SL24T3 [ONSEMI]
300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections; 300瓦,采用SOT -23低电容TVS高速线路保护型号: | SL24T3 |
厂家: | ONSEMI |
描述: | 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections |
文件: | 总8页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SL05T1 Series
300 Watt, SOT-23 Low
Capacitance TVS for High
Speed Line Protections
This new family of TVS offers transient overvoltage protection with
significantly reduced capacitance. The capacitance is lowered by
integrating a compensating diode in series. This integrated solution
offers ESD protection for high speed interfaces such as communication
systems, computers, and computer peripherals.
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2
1
Specification Features:
• TVS Diode in Series with a Compensating Diode Offers <5 pF
Capacitance
3
(NC)
• ESD Protection Meeting IEC 61000–4–2, 4–4, 4–5
• Peak Power Rating of 300 Watts, 8 × 20 ms
• Bi–Direction Protection Can Be Achieved By Using Two Devices
• Flammability Rating UL 94 V–0
MARKING
DIAGRAM
3
Mechanical Characteristics:
1
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
2
xxx
SOT–23
CASE 318
STYLE 26
xxx = Device Code
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
M
= Date Code
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
ORDERING INFORMATION
Device
Package
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
SOT–23
Shipping
SL05T1
SL15T1
SL24T1
SL05T3
SL15T3
SL24T3
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
May, 2002 – Rev. 3
SL05T1/D
SL05T1 Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 8x20 usec (Note 1)
P
pk
300
W
@ T ≤ 25°C
L
IEC 61000–4–2
Contact Discharge
Air Discharge
IEC 61000–4–4
IEC 61000–4–5
Level 4
V
pp
±8
±16
40
kV
kV
Amps
Amps
EFT
Lightning
12
Total Power Dissipation on FR–5 Board (Note 2) @ T = 25°C
Derate above 25°C
°P °
D
225
1.8
°mW°
mW/°C
A
Thermal Resistance Junction to Ambient
R
556
°C/W
q
JA
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C
Derate above 25°C
°P °
D
300
2.4
°mW
mW/°C
A
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
R
417
– 55 to +150
260
°C/W
°C
q
JA
T , T
J
stg
T
°C
L
1. Non–repetitive current pulse per Figure 2
2. FR–5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
ELECTRICAL CHARACTERISTICS
I
(T = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
A
I
F
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
C
V
V
BR RWM
V
I
V
F
V
RWM
Working Peak Reverse Voltage
R
T
I
I
R
Maximum Reverse Leakage Current @ V
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
I
PP
QV
Maximum Temperature Coefficient of V
BR
BR
I
F
Forward Current
Uni–Directional TVS
V
F
Forward Voltage @ I
F
Z
Maximum Zener Impedance @ I
Reverse Current
ZT
ZT
I
ZK
Z
ZK
Maximum Zener Impedance @ I
ZK
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2
SL05T1 Series
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
V , Clamping Voltage
C
(Note 4)
(Note 5)
Capacitance
Max
V
BR
@ 1 mA (Volts)
@ 1 Amp @ 5 Amp
@ V = 0 V, 1 MHz (pF)
I
PP
V
RWM
I @ V
R RWM
R
Device
(Amps)
(Volts)
5.0
(mA)
20
Min
Max
8.0
(Volts)
9.8
(Volts)
11
Typ
3.5
3.5
3.5
Max
5.0
5.0
5.0
Marking
Device
SL05
L05
L15
L24
6.0
17
10
SL15
15
1.0
1.0
16.7
26.7
18.5
29
24
30
SL24
24
43
55
5.0
4. V measured at pulse test current of 1 mA at an ambient temperature of 25°C
BR
5. Surge current waveform per Figure 2
TYPICAL CHARACTERISTICS
10
1
100
90
80
70
60
50
40
30
20
t
r
PEAK VALUE I
@ 8 ms
RSM
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
0.1
t
P
10
0
0.01
0.1
1
10
100
1000
0
20
40
t, TIME (ms)
60
80
PULSE WIDTH (ms)
Figure 1. Maximum Peak Power Rating
Figure 2. 8 × 20 ms Pulse Waveform
4
3.5
3
10
1
SL05T1
2.5
2
SL05
SL15
SL24
1.5
1
0.1
0.5
0
0.01
@ ZERO BIAS
@ 50% V
@ V
–55
25
150
RWM
RWM
TEMPERATURE (°C)
Figure 3. Typical Junction Capacitance
Figure 4. Typical Leakage Over Temperature
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SL05T1 Series
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
