SHN1B01FDW1T1G [ONSEMI]
NPN PNP 双极晶体管;
| 型号： | SHN1B01FDW1T1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN PNP 双极晶体管 小信号双极晶体管 |
| 文件： | 总6页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
http://onsemi.com
Features
(6)
(5)
(4)
Q
• High Voltage and High Current: V
• High h : h = 200X400
• Moisture Sensitivity Level: 1
= 50 V, I = 200 mA
CEO
C
FE FE
Q
1
2
• ESD Rating
− Human Body Model: 3A
− Machine Model: C
(1)
(2)
(3)
• Pb−Free Package is Available
MAXIMUM RATINGS (T = 25°C)
A
4
5
SC−74
CASE 318F
STYLE 3
6
Rating
Symbol
Value
60
Unit
Vdc
3
2
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
1
V
V
50
Vdc
7.0
Vdc
Collector Current − Continuous
I
C
200
mAdc
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
R9
M
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Symbol
Max
380
Unit
mW
°C
R9 = Device Code
= Date Code
P
D
M
Junction Temperature
Storage Temperature
T
J
150
T
stg
−55 to +150
°C
ORDERING INFORMATION
†
Device
Package
Shipping
HN1B01FDW1T1
HN1B01FDW1T1G
SC−74 3000/Tape & Reel
SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2005
Publication Order Number:
March, 2005 − Rev. 2
HN1B01FDW1T1/D
HN1B01FDW1T1
Q1: PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(I = 2.0 mAdc, I = 0)
V
−50
−
Vdc
(BR)CEO
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
−60
−7.0
−
−
−
Vdc
Vdc
(BR)CBO
(BR)EBO
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
E
C
Collector−Base Cutoff Current
(V = 45 Vdc, I = 0)
I
I
−0.1
mAdc
CBO
CEO
CB
E
Collector−Emitter Cutoff Current
(V = 10 Vdc, I = 0)
−
−
−
−0.1
−2.0
−1.0
mAdc
mAdc
mAdc
CE
B
(V = 30 Vdc, I = 0)
CE
B
(V = 30 Vdc, I = 0, T = 80°C)
CE
B
A
DC Current Gain (Note 1)
(V = 6.0 Vdc, I = 2.0 mAdc)
h
−
FE
−200
−400
−0.3
CE
C
Collector−Emitter Saturation Voltage
V
−0.15
Vdc
CE(sat)
(I = 100 mAdc, I = 10 mAdc)
C
B
Q2: NPN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
(I = 2.0 mAdc, I = 0)
V
50
−
Vdc
(BR)CEO
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
60
7.0
−
−
−
Vdc
Vdc
(BR)CBO
(BR)EBO
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
E
C
Collector−Base Cutoff Current
(V = 45 Vdc, I = 0)
I
I
0.1
mAdc
CBO
CB
E
Collector−Emitter Cutoff Current
(V = 10 Vdc, I = 0)
CEO
−
−
−
0.1
2.0
1.0
mAdc
mAdc
mAdc
CE
B
(V = 30 Vdc, I = 0)
CE
B
(V = 30 Vdc, I = 0, T = 80°C)
CE
B
A
DC Current Gain (Note 1)
(V = 6.0 Vdc, I = 2.0 mAdc)
h
FE
200
400
−
CE
C
Collector−Emitter Saturation Voltage
(I = 100 mAdc, I = 10 mAdc)
V
0.15
0.25
Vdc
CE(sat)
C
B
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
HN1B01FDW1T1
Typical Electrical Characteristics: PNP Transistor
−200
1000
−1.5 mA
−2.0 mA
−160
−120
−80
−1.0 mA
T = 100°C
A
25°C
−25°C
−0.5 mA
100
I
B
= −0.2 mA
−40
0
T = 25°C
A
V
CE
= −1.0 V
10
0
−1
−2
−3
−4
−5
−6
−1
−10
−100
−1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 1. Collector Saturation Region
Figure 2. DC Current Gain
1000
−1
I /I = 10
C
B
T = 100°C
A
T = 100°C
A
25°C
25°C
−25°C
−25°C
100
−0.1
V
CE
= −6.0 V
10
−1
−0.01
−10
−100
−1000
−1
−10
−100
−1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
Figure 4. VCE(sat) versus IC
−10
−10,000
COMMON EMITTER
= 6 V
25°C
V
CE
T = 100°C
A
−1000
−100
−10
−25°C
−1
−1
T = 25°C
A
I /I = 10
C
B
−0.1
−0.1
−1
−10
−100
−1000
0
−0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
, BASE−EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
V
BE
C
Figure 5. VBE(sat) versus IC
Figure 6. Base−Emitter Voltage
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3
HN1B01FDW1T1
Typical Electrical Characteristics: NPN Transistor
280
1000
6.0 mA
5.0 mA
2.0 mA
3.0 mA
240
200
160
120
80
T = 100°C
A
25°C
−25°C
1.0 mA
100
0.5 mA
I
B
= 0.2 mA
40
0
V
CE
= 1.0 V
T = 25°C
A
10
0
1
2
3
4
5
6
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 7. Collector Saturation Voltage
Figure 8. DC Current Gain
1000
1
I /I = 10
C
B
T = 100°C
A
25°C
−25°C
T = 100°C
A
25°C
100
0.1
−25°C
V
CE
= 6.0 V
10
0.01
1
10
100
1000
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
Figure 10. VCE(sat) versus IC
10
10,000
COMMON EMITTER
= 6 V
25°C
V
T = 100°C
A
CE
1000
100
10
−25°C
1
1
T = 25°C
A
I /I = 10
C
B
0.1
0.1
1
10
100
1000
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, BASE−EMITTER VOLTAGE (V)
1
I , COLLECTOR CURRENT (mA)
V
BE
C
Figure 11. VBE(sat) versus IC
Figure 12. Base−Emitter Voltage
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4
HN1B01FDW1T1
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE K
NOTES:
A
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
6
5
2
4
B
S
1
3
INCHES
DIM MIN MAX
MILLIMETERS
D
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
0
MAX
3.10
1.70
1.10
0.50
1.05
0.100
0.26
0.60
1.65
10
A
B
C
D
G
H
J
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
G
M
J
C
0.05 (0.002)
K
L
K
H
M
S
0
10
0.0985 0.1181
_
_
_
_
2.50
3.00
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
HN1B01FDW1T1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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HN1B01FDW1T1/D
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