SGS23N60UFDTU_技术文档

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April 2001

IGBT

SGS23N60UFD

Ultra-Fast IGBT

General Description

Features

Fairchild's UFD series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

•

High speed switching

Low saturation voltage : V

High input impedance

= 2.1 V @ I = 12A

CE(sat)

C

CO-PAK, IGBT with FRD : t = 42ns (typ.)

rr

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

C

E

G

TO-220F

G C E

Absolute Maximum Ratings

T = 25°C unless otherwise noted

C

Symbol

Description

SGS23N60UFD

Units

V

Collector-Emitter Voltage

600

CES

GES

Gate-Emitter Voltage

± 20

V

Collector Current

@ T

=

25°C

23

A

C

I

C

Collector Current

@ T = 100°C

12

A

C

I

Pulsed Collector Current

92

A

CM (1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

purposes, 1/8” from case for 5 seconds

@ T = 100°C

12

92

A

F

C

A

FM

P

@ T

=

25°C

73

W

°C

D

C

@ T = 100°C

29

C

T

-55 to +150

J

T

stg

T

300

°C

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Typ.

--

Max.

Units

°C/W

R

(IGBT)

1.7

1.2

θJC

θJA

(DIODE)

--

Thermal Resistance, Junction-to-Ambient

--

62.5

SGS23N60UFD Rev. A

Electrical Characteristics of IGBT

T

= 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

BV

Collector-Emitter Breakdown Voltage

Temperature Coeff. of Breakdown

Voltage

V

= 0V, I = 250uA

600

--

V

CES

GE

C

∆B

/

VCES

J

= 0V, I = 1mA

0.6

V/°C

GE

C

∆T

I

Collector Cut-off Current

G-E Leakage Current

V

= V

, V = 0V

--

250

uA

CES

GES

CE

CES

GE

, V = 0V

± 100

µA

GE

GES

CE

On Characteristics

V

G-E Threshold Voltage

I

= 12mA, V = V

GE

3.5

--

4.5

2.1

2.6

6.5

2.6

--

V

GE(th)

C

CE

= 12A,

= 23A,

V

= 15V

Collector to Emitter

Saturation Voltage

GE

V

CE(sat)

--

Dynamic Characteristics

C

Input Capacitance

--

720

100

25

--

pF

ies

V

= 30V V = 0V,

, GE

CE

Output Capacitance

oes

res

f = 1MHz

Reverse Transfer Capacitance

Switching Characteristics

t

Turn-On Delay Time

--

17

27

--

ns

µJ

ns

µJ

nC

nH

d(on)

Rise Time

r

Turn-Off Delay Time

Fall Time

60

130

150

--

V

R

= 300 V, I = 12A,

C

d(off)

f

CC

= 23Ω, V = 15V,

70

G

GE

Inductive Load, T = 25°C

E

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

115

135

250

23

C

on

off

--

400

--

ts

t

d(on)

r

32

--

Turn-Off Delay Time

Fall Time

100

220

205

320

525

49

200

250

--

V

= 300 V, I = 12A,

C

d(off)

f

CC

R

= 23Ω, V = 15V,

G

GE

Inductive Load, T = 125°C

E

Turn- On Switching Loss

Turn- Off Switching Loss

Total Switching Loss

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

Internal Emitter Inductance

C

on

off

ts

--

800

80

17

22

--

Q

g

V

= 300 V, I = 12A,

CE

GE

C

11

ge

= 15V

14

gc

Le

Measured 5mm from PKG

7.5

Electrical Characteristics of DIODE

T

= 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min.

--

Typ.

1.4

1.3

42

Max.

1.7

--

Units

T

=

25°C

= 100°C

25°C

= 100°C

25°C

= 100°C

25°C

= 100°C

C

V

Diode Forward Voltage

I

= 12A

F

V

FM

--

=

--

60

--

t

Diode Reverse Recovery Time

ns

A

rr

--

80

=

--

3.5

5.6

80

6.0

--

Diode Peak Reverse Recovery

Current

I = 12A,

di/dt = 200A/µs

F

I

rr

--

=

--

180

--

Q

Diode Reverse Recovery Charge

nC

rr

--

220

SGS23N60UFD Rev. A

100

80

60

40

20

0

50

40

30

20

10

0

Common Emitter

V_GE= 15V

Common Emitter

20V

℃

T_C= 25

℃

T_C

= 25

15V

12V

T

_C= 125

V_GE= 10V

0

2

4

6

8

0.5

1

10

Collector - Emitter Voltage, V_CE[V]

Fig 1. Typical Output Chacracteristics

Fig 2. Typical Saturation Voltage

Characteristics

4

18

V_CC= 300V

Load Current : peak of square wave

Common Emitter

V_GE= 15V

15

12

9

3

2

1

0

24A

12A

I_C= 6A

6

3

Duty cycle : 50%

℃

T

_C= 100

Power Dissipation = 16W

0

30

60

90

120

150

0.1

1

10

100

1000

℃

Case Temperature, T_C

[

]

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequency

Temperature at Variant Current Level

20

16

12

8

Common Emitter

℃

_C= 125

T

℃

T_C= 25

16

12

8

24A

4

12A

8

12A

8

I_C= 6A

0

4

12

16

20

0

4

12

16

20

Gate - Emitter Voltage, V_GE[V]

Fig 5. Saturation Voltage vs. V

Fig 6. Saturation Voltage vs. V

GE

SGS23N60UFD Rev. A

1200

1000

800

600

400

200

0

200

100

Common Emitter

V_GE= 0V, f = 1MHz

Common Emitter

±

15V

V_CC= 300V, V_GE

I_C= 12A

=

℃

T_C= 25

Ton

Tr

℃

T_C

= 25

Cies

T_C= 125

Coes

Cres

10

1

10

Collector - Emitter Voltage, V_CE[V]

30

1

10

Gate Resistance, R_G[Ω]

100

200

Fig 7. Capacitance Characteristics

Fig 8. Turn-On Characteristics vs.

