SL24T3 [ONSEMI]

300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections; 300瓦,采用SOT -23低电容TVS高速线路保护
SL24T3
型号: SL24T3
厂家: ONSEMI    ONSEMI
描述:

300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections
300瓦,采用SOT -23低电容TVS高速线路保护

瞬态抑制器 二极管 电视 光电二极管 局域网
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SL05T1 Series  
300 Watt, SOT-23 Low  
Capacitance TVS for High  
Speed Line Protections  
This new family of TVS offers transient overvoltage protection with  
significantly reduced capacitance. The capacitance is lowered by  
integrating a compensating diode in series. This integrated solution  
offers ESD protection for high speed interfaces such as communication  
systems, computers, and computer peripherals.  
http://onsemi.com  
2
1
Specification Features:  
TVS Diode in Series with a Compensating Diode Offers <5 pF  
Capacitance  
3
(NC)  
ESD Protection Meeting IEC 61000–4–2, 4–4, 4–5  
Peak Power Rating of 300 Watts, 8 × 20 ms  
Bi–Direction Protection Can Be Achieved By Using Two Devices  
Flammability Rating UL 94 V–0  
MARKING  
DIAGRAM  
3
Mechanical Characteristics:  
1
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
2
xxx  
SOT–23  
CASE 318  
STYLE 26  
xxx = Device Code  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
M
= Date Code  
Use the Device Number to order the 7 inch/3,000 unit reel.  
Replace the “T1” with “T3” in the Device Number to order the  
13 inch/10,000 unit reel.  
ORDERING INFORMATION  
Device  
Package  
SOT–23  
SOT–23  
SOT–23  
SOT–23  
SOT–23  
SOT–23  
Shipping  
SL05T1  
SL15T1  
SL24T1  
SL05T3  
SL15T3  
SL24T3  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
10,000/Tape & Reel  
10,000/Tape & Reel  
10,000/Tape & Reel  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 3 of this data sheet.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
May, 2002 – Rev. 3  
SL05T1/D  
SL05T1 Series  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation @ 8x20 usec (Note 1)  
P
pk  
300  
W
@ T 25°C  
L
IEC 61000–4–2  
Contact Discharge  
Air Discharge  
IEC 61000–4–4  
IEC 61000–4–5  
Level 4  
V
pp  
±8  
±16  
40  
kV  
kV  
Amps  
Amps  
EFT  
Lightning  
12  
Total Power Dissipation on FR–5 Board (Note 2) @ T = 25°C  
Derate above 25°C  
°P °  
D
225  
1.8  
°mW°  
mW/°C  
A
Thermal Resistance Junction to Ambient  
R
556  
°C/W  
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C  
Derate above 25°C  
°P °  
D
300  
2.4  
°mW  
mW/°C  
A
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature Range  
Lead Solder Temperature – Maximum (10 Second Duration)  
R
417  
– 55 to +150  
260  
°C/W  
°C  
q
JA  
T , T  
J
stg  
T
°C  
L
1. Non–repetitive current pulse per Figure 2  
2. FR–5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
A
I
F
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
C
Clamping Voltage @ I  
PP  
V
C
V
V
BR RWM  
V
I
V
F
V
RWM  
Working Peak Reverse Voltage  
R
T
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
BR  
BR  
I
F
Forward Current  
Uni–Directional TVS  
V
F
Forward Voltage @ I  
F
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
http://onsemi.com  
2
SL05T1 Series  
ELECTRICAL CHARACTERISTICS  
Breakdown Voltage  
V , Clamping Voltage  
C
(Note 4)  
(Note 5)  
Capacitance  
Max  
V
BR  
@ 1 mA (Volts)  
@ 1 Amp @ 5 Amp  
@ V = 0 V, 1 MHz (pF)  
I
PP  
V
RWM  
I @ V  
R RWM  
R
Device  
(Amps)  
(Volts)  
5.0  
(mA)  
20  
Min  
Max  
8.0  
(Volts)  
9.8  
(Volts)  
11  
Typ  
3.5  
3.5  
3.5  
Max  
5.0  
5.0  
5.0  
Marking  
Device  
SL05  
L05  
L15  
L24  
6.0  
17  
10  
SL15  
15  
1.0  
1.0  
16.7  
26.7  
18.5  
29  
24  
30  
SL24  
24  
43  
55  
5.0  
4. V measured at pulse test current of 1 mA at an ambient temperature of 25°C  
BR  
5. Surge current waveform per Figure 2  
TYPICAL CHARACTERISTICS  
10  
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
t
r
PEAK VALUE I  
