SGL160N60UFDTU [ONSEMI]
600V，50A 短路额定 IGBT;
| 型号： | SGL160N60UFDTU |
| 厂家： | 
ONSEMI |
| 描述： | 600V，50A 短路额定 IGBT 局域网 电动机控制 栅 瞄准线 双极性晶体管 开关 |
| 文件： | 总10页 (文件大小：778K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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IGBT
SGL160N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V (sat) = 2.1 V @ I = 80A
CE
C
High input impedance
CO-PAK, IGBT with FRD: t = 75nS (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G
TO-264
E
G
E
C
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGL160N60UFD
Units
V
V
Collector-Emitter Voltage
600
± 20
V
V
CES
GES
Gate-Emitter Voltage
Collector Current
@ T
=
25°C
160
A
C
I
C
Collector Current
@ T = 100°C
80
A
C
I
I
I
Pulsed Collector Current
300
A
CM (1)
Diode Continuous Forward Current
Diode Maximum Forward Current
M a x i m u m P o w e r D i s s i p a t i o n
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T =100°C
25
A
F
C
280
A
FM
P
@ T
=
25°C
250
W
W
°C
°C
D
C
@ T = 100°C
100
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
(IGBT)
0.5
0.83
25
θJC
θJC
θJA
(DIODE)
--
Thermal Resistance, Junction-to-Ambient
--
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 80mA, V = V
GE
3.5
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
GE(th)
C
C
C
CE
= 80A, V = 15V
Collector to Emitter
Saturation Voltage
GE
V
CE(sat)
= 160A, V = 15V
--
GE
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
5000
600
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
200
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
40
101
90
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
130
150
--
V
R
= 300 V, I = 80A,
C
d(off)
f
CC
= 3.9Ω, V =15V
75
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
2500
1760
4260
45
C
on
off
--
5000
--
ts
t
t
t
t
d(on)
r
105
140
122
2785
3100
5885
345
60
--
Turn-Off Delay Time
Fall Time
200
250
--
V
= 300 V, I = 80A,
C
d(off)
f
CC
R
= 3.9Ω, V = 15V
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
C
on
off
ts
--
--
Q
Q
Q
520
100
150
--
g
V
V
= 300 V, I = 80A,
CE
GE
C
ge
gc
= 15V
95
L
Measured 5mm from PKG
18
e
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
50
Max.
1.7
--
Units
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 25A
F
V
FM
--
=
--
95
--
t
Diode Reverse Recovery Time
ns
A
rr
--
105
4.5
8.5
112
420
=
--
10
--
Diode Peak Reverse Recovery
Current
I = 25A,
di/ dt = 200 A/us
F
I
rr
--
=
--
375
--
Q
Diode Reverse Recovery Charge
nC
rr
--
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
500
400
300
200
100
0
240
200
160
120
80
15V
Common Emitter
VGE = 15V
20V
Common Emitter
℃
TC = 25
12V
℃
℃
TC
= 25
T
C = 125
VGE = 10V
40
0
0
2
4
6
8
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage
Characteristics
Fig 1. Typical Output Characteristics
120
4
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
100
80
60
40
20
0
160A
80A
3
2
IC = 40A
1
0
Duty cycle : 50%
℃
T
C = 100
Power Dissipation = 130W
0
30
60
90
120
150
0.1
1
10
100
1000
℃
[
Case Temperature, TC
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
TC = 25
℃
TC = 125
16
12
8
160A
160A
4
4
80A
8
80A
8
IC = 40A
4
IC = 40A
4
0
0
0
12
16
20
0
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. V
Fig 7. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
8000
7000
6000
5000
4000
3000
2000
1000
0
1000
Common Emitter
GE = 0V, f = 1MHz
TC = 25℃
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 80A
V
Cies
TC
= 25℃
Ton
Tr
TC = 125℃
100
Coes
Cres
20
1
10
80
1
10
Collector - Emitter Voltage, VCE [V]
30
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 7. Capacitance Characteristics
10000
2000
Common Emitter
Common Emitter
±
15V
VCC = 300V, VGE
C = 80A
=
±
15V
V
CC = 300V, VGE
=
I
IC = 80A
1000
℃
℃
TC
= 25
℃
℃
TC
= 25
T
C = 125
Eon
T
C = 125
Toff
Eoff
Eoff
Tf
Tf
100
30
1000
1
10
Gate Resistance, RG [Ω]
80
1
10
Gate Resistance, RG [Ω]
80
Fig 10. Switching Loss vs. Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
500
1000
Common Emitter
±
15V
VCC = 300V, VGE
=
RG = 3.9Ω
℃
℃
TC
TC = 125
= 25
Toff
100
Toff
Tf
100
Ton
Common Emitter
±
VCC = 300V, VGE
RG = 3.9Ω
=
15V
Tf
Tr
℃
℃
TC
TC = 125
= 25
20
10
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
20000
10000
15
12
9
Common Emitter
Common Emitter
RL = 37.5 Ω
±
15V
VCC = 300V, VGE
=
RG = 3.9Ω
℃
TC = 25
℃
℃
TC
= 25
TC = 125
300 V
1000
6
200 V
VCC = 100 V
Eoff
Eon
3
100
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
350
Gate Charge, Qg [ nC ]
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
1000
500
100
IC MAX. (Pulsed)
IC MAX. (Continuous)
100
50us
100us
㎳
1
10
1
DC Operation
10
Single Nonrepetitive
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE=20V, TC=100oC
10
Collector-Emitter Voltage, VCE [V]
0.1
1
0.3
1
10
100
1000
1
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristic
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Pdm
t1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + T
C
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
100
10
1
VR = 200V
IF = 25A
℃
℃
TC
TC = 100
= 25
100
10
1
℃
℃
TC
TC = 100
= 25
100
1000
0
1
2
3
di/dt [A/us]
Forward Voltage Drop, VF [V]
Fig 19. Reverse Recovery Current
Fig 18. Forward Characteristics
120
1000
VR = 200V
IF = 25A
VR = 200V
IF = 25A
℃
℃
TC
TC = 100
= 25
℃
℃
TC
TC = 100
= 25
100
80
800
600
400
200
0
60
40
20
100
1000
100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
Package Dimension
TO-264
20.00 ±0.20
(8.30) (8.30)
(2.00)
(1.00)
(0.50)
(7.00)
(7.00)
4.90 ±0.20
(1.50)
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
+0.25
–0.10
1.00
+0.25
–0.10
0.60
2.80 ±0.30
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
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effectiveness.
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This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Rev. I1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
SGL160N60UFDTU_NL
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-264AA, LEAD FREE, TO-264, 3 PIN
FAIRCHILD
SGL160N60UFTU
Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
FAIRCHILD
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