SMBJ7V0A [ONSEMI]

600 Watt Transient Voltage Suppressors, 3000-REEL;


型号：	SMBJ7V0A
厂家：	ONSEMI
描述：	600 Watt Transient Voltage Suppressors, 3000-REEL 局域网光电二极管
文件：	总7页 (文件大小：282K)
中文：	中文翻译
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

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device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

November 2014

SMBJ5V0(C)A - SMBJ170(C)A

600 Watt Transient Voltage Suppressors

Features

• Glass-Passivated Junction

• 600 W Peak Pulse Power Capability

on 10/1000 μs Waveform.

• Excellent Clamping Capability

• Low-Incremental Surge Resistance

• Fast Response Time: Typically Less than 1.0 ps from 0 V

to BV minimum for Unidirectional and 5.0 ns for Bidirectional

• Typical I_RLess than 1.0 μA Above 10 V

SMB/DO-214AA

Band denotes cathode on unidirectional devices only.

No band on bi-directional devices. Bi-directional types

have CA suffix where electrical characteristics apply in

both directions suitable for bi-directional applications.

• UL Certificate #E258596

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T_A= 25°C unless otherwise noted.

Symbol

P_PPM

Parameter

Value

600

Unit

Peak Pulse Power Dissipation on 10/1000 μs Waveform

Peak Pulse Current on 10/1000 μs Waveform

I_PPM

See Table

Non-Repetitive Peak Forward Surge Current

I_FSM

100

Superimposed on Rated Load (JEDEC Method)⁽¹⁾

T_STG

T_J

Storage Temperature Range

-55 to 150

°C

Operating Junction Temperature Range

Note:

1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum.

SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1

www.fairchildsemi.com

Electrical Characteristics

Values are at T_A= 25°C unless otherwise noted.

Breakdown

Voltage

V_BR(V)

Reverse

Stand-Off

Voltage

Clamping

Voltage

at I_PPM

Reverse

Leakage

at V_RWM

I_R(μA)⁽³⁾

Uni-Directional

Bi-Directional (C)

Device

Test

Current

I_T(mA)

Peak Pulse

Current

I_PPM(A)

Part

Marking⁽²⁾

V_RWM(V)

V_C(V)

Min. Max.

SMBJ5V0(C)A

SMBJ6V0(C)A

SMBJ6V5(C)A

SMBJ7V0(C)A

SMBJ7V5(C)A

SMBJ8V0(C)A

SMBJ8V5(C)A

SMBJ9V0(C)A

SMBJ10(C)A

SMBJ11(C)A

SMBJ12(C)A

SMBJ13(C)A

SMBJ14(C)A

SMBJ15(C)A

SMBJ16(C)A

SMBJ17(C)A

SMBJ18(C)A

SMBJ20(C)A

SMBJ22(C)A

SMBJ24(C)A

SMBJ26(C)A

SMBJ28(C)A

SMBJ30(C)A

SMBJ33(C)A

SMBJ36(C)A

SMBJ40(C)A

SMBJ43(C)A

SMBJ45(C)A

SMBJ48(C)A

SMBJ51(C)A

SMBJ54(C)A

SMBJ58(C)A

SMBJ60(C)A

SMBJ64(C)A

SMBJ70(C)A

SMBJ75(C)A

SMBJ78(C)A

5.0

6.0

6.5

7.0

7.5

8.0

8.5

9.0

6.40

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

36.7

40.0

44.4

47.8

50.0

53.3

56.7

60.0

64.4

66.7

71.1

77.8

83.3

86.7

7.00

7.37

7.98

8.60

9.21

9.83

10.4

11.1

12.8

13.5

14.7

15.9

17.2

18.5

19.7

20.9

22.1

24.5

26.9

29.5

31.9

34.4

36.8

40.6

44.2

49.1

52.8

55.3

58.9

62.7

66.3

71.2

73.7

78.6

86.0

92.1

95.8

9.2

10.3

11.2

12.0

12.9

13.6

14.4

15.4

17.0

18.2

19.9

21.5

23.2

24.4

26.0

27.6

29.2

32.4

35.5

38.9

42.1

45.4

48.4

53.3

58.1

64.5

69.4

72.7

77.4

82.4

87.1

93.6

96.8

103.0

113.0

121.0

126.0

65.2

58.3

53.6

50.0

46.5

44.1

41.7

39.0

35.3

33.0

30.2

27.9

25.9

24.6

23.1

21.7

20.5

18.5

16.9

15.4

14.3

13.2

12.4

11.3

10.3

9.3

800

500

200

100

8.6

8.3

7.8

7.3

6.9

6.4

6.2

5.8

5.3

5.0

4.8

Notes:

2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.