determined by T
, the maximum rated junction
J(max)
temperature of the die, R , the thermal resistance from
qJA
the device junction to ambient, and the operating
temperature, T . Using the values provided on the data
A
sheet for the SOT–23 package, P can be calculated as
D
follows:
TJ(max) – TA
PD =
Rq
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
150°C – 25°C
PD =
= 225 milliwatts
556°C/W
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad . Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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4
SL05T1 Series
Applications Background
This new family of TVS devices (SL05T1 series) are
designed to protect sensitive electronics such as
communications systems, computers, and computer
peripherals against damage due to ESD conditions or
transient voltage conditions. Because of their low
capacitance value (less than 5 pF), they can be used in high
speed I/O data lines. Low capacitance is achieved by
integrating a compensating diode in series with the TVS
which is basically based in the below theoretical principle:
2
1
1
2
3
3
Figure 6.
An alternative solution to protect unidirectional lines, is to
connect a fast switching steering diode in parallel with the
SL05T1 series device. When the steering diode is
forward–biased, the TVS will avalanche and conduct in
reverse direction. It is important to note that by adding a
steering diode, the effective capacitance in the circuit will be
increased, therefore the impact of adding a steering diode
must be taken in consideration to establish whether the
incremental capacitance will affect the circuit functionality
or not. The Figure 7 shows the connection between the
steering diode and the SL05T1 series device:
• Capacitance in parallel: CT = C1+C2+....+Cn
• Capacitance in series: 1/CT = (1/C1)+(1/C2)+....+(1/Cn)
The Figure 5 shows the integrated solution of the SL05T1
series device:
COMPENSATING
DIODE
TVS
Figure 5.
In the case that an over–voltage condition occurs in the I/O
line protected by the SL05T1 series device, the TVS is
reversed–biased while the compensation diode is
forward–biased so the resulting current due to the transient
voltage is drained to ground.
SL05T1 DEVICE
If protection in both polarities is required, an additional
device is connected in inverse–parallel with reference to the
first one, the Figure 6 illustrates the inverse–parallel
connection for bi–directional or unidirectional lines:
STEERING DIODE
Figure 7.
Another typical application in which the SL05T1 series
device can be utilized, is to protect multiple I/O lines. The
protection in each of the I/O lines is achieved by connecting
two devices in inverse–parallel. The Figure 8 illustrates how
multiple I/O line protection is achieved:
INPUT
OUTPUT
Figure 8.
For optimizing the protection, it is recommended to use ground planes and short path lengths to minimize the PCB’s ground inductance.
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5
SL05T1 Series
Transient Voltage Suppressors – Surface Mount
300 Watts Peak Power
SOT–23
TO–236AB
CASE 318–09
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
ISSUE AH
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
A
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
4. 318-01, -02, AND -06 OBSOLETE, NEW
STANDARD 318-09.
3
B
S
INCHES
DIM MIN MAX
MILLIMETERS
1
2
MIN
2.80
1.20
0.99
0.36
1.70
0.10
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
A
B
C
D
G
H
J
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
V
G
0.0034 0.0070 0.085
K
L
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
0.45
0.89
2.10
0.45
C
S
V
J
H
K
D
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
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6
SL05T1 Series
Notes
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7
SL05T1 Series
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
SL05T1/D
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