@ 8 ms  
RSM  
PULSE WIDTH (t ) IS DEFINED  
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
P
HALF VALUE I  
/2 @ 20 ms  
RSM  
0.1  
t
P
10  
0
0.01  
0.1  
1
10  
100  
1000  
0
20  
40  
t, TIME (ms)  
60  
80  
PULSE WIDTH (ms)  
Figure 1. Maximum Peak Power Rating  
Figure 2. 8 × 20 ms Pulse Waveform  
4
3.5  
3
10  
1
SL05T1  
2.5  
2
SL05  
SL15  
SL24  
1.5  
1
0.1  
0.5  
0
0.01  
@ ZERO BIAS  
@ 50% V  
@ V  
–55  
25  
150  
RWM  
RWM  
TEMPERATURE (°C)  
Figure 3. Typical Junction Capacitance  
Figure 4. Typical Leakage Over Temperature  
http://onsemi.com  
3
SL05T1 Series  
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE  
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS  
Surface mount board layout is a critical portion of the  
total design. The footprint for the semiconductor packages  
must be the correct size to insure proper solder connection  
interface between the board and the package. With the  
correct pad geometry, the packages will self align when  
subjected to a solder reflow process.  
0.037  
0.95  
0.037  
0.95  
0.079  
2.0  
0.035  
0.9  
0.031  
0.8  
inches  
mm  
SOT–23  
SOT–23 POWER DISSIPATION  
The power dissipation of the SOT–23 is a function of the  
SOLDERING PRECAUTIONS  
drain pad size. This can vary from the minimum pad size  
for soldering to a pad size given for maximum power  
dissipation. Power dissipation for a surface mount device is  
The melting temperature of solder is higher than the rated  
temperature of the device. When the entire device is heated  
to a high temperature, failure to complete soldering within  
a short time could result in device failure. Therefore, the  
following items should always be observed in order to  
minimize the thermal stress to which the devices are  
subjected.  
Always preheat the device.  
The delta temperature between the preheat and  
soldering should be 100°C or less.*  
When preheating and soldering, the temperature of the  
leads and the case must not exceed the maximum  
temperature ratings as shown on the data sheet. When  
using infrared heating with the reflow soldering  
method, the difference shall be a maximum of 10°C.  
The soldering temperature and time shall not exceed  
260°C for more than 10 seconds.  
When shifting from preheating to soldering, the  
maximum temperature gradient shall be 5°C or less.  
After soldering has been completed, the device should  
be allowed to cool naturally for at least three minutes.  
Gradual cooling should be used as the use of forced  
cooling will increase the temperature gradient and  
result in latent failure due to mechanical stress.  
Mechanical stress or shock should not be applied  
during cooling.  
determined by T  
, the maximum rated junction  
J(max)  
temperature of the die, R , the thermal resistance from  
qJA  
the device junction to ambient, and the operating  
temperature, T . Using the values provided on the data  
A
sheet for the SOT–23 package, P can be calculated as  
D
follows:  
TJ(max) – TA  
PD =  
Rq  
JA  
The values for the equation are found in the maximum  
ratings table on the data sheet. Substituting these values  
into the equation for an ambient temperature T of 25°C,  
A
one can calculate the power dissipation of the device which  
in this case is 225 milliwatts.  
150°C – 25°C  
PD =  
= 225 milliwatts  
556°C/W  
The 556°C/W for the SOT–23 package assumes the use  
of the recommended footprint on a glass epoxy printed  
circuit board to achieve a power dissipation of 225  
milliwatts. There are other alternatives to achieving higher  
power dissipation from the SOT–23 package. Another  
alternative would be to use a ceramic substrate or an  
aluminum core board such as Thermal Clad . Using a  
board material such as Thermal Clad, an aluminum core  
board, the power dissipation can be doubled using the same  
footprint.  