3. For bidirectional parts with V_RWM< 10 V, the I_Rmax limit is doubled.

www.fairchildsemi.com

SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1

Electrical Characteristics (Continued)

Values are at T_A= 25°C unless otherwise noted.

Breakdown

Voltage

V_BR(V)

Reverse

Stand-Off

Voltage

Clamping

Voltage

at I_PPM

Reverse

Leakage

at V_RWM

I_R(μA)⁽³⁾

Uni-Directional

Bi-Directional (C)

Device

Test

Current

I_T(mA)

Peak Pulse

Current

I_PPM(A)

Part

Marking⁽²⁾

V_RWM(V)

V_C(V)

Min.

Max.

SMBJ85(C)A

SMBJ90(C)A

SMBJ100(C)A

SMBJ110(C)A

SMBJ120(C)A

SMBJ130(C)A

SMBJ150(C)A

SMBJ160(C)A

SMBJ170(C)A

94.4

104.0

137.0

146.0

162.0

177.0

193.0

209.0

243.0

259.0

275.0

4.4

4.1

3.7

3.4

3.1

2.9

2.5

2.3

2.2

100.0 111.0

111.0 123.0

122.0 135.0

133.0 147.0

144.0 159.0

167.0 185.0

178.0 197.0

189.0 209.0

100

110

120

130

150

160

170

Notes:

2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.

3. For bidirectional parts with V_RWM< 10 V, the I_Rmax limit is doubled.

www.fairchildsemi.com

SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1

Typical Performance Characteristics

100

= 25ºC

0.1

100 125 150 175 200

0.0001

0.001

0.01

0.1

AMBIENT TEMPERATURE ( C)

PULSE WIDTH (ms)

Figure 2. Pulse Derating Curve

Figure 1. Peak Pulse Power Rating Curve

150

6000

4000

= 25 C

Pulse Width (td) is Defined

as the Point Where the Peak

Current Decays to 50% of Ipp

f = 1.0 MHz

tf = 10μsec

Visg = 50m Vp-p

2000

1000

500

Measured at

Zero Bias

Peak Value

Ippm

100

Half Value-Ipp

Measured at

Stand-Off

200

100

Voltage (V^RWM)

10/1000μsec Waveform

as Defined by R.E.A.

e-kt

100 200

TIME (ms)

REVERSE VOLTAGE (V)

Figure 3. Pulse Waveform

Figure 4. Junction Capacitance

200

100

= T max

8.3ms Single Half Sine-Wave

JEDEC Method

100

NUMBER OF CYCLES AT 60Hz

Figure 5. Non-Repetitive Surge Current

SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1

www.fairchildsemi.com

THIS DRAWING IS THE PROPERTY OF FAIRCHILD SEMICONDUCTOR CORPORATION. NO USE

THEREOF SHALL BE MADE OTHER THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTED

TO FAIRCHILD SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFORMITY

REVISIONS

WITH SUCH PROPOSALS UNLESS THE CONSENT OF SAID FAIRCHILD SEMICONDUCTOR COR-

PORATION HAS PREVIOUSLY BEEN OBTAINED. NO PART OF THIS DRAWING SHALL BE

DESCRIPTION

DATE

BY/APP'D

NBR

COPIED OR DUPLICATED OR ITS CONTENTS DISCLOSED. THE INFORMATION CONTAINED

ON THIS DRAWING IS CONFIDENTIAL AND PROPRIETARY.

RELEASED TO DCC

SDLEE / FSSZ

19MAY2008

5.60

5.08

0.13

C B A

2.50

3.95

3.30

2.20

1.91

2.20

4.70

4.75

4.05

LAND PATTERN RECOMMENDATION

8°

0°

2.65 MAX

R0.15 4X

GAUGE

PLANE

2.45

1.90

0.45

0.41

0.15

0.30

0.05

0.203

0.050

0 -8°

2.15

1.65

1.60

0.75

0.13

C B A

DETAIL A

SCALE 20 : 1

NOTES:

A. EXCEPT WHERE NOTED CONFORMS TO

JEDEC DO214 VARIATION AA.

DOES NOT COMPLY JEDEC STD. VALUE.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-1994.

F. LAND PATTERN STD. DIOM5336X240M.

G. DRAWING FILE NAME: DO214AAREV1

APPROVALS

BOBOY MALDO

DATE

19MAY2008

DRAWN:

CHECKED:

SD LEE

APPROVED:

FRED REN

2LD, SMB, JEDEC

APPROVED:

DO214 VARIATION AA

HOWARD ALLEN

SCALE

DRAWING NUMBER

REV

SIZE

PROJECTION

1:1

FORMERLY:

MKT-DO214AA

N/A

1 OF 1

[MM]

INCH

SHEET :

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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SMBJ7V0A [ONSEMI]

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