SM12AT1G [ONSEMI]

450W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, SOT-23, 3 PIN;


型号：	SM12AT1G
厂家：	ONSEMI
描述：	450W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, SOT-23, 3 PIN 光电二极管电视
文件：	总5页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SM12AT1

Product Preview

Transient Voltage

Suppressor Diode Array

SOT−23 Dual Common Anode Zeners

for ESD Protection

http://onsemi.com

These dual monolithic silicon zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their dual junction common

anode design protects two separate lines using only one package. These

devices are ideal for situations where board space is at a premium.

PIN 1. CATHODE

2. CATHODE

3. ANODE

Features

• SOT−23 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

• Working Peak Reverse Voltage Range − 12 V

• Peak Power − 450 W (8 X 20 ms)

• Low Leakage

SOT−23

CASE 318

STYLE 12

• Flammability Rating UL 94 V−0

• ESD Rating:

IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)

IEC 61000−4−4 (EFT) 50 A (5 x 50 ns)

IEC 61000−4−5 (Lighting) 12 A (8 x 20 ms)

• Human Body Model − Up to 16 kV

MARKING DIAGRAM

• Machine Model − Up to 400 V

• Pb−Free Package is Available

12N M G

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

Package designed for optimal automated board assembly

Small package size for high density applications

12N = Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

SM12AT1

SM12AT1G

SOT−23

3000/Tape & Reel

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

April, 2006 − Rev. P2

SM12AT1/D

SM12AT1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Power Dissipation @ 20 ms @ T ≤ 25°C (Note 1)

450

IEC 61000−4−2 (ESD)

Air

Contact

8.0

IEC 61000−4−4 (EFT)

IEC 61000−4−5 (Lightning)

Total Power Dissipation on FR−5 Board (Note 2) @ T = 25°C

°P °

225

1.8

556

°mW°

mW/°C

°C/W

Derate above 25°C

Thermal Resistance Junction−to−Ambient

Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C

°P °

300

2.4

417

°mW

mW/°C

°C/W

Derate above 25°C

Thermal Resistance Junction−to−Ambient

Junction and Storage Temperature Range

T , T

− 55 to +150

260

°C

stg

Lead Solder Temperature − Maximum (10 Second Duration)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Non−repetitive current pulse per Figure 3

2. FR−5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

*Other voltages may be available upon request

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

BR RWM

Working Peak Reverse Voltage

RWM

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Maximum Temperature Coefficient of V

Forward Current

Uni−Directional TVS

Forward Voltage @ I

Maximum Zener Impedance @ I

Reverse Current

Maximum Zener Impedance @ I

ELECTRICAL CHARACTERISTICS

Typical

Capacitance

= 1 A

, Breakdown Voltage

(Volts)

Max I

(pF)

(Note 4)

RWM

I @ V

R RWM

Pin 1 to 3

@ 0 V

Device

Marking

(Volts)

(mA)

Min

13.3

Max

(Volts)

(Amps)

Device

SM12AT1

12N

1.0

15.75

1.0

120

4. 8 × 20 ms pulse waveform per Figure 3

http://onsemi.com

SM12AT1

TYPICAL CHARACTERISTICS

300

250

200

150

100

ALUMINA SUBSTRATE

0.1

FR−5 BOARD

0.01

0.1

100

1000

100

125

150

175

t , PULSE DURATION (ms)

TEMPERATURE (°C)

Figure 1. Non−Repetitive Peak Pulse Power

versus Pulse Time

Figure 2. Steady State Power Derating Curve

100

PEAK VALUE I

@ 8 ms

RSM

PULSE WIDTH (t ) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

HALF VALUE I

/2 @ 20 ms

RSM

t, TIME (ms)

Figure 3. 8 × 20 ms Pulse Waveform

http://onsemi.com

SM12AT1

TYPICAL COMMON ANODE APPLICATIONS

A quad junction common anode design in a SOT−23

package protects four separate lines using only one package.

This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples

of TVS applications are illustrated below.

Computer Interface Protection

KEYBOARD

FUNCTIONAL

DECODER

TERMINAL

I/O

PRINTER

ETC.

GND

SM12AT1

Microprocessor Protection

ADDRESS BUS

RAM

ROM

DATA BUS

CPU

SM12AT1

I/O

CLOCK

CONTROL BUS

GND

SM12AT1

http://onsemi.com

SM12AT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEE VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

MILLIMETERS

INCHES

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

2.10

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

2.40

MAX

MIN

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

0.094

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.104

0.25

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

2.64

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

0.083

VIEW C

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

inches

SCALE 10:1

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

SM12AT1/D

http://onsemi.com

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