Gate Resistance

1000

Common Emitter

±

15V

V

_CC= 300V, V_GE

=

I

_C= 12A

℃

T_C

= 25

Eoff

Eon

T

_C= 125

Toff

Eon

Eoff

Tf

Toff

100

Common Emitter

100

50

±

15V

V_CC= 300V, V_GE

_C= 12A

=

I

Tf

℃

T_C

= 25

T

_C= 125

30

1

10

Gate Resistance, R_G[Ω]

100

200

1

10

Gate Resistance, R_G[Ω]

100

200

Fig 9. Turn-Off Characteristics vs.

Gate Resistance

Fig 10. Switching Loss vs. Gate Resistance

200

1000

Common Emitter

±

15V

V_CC= 300V, V_GE

=

±

15V

V

_CC= 300V, V_GE

=

R_G= 23Ω

R

_G= 23Ω

100

℃

T_C

T_C= 125

= 25

℃

T_C

= 25

T

_C= 125

Toff

Tf

Ton

Toff

100

50

Tr

Tf

10

4

8

12

16

20

24

4

8

12

16

20

24

Collector Current, I_C[A]

Fig 11. Turn-On Characteristics vs.

Collector Current

Fig 12. Turn-Off Characteristics vs.

Collector Current

SGS23N60UFD Rev. A

15

12

9

1000

100

10

Common Emitter

R_L= 25 Ω

℃

T_C= 25

Eoff

Eon

300 V

6

200 V

V_CC= 100 V

Common Emitter

Eon

Eoff

±

15V

V_CC= 300V, V_GE

=

3

R_G= 23Ω

℃

T_C

T_C= 125

= 25

0

4

8

12

16

20

24

0

10

20

30

40

50

Collector Current, I_C[A]

Gate Charge, Q_g[ nC ]

Fig 13. Switching Loss vs. Collector Current

Fig 14. Gate Charge Characteristics

300

200

100

I_CMAX. (Pulsed)

100

50us

I_CMAX. (Continuous)

100us

10

㎳

1

DC Operation

1

Single Nonrepetitive

℃

Pulse T_C= 25

Curves must be derated

linerarly with increase

in temperature

Safe Operating Area

0.1

℃

V_GE= 20V, T_C= 100

0.05

0.1

0.3

1

10

100

1000

1

10

100

1000

Collector-Emitter Voltage, V_CE[V]

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA Characteristics

5

0.5

1

0.2

0.1

0.05

0.1

0.02

0.01

Pdm

t1

t2

single pulse

0.01

Duty factor D = t1 / t2

Peak Tj = Pdm

×

Zthjc + T_C

0.005

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Rectangular Pulse Duration [sec]

Fig 17. Transient Thermal Impedance of IGBT

SGS23N60UFD Rev. A

100

10

1

℃

T_C

= 25

V_R= 200V

I_F= 12A

T_C= 100

100

10

1

℃

T_C

T_C= 100

= 25

100

1000

0

1

2

3

di/dt [A/us]

Forward Voltage Drop, V_FM[V]

Fig 18. Forward Characteristics

Fig 19. Reverse Recovery Current

100

600

V_R= 200V

I_F= 12A

V_R= 200V

I_F= 12A

℃

T_C

T_C= 100

=

25

℃

T_C

T_C= 100

= 25

500

400

300

200

100

0

80

60

40

20

0

100

1000

100

1000

di/dt [A/us]

Fig 20. Stored Charge

Fig 21. Reverse Recovery Time

SGS23N60UFD Rev. A

Package Dimension

TO-220F (FS PKG CODE AQ)

2.54 ±0.20

10.16 ±0.20

ø3.18 ±0.10

(7.00)

(0.70)

(1.00x45°)

MAX1.47

0.80 ±0.10

#1

0.35 ±0.10

+0.10

–0.05

0.50

2.76 ±0.20

2.54TYP

[2.54 ±0.20]

9.40 ±0.20

Dimensions in Millimeters

SGS23N60UFD Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST^®

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SuperSOT™-3

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DOME™

EcoSPARK™

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HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

POP™

PowerTrench^®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

SMART START™

Star* Power™

Stealth™

UltraFET^®

VCX™

FACT™

FACT Quiet Series™

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	SGS23N60UFDTU
厂家：	ONSEMI
描述：	600V，PT IGBT 局域网电动机控制瞄准线双极性晶体管开关
文件：	总10页 (文件大小：713K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SGS23N60UFDTU [ONSEMI]

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