ
Tstg
-55 to +150
-55 to +150
TL
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
Max.
1.6
2.5
40
Unit
°C/W
°C/W
°C/W
--
--
--
Thermal Resistance, Junction-to-Ambient
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©2002 Fairchild Semiconductor Corporation
SGH10N60RUFD Rev. C0
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
SGH10N60RUFD SGH10N60RUFD
TO-3PN
Tube
N/A
N/A
30 units
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ΔBVCES
/ ΔTJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
GE = 0 V, IC = 1 mA
600
--
--
--
--
V
V
0.6
V/°C
uA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
250
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 10 mA, VCE = VGE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
I
C = 10 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
VCE(sat)
IC = 16 A, VGE = 15 V
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
660
115
25
--
--
--
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
30
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Rise Time
Turn-Off Delay Time
Fall Time
36
50
200
--
VCC = 300 V, IC = 10 A,
R
G = 20 Ω, VGE = 15 V,
158
141
215
356
16
Inductive Load, TC = 25°C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
--
500
--
33
--
Turn-Off Delay Time
Fall Time
42
60
350
--
V
R
CC = 300 V, IC = 10 A,
G = 20Ω, VGE = 15 V,
242
161
452
613
Inductive Load, TC = 125°C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
860
VCC = 300 V, VGE = 15 V
@ TC = 100°C
Tsc
Short Circuit Withstand Time
10
--
--
us
Qg
Total Gate Charge
--
--
--
--
30
5
45
10
16
--
nC
nC
nC
nH
VCE = 300 V, IC = 10 A,
Qge
Qgc
Le
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
GE = 15 V
8
Measured 5mm from PKG
14
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
42
Max.
1.7
--
Unit
TC
TC = 100°C
TC 25°C
C = 100°C
TC 25°C
C = 100°C
TC 25°C
TC = 100°C
=
25°C
VFM
Diode Forward Voltage
IF = 12 A
V
--
=
--
60
--
trr
Diode Reverse Recovery Time
ns
A
T
--
60
=
--
3.5
5.6
80
6.0
--
Diode Peak Reverse Recovery
Current
IF = 12 A,
di/dt=200A/us
Irr
T
--
=
--
180
--
Qrr
Diode Reverse Recovery Charge
nC
--
220
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
SGH10N60RUFD Rev. C0
2
Typical Characteristics
30
25
20
15
10
5
40
20V
15V
Common Emitter
TC = 25℃
Common Emitter
GE = 15V
TC 25℃ ━━
TC = 125℃ ------
35
30
25
20
15
10
5
V
=
12V
VGE = 10V
0
0
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
16
14
12
10
8
4.0
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
3.5
3.0
2.5
2.0
1.5
1.0
20A
10A
6
4
IC = 5A
Duty cycle : 50%
TC = 100℃
2
Power Dissipation = 18W
0
0.1
1
10
100
1000
-50
0
50
100
150
Case Temperature, TC [℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
Common Emitter
TC = 25℃
T
C = 125℃
16
12
8
20A
20A
4
4
10A
10A
IC = 5A
IC = 5A
0
0
0
4
8
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
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©2002 Fairchild Semiconductor Corporation
SGH10N60RUFD Rev. C0
3
Typical Characteristics (continued)
1400
Common Emitter
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
V
T
GE = 0V, f = 1MHz
C = 25℃
1200
1000
800
600
400
200
0
TC
= 25℃ ━━
Ton
Tr
TC = 125℃ ------
100
Cies
Coes
Cres
10
10
100
Gate Resistance, RG [Ω]
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 10A
V
I
CC = 300V, VGE = ± 15V
C = 10A
TC 25℃ ━━
1000
TC
= 25℃ ━━
=
TC = 125℃ ------
TC = 125℃ ------
Toff
Eoff
Eon
Toff
Tf
Eoff
Tf
100
100
10
100
Gate Resistance, RG [Ω]
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
Common Emitter
VGE = ± 15V, RG = 20Ω
V
GE = ± 15V, RG = 20Ω
TC 25℃ ━━
TC = 125℃ ------
TC
=
25℃ ━━
=
TC = 125℃ ------
100
Ton
Tr
Toff
Tf
Toff
Tf
100
10
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
SGH10N60RUFD Rev. C0
4
Typical Characteristics (continued)
15
12
9
Common Emitter
RL = 30 Ω
TC = 25℃
Common Emitter
V
GE = ± 15V, RG = 20Ω
TC 25℃ ━━
TC = 125℃ ------
1000
=
300 V
200 V
VCC = 100 V
Eoff
6
100
3
Eon
10
0
5
15
20
0
10
20
30
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
50
IC MAX. (Pulsed)
50us
IC MAX. (Continuous)
100us
10
1㎳
10
DC Operation
1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
0.1
Safe Operating Area
VGE = 20V, TC = 100℃
1
1
10
100
1000
0.1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
1
0.2
0.1
0.05
0.1
Pdm
0.02
0.01
t1
t2
0.01
Duty factor D = t1 / t2
single pulse
Peak Tj = Pdm
× Zthjc + T
C
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
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©2002 Fairchild Semiconductor Corporation
SGH10N60RUFD Rev. C0
5
Typical Characteristics (continued)
100
10
1
TC
= 25℃ ━━
VR = 200V
IF = 12A
TC = 100℃ ------
100
10
1
TC
= 25℃ ━━
TC = 100℃ ------
100
1000
0
1
2
3
di/dt [A/us]
Forward Voltage Drop, VFM [V]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
600
100
VR=200V
IF=12A
TC 25℃ ━━
TC = 100℃ ------
VR = 200V
IF = 12A
500
= 25℃ ━━
=
TC
80
60
40
20
0
TC = 100℃ ------
400
300
200
100
0
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
www.fairchildsemi.com
©2002 Fairchild Semiconductor Corporation
SGH10N60RUFD Rev. C0
6
Mechanical Dimensions
Figure 22. TO3, 3-Lead, Plastic, EIAJ SC-65
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SGH10N60RUFD Rev. C0
7
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Rev. I66
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8
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