概述
规格参数
数据手册SI3457DV 概述
双P沟道逻辑电平PowerTrench® MOSFET 小信号场效应晶体管
SI3457DV 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 包装说明： | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.29.00.95 |
| 风险等级： | 0.98 | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 30 V | 最大漏极电流 (Abs) (ID)： | 4 A |
| 最大漏极电流 (ID)： | 4 A | 最大漏源导通电阻： | 0.05 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PDSO-G6 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 6 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | P-CHANNEL | 最大功率耗散 (Abs)： | 0.8 W |
| 认证状态： | Not Qualified | 子类别： | Other Transistors |
| 表面贴装： | YES | 端子面层： | Tin (Sn) |
| 端子形式： | GULL WING | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
SI3457DV 数据手册
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2001
Si3457DV
Single P-Channel Logic Level PowerTrench MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
• –4 A, –30 V.
RDS(ON) = 50 mΩ @ VGS = –10 V
RDS(ON) = 75 mΩ @ VGS = –4.5 V
• Low gate charge
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• Battery protection
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–30
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
±25
–4
(Note 1a)
–20
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.457
Si3457DV
7’’
8mm
3000 units
Si3457DV Rev A1 (W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–30
V
V
GS = 0 V, ID = –250 µA
Breakdown Voltage Temperature
Coefficient
–22
∆BVDSS
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –24 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
VGS = 25 V,
VGS = –25 V
VDS = 0 V
VDS = 0 V
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–1
–1.8
4
–3
V
V
DS = VGS, ID = –250 µA
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V,
GS = –4.5 V, ID = –3.4 A
VGS = –10 V, ID = –4 A;TJ=125°
ID = –4 A
44
67
60
50
75
70
mΩ
V
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –4 A
–20
A
S
Forward Transconductance
8.4
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
470
126
61
pF
pF
pF
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
7
12
16
6
14
22
29
12
8.1
ns
ns
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
ns
ns
Qg
Qgs
Qgd
6
nC
nC
nC
VDS = –15 V,
ID = –4 A,
V
GS = –.5 V
2.1
2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.3
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
–0.77 –1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
mounted on a 1in2 pad
of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si3457DV Rev A1 (W)
Typical Characteristics
20
2
1.8
1.6
1.4
1.2
1
VGS = -10V
-6.0V
-5.0V
-4.5V
15
10
5
VGS = -4.5V
-4.0V
-5.0V
-3.5V
-6.0V
-7.0V
-8.0V
-10V
-3.0V
0
0.8
0
1
2
3
4
5
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.22
ID = -4.0A
VGS = -10V
ID = -2.0A
0.18
0.14
0.1
TA = 125oC
TA = 25oC
0.8
0.6
0.06
0.02
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
15
12
9
VGS = 0V
25oC
VDS = -5V
TA = -55oC
1
125o
TA = 125oC
0.1
25oC
0.01
6
-55oC
0.001
3
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1
2
3
4
5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3457DV Rev A1 (W)
Typical Characteristics
10
600
450
300
150
0
f = 1 MHz
VGS = 0 V
ID = -4A
VDS = -5V
CISS
-10V
8
6
4
2
0
-15V
COSS
CRSS
0
2
4
6
8
10
0
6
12
18
24
30
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
8
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
100µs
RDS(ON) LIMIT
10
1
1ms
10ms
6
100ms
1s
4
DC
VGS = -10V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
0.1
0.01
2
0
0.1
1
10
100
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
R
θJA = 156oC/W
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3457DV Rev A1 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerSaver™
PowerTrench
QFET
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
QS™
QT Optoelectronics™ TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
UltraFET
FACT Quiet Series™
SILENT SWITCHER VCX™
SMART START™
SPM™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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