* * Soldering a device without preheating can cause  
excessive thermal shock and stress which can result in  
damage to the device.  
http://onsemi.com  
4
SL05T1 Series  
Applications Background  
This new family of TVS devices (SL05T1 series) are  
designed to protect sensitive electronics such as  
communications systems, computers, and computer  
peripherals against damage due to ESD conditions or  
transient voltage conditions. Because of their low  
capacitance value (less than 5 pF), they can be used in high  
speed I/O data lines. Low capacitance is achieved by  
integrating a compensating diode in series with the TVS  
which is basically based in the below theoretical principle:  
2
1
1
2
3
3
Figure 6.  
An alternative solution to protect unidirectional lines, is to  
connect a fast switching steering diode in parallel with the  
SL05T1 series device. When the steering diode is  
forward–biased, the TVS will avalanche and conduct in  
reverse direction. It is important to note that by adding a  
steering diode, the effective capacitance in the circuit will be  
increased, therefore the impact of adding a steering diode  
must be taken in consideration to establish whether the  
incremental capacitance will affect the circuit functionality  
or not. The Figure 7 shows the connection between the  
steering diode and the SL05T1 series device:  
Capacitance in parallel: CT = C1+C2+....+Cn  
Capacitance in series: 1/CT = (1/C1)+(1/C2)+....+(1/Cn)  
The Figure 5 shows the integrated solution of the SL05T1  
series device:  
COMPENSATING  
DIODE  
TVS  
Figure 5.  
In the case that an over–voltage condition occurs in the I/O  
line protected by the SL05T1 series device, the TVS is  
reversed–biased while the compensation diode is  
forward–biased so the resulting current due to the transient  
voltage is drained to ground.  
SL05T1 DEVICE  
If protection in both polarities is required, an additional  
device is connected in inverse–parallel with reference to the  
first one, the Figure 6 illustrates the inverse–parallel  
connection for bi–directional or unidirectional lines:  
STEERING DIODE  
Figure 7.  
Another typical application in which the SL05T1 series  
device can be utilized, is to protect multiple I/O lines. The  
protection in each of the I/O lines is achieved by connecting  
two devices in inverse–parallel. The Figure 8 illustrates how  
multiple I/O line protection is achieved:  
INPUT  
OUTPUT  
Figure 8.  
For optimizing the protection, it is recommended to use ground planes and short path lengths to minimize the PCB’s ground inductance.  
http://onsemi.com  
5
SL05T1 Series  
Transient Voltage Suppressors – Surface Mount  
300 Watts Peak Power  
SOT–23  
TO–236AB  
CASE 318–09  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
ISSUE AH  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
A
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
L
4. 318-01, -02, AND -06 OBSOLETE, NEW  
STANDARD 318-09.  
3
B
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
1
2
MIN  
2.80  
1.20  
0.99  
0.36  
1.70  
0.10  
MAX  
3.04  
1.40  
1.26  
0.50  
2.10  
0.25  
0.177  
0.60  
1.02  
2.50  
0.60  
A
B
C
D
G
H
J
0.1102 0.1197  
0.0472 0.0551  
0.0385 0.0498  
0.0140 0.0200  
0.0670 0.0826  
0.0040 0.0098  
V
G
0.0034 0.0070 0.085  
K
L
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
0.45  
0.89  
2.10  
0.45  
C
S
V
J
H
K
D
STYLE 26:  
PIN 1. CATHODE  
2. ANODE  
3. NO CONNECTION  
http://onsemi.com  
6
SL05T1 Series  
Notes  
http://onsemi.com  
7
SL05T1 Series  
Thermal Clad is a registered trademark of the Bergquist Company.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make  
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death  
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC  
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that  
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
Literature Fulfillment:  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Email: r14525@onsemi.com  
ON Semiconductor Website: http://onsemi.com  
For additional information, please contact your local  
Sales Representative.  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
SL05T1/D  

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