SGP23N60UFTU [ONSEMI]
IGBT，600V，PT;
| 型号： | SGP23N60UFTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，PT 局域网 电动机控制 栅 瞄准线 双极性晶体管 开关 |
| 文件： | 总9页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2013
SGP23N60UF
600V PT IGBT
General Description
Features
Fairchild’s UF series IGBTs provide low conduction and
switching losses. UF series is designed for the applications
such as general inverters and PFC where High Speed
Switching is required feature.
•
•
•
•
12 A, 600 V, TC = 100°C
Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A
Typical Fall Time. . . . . . . . . .220ns at TJ = 125°C
High Input Impedance
C
G
TO-220
E
G C E
Applications
General Inverter, PFC
©1999 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
SGP23N60UF Rev. C1
Absolute Maximum Ratings
T = 25C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
Ratings
Unit
V
600
Gate-Emitter Voltage
20
V
Collector Current
@ TC
@ TC = 100C
=
25C
23
A
IC
ICM (1)
PD
Collector Current
12
92
A
Pulsed Collector Current
A
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC
@ TC = 100C
=
25C
100
W
W
C
C
40
TJ
Tstg
-55 to +150
-55 to +150
TL
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Typ.
Max.
1.2
Unit
C/W
C/W
Thermal Resistance, Junction-to-Case
--
--
Thermal Resistance, Junction-to-Ambient
62.5
Electrical Characteristics of the IGBT
T
= 25C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
BVCES
TJ
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 uA
GE = 0 V, IC = 1 mA
600
--
--
--
--
V
/
V
0.6
V/C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 12 mA, VCE = VGE
3.5
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
I
I
C = 12 A, VGE = 15 V
C = 23 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
VCE(sat)
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
720
100
25
--
--
--
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
17
27
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
Rise Time
Turn-Off Delay Time
Fall Time
60
130
150
--
V
R
CC = 300 V, IC = 12 A,
G = 23 , VGE = 15 V,
70
Inductive Load, TC = 25C
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
115
135
250
23
--
400
--
32
--
Turn-Off Delay Time
Fall Time
100
220
205
320
525
200
250
--
VCC = 300 V, IC = 12 A,
R
Inductive Load, TC = 125C
G = 23 , VGE = 15 V,
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
800
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C1
2
www.fairchildsemi.com
100
80
60
40
20
0
50
40
30
20
10
0
Common Emitter
VGE = 15V
Common Emitter
TC = 25℃
20V
TC
= 25℃
15V
12V
TC = 125℃
VGE = 10V
0
2
4
6
8
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
20
VCC = 300V
Load Current : peak of square wave
Common Emitter
VGE = 15V
3
2
1
0
15
10
5
24A
12A
IC = 6A
Duty cycle : 50%
TC = 100℃
Power Dissipation = 21W
0
0
30
60
90
120
150
0.1
1
10
100
1000
Case Temperature, TC [℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
20
16
12
8
Common Emitter
TC = 125℃
Common Emitter
T
C = 25℃
16
12
8
24A
24A
4
4
12A
8
12A
8
IC = 6A
IC = 6A
0
0
0
4
12
16
20
0
4
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©1999 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
SGP23N60UF Rev. C1
1200
1000
800
600
400
200
0
200
100
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
Ton
Tr
TC
= 25℃
Cies
T
C = 125℃
Coes
Cres
10
1
10
Collector - Emitter Voltage, VCE [V]
30
1
10
100
200
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
1000
Common Emitter
V
CC = 300V, VGE = ± 15V
IC = 12A
TC 25℃
TC = 125℃
=
Eoff
Eon
Toff
Eon
Eoff
Tf
Toff
100
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
100
50
Tf
TC
= 25℃
TC = 125℃
30
1
10
100
200
1
10
Gate Resistance, RG []
100
200
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
Common Emitter
VCC = 300V, VGE = ± 15V
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 23
R
G = 23
TC 25℃
TC = 125℃
100
=
TC
= 25℃
TC = 125℃
Toff
Tf
Ton
Toff
100
50
Tr
Tf
10
4
8
12
16
20
24
4
8
12
16
20
24
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
SGP23N60UF Rev. C1
15
12
9
1000
100
10
Common Emitter
RL = 25
TC = 25℃
Eoff
Eon
300 V
6
200 V
VCC = 100 V
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 23
Eon
Eoff
3
TC
= 25℃
TC = 125℃
0
4
8
12
16
20
24
0
10
20
30
40
50
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
300
200
100
IC MAX. (Pulsed)
100
50us
100us
IC MAX. (Continuous)
10
10
1
1㎳
DC Operation
1
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 20V, TC = 100℃
0.1
0.1
0.3
1
10
100
1000
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
5
1
0.5
0.2
0.1
0.1
0.05
Pdm
0.02
0.01
t1
t2
0.01
single pulse
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
0.005
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C1
5
www.fairchildsemi.com
Mechanical Dimensions
Figure 18. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C1
6
www.fairchildsemi.com
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®
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®
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©1999 Fairchild Semiconductor Corporation
SGP23N60UF Rev. C1
7
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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