SGH20N60RUFDTU [ONSEMI]
分立，短路额定 IGBT;
| 型号： | SGH20N60RUFDTU |
| 厂家： | 
ONSEMI |
| 描述： | 分立，短路额定 IGBT 局域网 电动机控制 栅 瞄准线 双极性晶体管 开关 |
| 文件： | 总10页 (文件大小：765K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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IGBT
SGH20N60RUFD
Short Circuit Rated IGBT
General Description
Features
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
•
•
•
•
•
Short circuit rated 10us @ T = 100°C, V = 15V
C
GE
High speed switching
Low saturation voltage : V
High input impedance
= 2.2 V @ I = 20A
CE(sat)
C
CO-PAK, IGBT with FRD : t = 50ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
G
TO-3PN
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGH20N60RUFD
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
32
A
C
I
C
Collector Current
@ T = 100°C
20
A
C
I
I
I
Pulsed Collector Current
60
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 100°C
25
220
A
F
C
A
FM
T
@ T = 100°C
10
us
W
W
°C
°C
SC
C
P
@ T
=
25°C
195
D
C
@ T = 100°C
75
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
(IGBT)
0.64
0.83
40
θJC
θJC
θJA
(DIODE)
--
Thermal Resistance, Junction-to-Ambient
--
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 20mA, V = V
GE
5.0
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
GE(th)
C
C
C
CE
= 20A,
= 32A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
1323
254
47
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
49
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
48
70
200
--
V
R
= 300 V, I = 20A,
C
d(off)
f
CC
= 10Ω, V = 15V,
152
524
473
997
30
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
--
1400
--
ts
t
t
t
t
d(on)
r
51
--
Turn-Off Delay Time
Fall Time
52
75
400
--
V
= 300 V, I = 20A,
C
d(off)
f
CC
R
= 10Ω, V = 15V,
311
568
1031
1599
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
C
on
off
ts
--
2240
V
= 300 V, V = 15V
GE
C
CC
T
Short Circuit Withstand Time
10
--
--
us
sc
@ T = 100°C
Q
Total Gate Charge
--
--
--
--
55
10
25
14
80
15
40
--
nC
nC
nC
nH
g
V
V
= 300 V, I = 20A,
= 15V
CE
GE
C
Q
Q
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
ge
gc
L
Measured 5mm from PKG
e
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
50
Max.
1.7
--
Units
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 25A
F
V
FM
--
=
--
95
--
t
I
Diode Reverse Recovery Time
ns
A
rr
--
105
4.5
8.5
112
420
=
--
10
--
Diode Peak Reverse Recovery
Current
I = 25A,
F
rr
di/dt=200A/us
--
=
--
375
--
Q
Diode Reverse Recovery Charge
nC
rr
--
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Common Emitter
TC = 25℃
20V
15V
Common Emitter
VGE = 15V
TC
= 25℃ ━━
12V
TC = 125℃ ------
VGE = 10V
0
2
4
6
8
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
Fig 1. Typical Output Characteristics
28
5
VCC = 300V
Common Emitter
Load Current : peak of square wave
24
V
GE = 15V
4
3
2
1
0
40A
30A
20
16
12
8
20A
IC = 10A
Duty cycle : 50%
4
0
℃
TC = 100
Power Dissipation = 32W
-50
0
50
100
150
0.1
1
10
100
1000
℃
Case Temperature, TC
[
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
℃
T
C = 25
TC = 125
16
12
8
40A
40A
20A
4
4
20A
IC = 10A
IC = 10A
8
0
0
0
4
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
2400
2000
1600
1200
800
400
0
Common Emitter
GE = 0V, f = 1MHz
TC = 25℃
Common Emitter
V
±
15V
VCC = 300V, VGE
IC = 20A
=
℃ ━━
= 25
TC
Ton
Tr
Cies
℃
TC = 125 ------
100
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
1
10
Gate Resistance, RG [Ω]
100
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
±
15V
VCC = 300V, VGE
C = 20A
=
I
℃ ━━
= 25
TC
TC = 125 ------
1000
℃
Eoff
1000
Eon
Eoff
Toff
Tf
Toff
Common Emitter
±
15V
V
CC = 300V, VGE
=
Tf
I
C = 20A
℃ ━━
= 25
TC
C = 125 ------
100
℃
T
100
1
10
Gate Resistance, RG [Ω]
100
1
10
Gate Resistance, RG [Ω]
100
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
±
VGE
TC
TC = 125 ------
=
15V, RG = 10Ω
℃ ━━
25
℃
=
Ton
100
Toff
Tf
Tr
Toff
Tf
100
Common Emitter
±
25
VGE
TC
=
15V, RG = 10Ω
℃ ━━
=
℃
T
C = 125 ------
30 35
Collector Current, IC [A]
10
10
15
20
25
30
35
40
10
15
20
25
40
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
15
12
9
Common Emitter
RL = 15 Ω
TC = 25℃
Common Emitter
VGE = ± 15V, R = 10Ω
G
TC
= 25℃ ━━
Eoff
Eoff
TC = 125℃ ------
VCC = 100 V
300 V
200 V
1000
Eon
6
3
100
0
10
15
20
25
30
35
40
0
10
20
30
40
50
60
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100
100
IC MAX. (Pulsed)
㎲
50
㎲
100
IC MAX. (Continuous)
㎳
1
10
DC Operation
10
1
Single Nonrepetitive
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
℃
VGE = 20V, TC = 100
10 100
Collector-Emitter Voltage, VCE [V]
0.1
1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
Pdm
0.01
0.01
1E-3
t1
t2
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + TC
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
100
10
1
℃ ━━
= 25
TC
VR = 200V
IF = 25A
℃
TC = 100 ------
100
10
1
TC
= 25℃ ━━
TC = 100℃ ------
0
1
2
3
100
1000
di/dt [A/us]
Forward Voltage Drop, VFM [V]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
1000
120
VR = 200V
IF = 25A
VR = 200V
IF = 25A
℃ ━━
= 25
℃ ━━
= 25
TC
TC = 100 ------
TC
TC = 100 ------
800
600
400
200
0
100
80
℃
℃
60
40
20
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGH20N60RUFD Rev. B1
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effectiveness.
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In Design
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product development. Specifications may change in
any manner without notice.
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First Production
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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Rev. I1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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